Biaxial strain effects on the band structure and absorption coefficient of GaAs1-x-yNxBiy/GaAs MQWs calculated using k.p method

Optik ◽  
2020 ◽  
Vol 223 ◽  
pp. 165484
Author(s):  
N. Ajnef ◽  
W.Q. Jemmali ◽  
M.M. Habchi ◽  
A. Rebey
Keyword(s):  
Band Structure ◽  
Absorption Coefficient ◽  
Biaxial Strain ◽  
Strain Effects ◽  
K.P Method

scholarly journals Atomic-layered MoS2 on SiO2 under high pressure: Bimodal adhesion and biaxial strain effects

2017 ◽  
Vol 1 (2) ◽  
Author(s):  
R. S. Alencar ◽  
K. D. A. Saboia ◽  
D. Machon ◽  
G. Montagnac ◽  
V. Meunier ◽  
...  
Keyword(s):  
High Pressure ◽  
Biaxial Strain ◽  
Strain Effects ◽  
Layered Mos2

Quantitative Assessment of the Effects of Strain on Future III-V Digital Applications

2012 ◽  
Vol 9 (1) ◽  
pp. 37-42
Author(s):  
Umesh P. Gomes ◽  
Kumud Ranjan ◽  
Subhra Chowdhury ◽  
Palash Das ◽  
Servin Rathi ◽  
...  
Keyword(s):  
Band Structure ◽  
Leakage Current ◽  
Quantitative Assessment ◽  
Compressive Strain ◽  
Design Parameters ◽  
Subthreshold Slope ◽  
Gate Leakage Current ◽  
Active Device ◽  
Strain Effects ◽  
Induced Changes

In this paper the strain effects on the performance and reliability of future digital III-V device are discussed. Strain is incorporated in the device during fabrication, packaging, and operation. A high amount of strain can introduce defects and cracks in the epilayer. The band structure of the active device region is also altered due to strain. These strain induced changes determine performance, reliability, and lifetime of the device. Therefore, it is necessary to consider strain effects while designing a device for a particular application. Here, compressive-strain-induced changes are used as design parameters and their impact on the logic performance of the device is studied. It is interpreted that the design significantly decreases the gate leakage current and improves the subthreshold slope.

Computational Analysis of Strain Effects on Electrical Transport Properties of Crystalline Nanocomposite Thin Films

2011 ◽  
Author(s):  
Hua Li ◽  
Gang Li
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electronic Band Structure ◽  
Electrical Transport Properties ◽  
Electronic Band ◽  
Strain Effects ◽  
Nanocomposite Thin Films

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.

Optical Absorption In Hg1−xCdxTe

1997 ◽  
Vol 484 ◽  
Author(s):  
Vaidya Nathan
Keyword(s):  
Experimental Data ◽  
Optical Absorption ◽  
Band Structure ◽  
Absorption Coefficient ◽  
Numerical Results ◽  
Recent Experimental Data ◽  
Narrow Gap ◽  
Interband Transitions ◽  
Linear Absorption Coefficient ◽  
Linear Absorption

AbstractThe theory of optical absorption due to interband transitions in direct-gap semiconductors is revisited. A new analytical expression for linear absorption coefficient in narrow-gap semiconductors is obtained by including the nonparabolic band structure due to Keldysh and Burstein-Moss shift. Numerical results are obtained for Hg1−xCdxTe for several values of x and temperature, and compared with recent experimental data. The agreement is found to be good.

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