Investigation of the C-V characteristics that provides linearity in a large reverse bias region and the effects of series resistance, surface states and interlayer in Au/n-Si/Ag diodes

2017 ◽  
Vol 708 ◽  
pp. 464-469 ◽  
Author(s):  
Çiğdem Bilkan ◽  
Şemsettin Altındal
Keyword(s):  
Reverse Bias ◽  
Series Resistance ◽  
Surface States ◽  
Resistance Surface

On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

2008 ◽  
Vol 85 (1) ◽  
pp. 81-88 ◽  
Author(s):  
F. Parlaktürk ◽  
Ş. Altındal ◽  
A. Tataroğlu ◽  
M. Parlak ◽  
A. Agasiev
Keyword(s):  
Series Resistance ◽  
Surface States ◽  
Frequency Dependent ◽  
Dependent Series

On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage

2017 ◽  
Vol 46 (10) ◽  
pp. 5728-5736 ◽  
Author(s):  
Afsoun Nikravan ◽  
Yosef Badali ◽  
Şemsettin Altındal ◽  
İbrahim Uslu ◽  
İkram Orak
Keyword(s):  
Series Resistance ◽  
Surface States ◽  
Wide Range ◽  
Voltage Dependent

Phthalocyanines: electrolyte Schottky-junction devices

1983 ◽  
Vol 61 (1) ◽  
pp. 72-77 ◽  
Author(s):  
R. O. Loutfy ◽  
L. F. McIntyre
Keyword(s):  
Counter Electrode ◽  
Fill Factor ◽  
Series Resistance ◽  
Power Conversion ◽  
Surface Recombination ◽  
Back Contact ◽  
Resistance Surface ◽  
Redox Couples ◽  
Low Efficiency ◽  
High Series

The photoelectrochemical properties of phthalocyanine coated tin-oxide (SnO2) electrodes in the presence of several redox couples were investigated. The photovoltaic performances were optimized for Fe(CN)64−/3− and I2/I3− redox couples with respect to concentration, pH, counter electrode, and back contact. Under AM2 solar illumination the SnO2/x-H2Pc Fe(CN)64−/3− cells developed a photocurrent of 0.63 mA/cm2, photovoltage of 0.33 volts, fill factor of 0.25, and a power conversion efficiency of 0.07% to white light irradiation of 75 mW/cm2. The low efficiency of carrier collection was attributed to the high series resistance, surface recombination of carriers, and slow charge exchange at the counter electrode.

On the anomalous peak in the forward bias capacitance and conduction mechanism in the Au/n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140–400 K

2015 ◽  
Vol 29 (04) ◽  
pp. 1550010 ◽  
Author(s):  
Ahmet Kaya
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Surface States ◽  
Negative Temperature ◽  
Anomalous Peak ◽  
Increasing Temperature ◽  
Straight Lines ◽  
Accumulation Region ◽  
Good Agreement

The temperature and voltage dependence profile of the surface states (Nss), series resistance (Rs) and electrical conductivity (σ ac ) have been investigated in temperature and voltage ranges of 140–400 K and (-5 V )-(6 V ), respectively. The value of barrier height (BH) decreases with increasing temperature as ΦB(T) = (1.02 - 4×10-4⋅ T ) eV. These values of negative temperature coefficient (-4×10-4 eV ⋅ K -1) is in good agreement with the α of band gap of SiC (-3.1×10-4 eV ⋅ K -1). Capacitance-voltage (C–V) plots for all temperatures show an anomalous peak in the accumulation region because of the effect of series resistance (Rs) and Nss. The effect of Rs and Nss on the C and conductance (G) are found noticeable high especially at low temperatures. The decrease in C values also corresponds to an increase in G/ω values in the accumulation region. In addition, Ln (σ ac ) versus q/kT plots have two straight lines with different slopes which are corresponding to below and above room temperatures for various forward biases which are an evident two valid possible conduction mechanisms. The values of activation energy (Ea) were obtained from the slope of these plots and they changed from 6.3 meV to 4.7 meV below room temperatures and 42.5 meV to 34.4 meV for above room temperatures, respectively.

DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS

2007 ◽  
Vol 14 (04) ◽  
pp. 765-768 ◽  
Author(s):  
A. SELLAI ◽  
M. MAMOR ◽  
S. AL-HARTHI
Keyword(s):  
Energy Distribution ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Surface States ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diodes ◽  
Capacitance Measurements

Pd / Si 0.9 Ge 0.1/ Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C–V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

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