Modified crystal quality of Cu(In,Ga)Se2 solar cells: Elimination of island-shaped indium layer by pulse current electrodeposition method

2018 ◽  
Vol 766 ◽  
pp. 178-185 ◽  
Author(s):  
Jinlian Bi ◽  
Jianping Ao ◽  
Ming-Jer Jeng ◽  
Qing Gao ◽  
Zhaojing Zhang ◽  
...  
2015 ◽  
Vol 1771 ◽  
pp. 187-192 ◽  
Author(s):  
Yanke Peng ◽  
Gaoshan Jing ◽  
Tianhong Cui

ABSTRACTPerformance of a perovskite based solar cell is highly determined by the crystalline qualities of the perovskite thin film sandwiched between an electron and a hole transport layer, such as grain size and uniformity of the film. Here, we demonstrated a new hybrid physical-chemical vapor deposition (HPCVD) technique to synthesis high quality perovskite films. First, a PbI2 precursor film was spin-coated on a mesoporous TiO2 (m-TiO2)/compact TiO2 (c-TiO2)/FTO substrate in ambient environment. Then, purified CH3NH3I crystal material was evaporated and the vapor reacted with the PbI2 precursor film in a vacuum pressure/temperature accurately controlled quartz tube furnace. In this technique, high vacuum (2mTorr) and low temperature (100°C) were applied to decrease perovskite film growth rate and reduce perovskite film defects. After vapor reaction, the perovskite film was annealed at 100°C for 10min in 20mTorr vacuum to recrystallize and remove CH3NH3I residue in order to further improve crystal quality of the thin film. Crystal quality of this perovskite thin film was characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). SEM and AFM results illustrate perovskite thin films synthesized by this technique have larger grain sizes and more uniformity (RMS 11.6nm/Ra 9.3nm) superior to most existing methods. Strong peaks shown in the XRD chart at 14.18°, 28.52°, 31.96°, which were assigned to (110), (220), (330) miller indices of CH3NH3PbI3 perovskite crystal, indicate the complete reaction between CH3NH3I vapor and PbI2 precursor layer. High power conversion efficiency (PCE) up to 12.3% and stable efficiencies under four hours illumination of AM1.5 standard were achieved by these solar cells. This vacuum/vapor based technique is compatible with conventional semiconductor fabrication techniques and high quality perovskite film could be achieved through delicate process control. Eventually, perovskite based solar cells could be mass produced in low cost for large scale applications by this novel technique.


2006 ◽  
Vol 910 ◽  
Author(s):  
Ivan Gordon ◽  
Dries Van Gestel ◽  
Lode Carnel ◽  
Kris Van Nieuwenhuysen ◽  
Guy Beaucarne ◽  
...  

AbstractA considerable cost reduction could be achieved in photovoltaics if efficient solar cells could be made from thin polycrystalline-silicon (pc-Si) layers. Aluminum-induced crystallization (AIC) of amorphous silicon followed by epitaxial thickening is an effective way to obtain large-grained pc-Si layers with excellent properties for solar cells. To obtain efficient solar cells, the electronic quality of the pc-Si material obtained by AIC has to be optimized and the cell design has to be adapted to the material. In this paper, we report on pc-Si solar cells made by AIC in combination with thermal CVD on ceramic alumina substrates. We made pc-Si solar cells on alumina substrates that showed Voc values up to 533 mV and efficiencies up to 5.9%. This is the highest efficiency ever achieved with pc-Si solar cells on ceramic substrates where no (re)melting of silicon was used. We demonstrate that the quality of the pc-Si material can be improved drastically by reducing the substrate roughness using spin-on oxides. We further show that a-Si/c-Si heterojunctions lead to much higher Voc values than diffused homojunctions. A cell concept that incorporates spin-on oxides and heterojunction emitters is therefore best suited to obtain efficient pc-Si solar cells on alumina substrates.


2006 ◽  
Vol 2006 (3) ◽  
pp. 266-270 ◽  
Author(s):  
A. N. Gulivets ◽  
V. A. Zabludovskii ◽  
A. S. Baskevich

Author(s):  
Wenjuan Wu ◽  
Xi Xi ◽  
Liping Chen ◽  
Feng Gao ◽  
Jin Xu ◽  
...  
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