Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current–voltage and admittance–voltage characteristics

Vacuum ◽  
2009 ◽  
Vol 84 (3) ◽  
pp. 363-368 ◽  
Author(s):  
Ş. Altındal ◽  
İ. Yücedağ ◽  
A. Tataroğlu
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Surface States ◽  
Insulator Layer ◽  
Current Voltage

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

2014 ◽  
Vol 13 (01) ◽  
pp. 1450003 ◽  
Author(s):  
ALEXEY V. KLYUEV ◽  
EVGENY I. SHMELEV ◽  
ARKADY V. YAKIMOV
Keyword(s):  
Experimental Data ◽  
Schottky Diode ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Voltage Characteristic ◽  
Schottky Junction ◽  
Current Voltage Characteristic ◽  
Impurity Atoms ◽  
Current Voltage

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current–voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs – model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1–10 special impurity atoms with stochastically modulated ionization energy.

On the anomalous peak in the forward bias capacitance and conduction mechanism in the Au/n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140–400 K

2015 ◽  
Vol 29 (04) ◽  
pp. 1550010 ◽  
Author(s):  
Ahmet Kaya
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Surface States ◽  
Negative Temperature ◽  
Anomalous Peak ◽  
Increasing Temperature ◽  
Straight Lines ◽  
Accumulation Region ◽  
Good Agreement

The temperature and voltage dependence profile of the surface states (Nss), series resistance (Rs) and electrical conductivity (σ ac ) have been investigated in temperature and voltage ranges of 140–400 K and (-5 V )-(6 V ), respectively. The value of barrier height (BH) decreases with increasing temperature as ΦB(T) = (1.02 - 4×10-4⋅ T ) eV. These values of negative temperature coefficient (-4×10-4 eV ⋅ K -1) is in good agreement with the α of band gap of SiC (-3.1×10-4 eV ⋅ K -1). Capacitance-voltage (C–V) plots for all temperatures show an anomalous peak in the accumulation region because of the effect of series resistance (Rs) and Nss. The effect of Rs and Nss on the C and conductance (G) are found noticeable high especially at low temperatures. The decrease in C values also corresponds to an increase in G/ω values in the accumulation region. In addition, Ln (σ ac ) versus q/kT plots have two straight lines with different slopes which are corresponding to below and above room temperatures for various forward biases which are an evident two valid possible conduction mechanisms. The values of activation energy (Ea) were obtained from the slope of these plots and they changed from 6.3 meV to 4.7 meV below room temperatures and 42.5 meV to 34.4 meV for above room temperatures, respectively.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

The Cryogenic Testing and Characterisation of SiC Diodes

2014 ◽  
Vol 778-780 ◽  
pp. 863-866 ◽  
Author(s):  
Peter M. Gammon ◽  
Craig A. Fisher ◽  
Vishal Ajit Shah ◽  
Mike R. Jennings ◽  
Amador Pérez-Tomás ◽  
...  
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Performance Testing ◽  
Pin Diode ◽  
Static Characteristics ◽  
Switching Circuit ◽  
Temperature Range ◽  
Switching Losses ◽  
Current Voltage ◽  
Cryogenic Testing

High-resolution cryogenic performance testing is carried out on 4H-SiC PiN and Schottky diodes. At 2K intervals from 20 to 320K, current-voltage tests are performed to extract static characteristics such as turn-on, ideality factor and barrier height from across the temperature range. We also analyse the performance of the diodes within a low current/voltage switching circuit across the same temperature range using an inductive switching setup. Both diodes suffer markedly increased conduction losses at the lower temperatures, the PiN diode losing all the benefits of conductivity modulation as dopant freezes-out, reducing its series resistance. However, minor gains in the total switching losses are expected at low temperature due to faster switching speeds.

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