Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage

In order to compare the main electrical parameters such as ideality factor [Formula: see text], barrier height (BH) [Formula: see text], series [Formula: see text] and shunt [Formula: see text] resistances and energy density distribution profile of surface states [Formula: see text], the [Formula: see text]-[Formula: see text] (MS) Schotthy diodes (SDs), with and without interfacial [Formula: see text] layer were obtained from the current–voltage [Formula: see text]–[Formula: see text] measurements at room temperature. The other few electrical parameters such as Fermi energy level [Formula: see text], BH [Formula: see text]), [Formula: see text] and voltage dependence of [Formula: see text] profile were also obtained from the capacitance–voltage [Formula: see text]–[Formula: see text] measurements. The voltage dependence of [Formula: see text] profile has two distinctive peaks in the depletion region for two diodes and they were attributed to a particular distribution of [Formula: see text] located at metal–semiconductor (MS) interface. All of these results have been investigated at room temperature and results have been compared with each other. Experimental results confirmed that interfacial [Formula: see text] layer enhanced diode performance in terms of rectifier rate [Formula: see text] at [Formula: see text], [Formula: see text] [Formula: see text]at [Formula: see text] and [Formula: see text] [Formula: see text] with values of 265, [Formula: see text] and [Formula: see text] for MS type Schottky barrier diode and [Formula: see text], [Formula: see text] and [Formula: see text] for metal–insulator–semiconductor (MIS) type SBD, respectively. It is clear that the rectifying ratio of MIS type SBD is about 9660 times greater than MS type SBD. The value of barrier height (BH) obtained from [Formula: see text]–[Formula: see text] data is higher than the forward bias [Formula: see text]–[Formula: see text] data and it was attributed to the nature of measurements. These results confirmed that the interfacial [Formula: see text] layer has considerably improved the performance of SD.

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On the Examination of Temperature-Dependent Possible Current-Conduction Mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky Barrier Diodes in Wide Range of Voltage

10.21203/rs.3.rs-194859/v1 ◽

2021 ◽

Author(s):

Ömer SEVGİLİ

Keyword(s):

Barrier Height ◽

Linear Part ◽

Forward Bias ◽

Surface States ◽

Image Force ◽

Positive Temperature ◽

Zero Bias ◽

Conduction Mechanisms ◽

Wide Range ◽

Current Conduction

Abstract Au/(nanocarbon-PVP)/n-Si SDs were fabricated and their current-conduction mechanisms (CCMs) have been examined in elaborative by utilizing current-voltage (I-V) characteristics in temperature range of 60-340K at (± 3V) ranges. The values of ideality factor (n) and zero-bias barrier height (ΦBo) determined from the linear-part of semilogarithmic forward bias IF-VF properties based on Thermionic-Emission (TE) theory revealed that decrease in ΦBo and increase in n with deccreasing temperature. Additionally, Richardson constant (A*) value was found several orders lower than its theoretical value. The values of ΦBo and n changed from 0.173 eV to 0.837 eV and 6.60 to 2.85 with increasing temperature from 60 K to 340 K. This positive temperature-coefficient (α) of ΦBo is inagreement with the bandgap of semiconductor or barrier height (BH) for the ideal diode. The calculated higher value of n at low temperatures was attributed to the inhomogeneities of BH rather than the interlayer, surface-states (Nss), and image-force lowering. With lowing temperatures, CCMs may be governed by tunneling over the lower barriers, via Nss, and generation recombination (GR), as well as TE and hence a complete description of CCM and understanding of the formation BH, remain a compelling problem. Nss-(Ec-Ess) profile was also obtained from IF-VF data for each temperature.

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Magnetic Quantum Oscillations from Surface States of Bi Nanowires

MRS Proceedings ◽

10.1557/opl.2011.1051 ◽

2011 ◽

Vol 1350 ◽

Author(s):

L. A. Konopko ◽

T. E. Huber ◽

A. A. Nikolaeva

Keyword(s):

Single Crystal ◽

Low Temperatures ◽

Surface States ◽

Charge Carriers ◽

Quantum Oscillations ◽

Wide Range ◽

Spin Orbit Interactions ◽

Conducting Tube ◽

Magnetic Quantum Oscillations ◽

Strong Spin

ABSTRACTIn this work, we report the results of studies of the transverse magnetoresistance (MR) of single-crystal Bi nanowires with diameter d<80 nm. The single-crystal nanowire samples were prepared by the Taylor-Ulitovsky technique. Due to the semimetal-to-semiconductor transformation and high density of surface states with strong spin-orbit interactions, the charge carriers are confined to the conducting tube made of surface states. The non monotonic changes of transverse MR that are equidistant in a direct magnetic field were observed at low temperatures in a wide range of magnetic fields up to 14 T. The period of oscillations depends on the wire diameter d as for the case of longitudinal MR. An interpretation of transverse MR oscillations is presented.

