Optical properties of quaternary a-Ge15-x Sbx Se50 Te35 thermally evaporated thin-films: refractive index dispersion and single oscillator parameters

Optik ◽  
2020 ◽  
Vol 200 ◽  
pp. 163415 ◽  
Author(s):  
Ahmed Saeed Hassanien ◽  
Ishu Sharma
2021 ◽  
pp. 2150189
Author(s):  
A. Kashuba ◽  
H. Ilchuk ◽  
R. Petrus ◽  
I. Semkiv ◽  
O. Bovgyra ◽  
...  

The optical constants and thickness of Al-doped ZnO (ZnO:Al(2.5 wt.%)) thin films prepared by high-frequency magnetron sputtering method are determined. ZnO:Al thin films are crystallized in the hexagonal structure from XRD studies. The optical constants and the bandgap of the films under study have been determined. Optical properties (refractive index [Formula: see text], absorption coefficient [Formula: see text], extinction coefficient [Formula: see text], dielectric functions [Formula: see text] and optical conductivity [Formula: see text]) of thin films and thickness [Formula: see text] can be determined from the transmission spectrum. The dispersion of the refractive index was explained using a single oscillator model. Single oscillator energy and dispersion energy are obtained from fitting. Optical parameters of the films were determined using the Cauchy, Sellmeier and Wemple models. The increasing value of dispersion parameter for polycrystalline thin films than for single crystals is observed. The fundamental absorption edge position (3.26 eV) in the transmittance spectrum of studied thin films corresponds to the values that are typical for ZnO:Al compound. No significant increase of the bandgap width was revealed by comparing ZnO:Al thin films with the known results of the optical studies of ZnO thin films. Possible reasons of such behavior were analyzed and the influence of bandgap increase on spectral behavior of optical functions are investigated. The material optical parameters such as normalized integrated transmission, zero and high-frequency dielectric constant, density of state effective mass ratio were also calculated.


2019 ◽  
Vol 20 (4) ◽  
pp. 367-371 ◽  
Author(s):  
R.Yu. Petrus ◽  
H.A. Ilchuk ◽  
A.I. Kashuba ◽  
I.V. Semkiv ◽  
E.O. Zmiiovska ◽  
...  

The optical constants and thickness of cadmium chalcogenides (CdX, X= S, Se and Te) thin films prepared by quasi close-space sublimation and high-frequency magnetron sputtering method are determined. The optical constants and the band gap of the films under study have been determined. Optical properties (refractive index n(λ), extinction coefficient k(λ) and dielectric functions ε(λ)) of thin films and thickness d can be determined from the transmission spectrum. The dispersion of the refractive index was explained using a single oscillator model. Single oscillator energy and dispersion energy are obtained from fitting. The material optical parameter such as normalized integrated transmission, zero and high-frequency dielectric constant, density of state effective mass ratio was also calculated.


2018 ◽  
Vol 26 (10) ◽  
pp. 249-256
Author(s):  
Waleed Khalid Kadhim

In this paper I present the preparation of (Sb2o3) thin films using thermal evaporation in vacuum, procedure with different thickness  (100 ,150 ,200 ,and 250) nm, by using ( hot plate) from Molybdenum matter at temperature in ( 9000c) and the period of time (15mint) ,the prepared in a manner thermal evaporation in a vacuum and precipitated on glass bases, pure Antimony Trioxide (sb2o3 ) thin films with various condition have been successfully deposited by (T.E.V) on glass slide substrates. The substrates temperature of about 100oC and the vacuum of about 10-6 torr, to investigated oxidation of evaporated, measure spectra for prepared films in arrange of wavelength (250 – 1100 nm). The following optical properties have been calculated: the absorption coefficient, the forbidden (Eg) for direct and indirect transitions "absorbance, refractive index,  extinction coefficient, real and imaginary parts" of the dielectric constant.


Author(s):  
J. Damisa ◽  
J. O. Emegha ◽  
I. L. Ikhioya

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.


2011 ◽  
Vol 8 (2) ◽  
pp. 561-565
Author(s):  
Baghdad Science Journal

Cr2O3 thin films have been prepared by spray pyrolysis on a glass substrate. Absorbance and transmittance spectra were recorded in the wavelength range (300-900) nm before and after annealing. The effects of annealing temperature on absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant and optical conductivity were expected. It was found that all these parameters increase as the annealing temperature increased to 550°C.


2012 ◽  
Vol 488-489 ◽  
pp. 103-108 ◽  
Author(s):  
Manisha Tyagi ◽  
Monika Tomar ◽  
Vinay Gupta

The influence of substrate temperature on the UV-Visible-near-IR optical properties, namely the band gap, the Urbach energy and the refractive index of NiO thin films deposited by RF sputtering has been investigated. The optical band gap of thin films showed the blue-shift in the transmission spectra with increase in the substrate temperature which is related to variation in carrier concentration of the deposited films. Urbach energy (EU) values indicate that the films deposited at 400 oC substrate temperature show least structural disorder. The refractive index of the films is found to decrease continuously with increase in the substrate temperature at all photon energies in the visible and near-IR region, and is attributed to the decreasing packing density of the films. Introduction


Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Milen Nenkov ◽  
Tamara Pencheva

AbstractA new approach for determination of refractive index dispersion n(λ) (the real part of the complex refractive index) and thickness d of thin films of negligible absorption and weak dispersion is proposed. The calculation procedure is based on determination of the phase thickness of the film in the spectral region of measured transmittance data. All points of measured spectra are included in the calculations. Barium titanate thin films are investigated in the spectral region 0.38–0.78 μm and their n(λ) and d are calculated. The approach is validated using Swanepoel’s method and it is found to be applicable for relatively thin films when measured transmittance spectra have one minimum and one maximum only.


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