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The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions

MRS Proceedings ◽

10.1557/proc-1026-c04-02 ◽

2007 ◽

Vol 1026 ◽

Author(s):

Augustus K. W. Chee ◽

Conny Rodenburg ◽

Colin John Humphreys

Keyword(s):

Oxide Layer ◽

Computer Modelling ◽

Surface States ◽

Native Oxide ◽

Native Oxide Layer ◽

Element Analysis ◽

Surface Band ◽

Band Bending ◽

Wide Range ◽

Se Doping

AbstractDetailed computer modelling using finite-element analysis was performed for Si p-n junctions to investigate the effects of surface states and doping concentrations on surface band-bending, surface junction potentials and external patch fields. The density of surface states was determined for our Si specimens with a native oxide layer. Our calculations show that for a typical density of surface states for a Si specimen with a native oxide layer, the effects of external patch fields are negligible and the SE doping contrast is due to the built-in voltage across the p-n junction modified by surface band-bending. There is a good agreement between the experimental doping contrast and the calculated junction potential just below the surface, taking into account surface states, for a wide range of doping concentrations.

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The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

Физика и техника полупроводников ◽

10.21883/ftp.2017.12.45193.8646 ◽

2017 ◽

Vol 51 (12) ◽

pp. 1721

Author(s):

Sabuhi Ganiyev ◽

M. Azim Khairi ◽

D. Ahmad Fauzi ◽

Yusof Abdullah ◽

N.F. Hasbullah

Keyword(s):

Barrier Height ◽

Ideality Factor ◽

Elevated Temperatures ◽

Series Resistance ◽

Schottky Diodes ◽

High Energy ◽

Bias Current ◽

N Saturation ◽

Saturation Current ◽

Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

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The Barrier Height of Point-Contact Germanium Diodes inferred from Measurements of the Voltage Dependence of Capacitance

Proceedings of the Physical Society Section B ◽

10.1088/0370-1301/68/2/408 ◽

1955 ◽

Vol 68 (2) ◽

pp. 113-115 ◽

Cited By ~ 2

Author(s):

F F Roberts ◽

J R Tillman

Keyword(s):

Barrier Height ◽

Voltage Dependence ◽

Point Contact

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Topological phase and thermoelectric properties of bialkali bismuthide compounds (Na,K)2RbBi from first-principles

Journal of Physics Condensed Matter ◽

10.1088/1361-648x/ac431d ◽

2021 ◽

Author(s):

Shahram Yalameha ◽

Zahra Nourbakhsh ◽

Daryoosh Vashaee

Keyword(s):

Density Functional ◽

Transport Coefficients ◽

Relaxation Times ◽

Surface States ◽

Topological Phase ◽

Boltzmann Transport ◽

Thermoelectric Power Factor ◽

Practical Applications ◽

Wide Range ◽

P Type

Abstract We report the topological phase, thermal, and electrical properties of bialkali bismuthide compounds (Na,K)2RbBi, as yet hypothetical. The topological phase transitions of these compounds under hydrostatic pressure are investigated. The calculated topological surface states and Z2 topological index confirm the nontrivial topological phase. The electronic properties and transport coefficients are obtained using the density functional theory combined with the Boltzmann transport equation. The relaxation times are determined using the deformation potential theory to calculate the electronic thermal and electrical conductivity. The calculated mode Grüneisen parameters are substantial, indicating strong anharmonic acoustic phonons scattering, which results in an exceptionally low lattice thermal conductivity. These compounds also have a favorable thermoelectric power factor leading to a relatively flat p-type figure-of-merit over a broad temperature range. Furthermore, the mechanical properties and phonon band dispersions show that these structures are mechanically and dynamically stable. Therefore, they offer excellent candidates for practical applications over a wide range of temperatures.

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