Low current operation of GaN-based blue-violet laser diodes fabricated on sapphire substrate using high-temperature-grown single-crystal AlN buffer layer

2007 ◽  
Vol 298 ◽  
pp. 682-686 ◽  
Author(s):  
Yasuo Ohba ◽  
Toru Gotoda ◽  
Kei Kaneko
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Laser Diodes ◽  
Current Operation ◽  
Aln Buffer ◽  
Grown Single Crystal

Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

2005 ◽  
Vol 198 (1-3) ◽  
pp. 350-353 ◽  
Author(s):  
Xianfeng Ni ◽  
Liping Zhu ◽  
Zhizhen Ye ◽  
Zhe Zhao ◽  
Haiping Tang ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Aln Buffer

Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer

2019 ◽  
Vol 494 ◽  
pp. 644-650 ◽  
Author(s):  
Wen-Cheng Ke ◽  
Zhong-Yi Liang ◽  
Solomun Teklahymanot Tesfay ◽  
Chih-Yung Chiang ◽  
Cheng-Yi Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Aln Buffer

AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer

2013 ◽  
Vol 11 (10) ◽  
pp. 102304-102306 ◽  
Author(s):  
Junqin Zhang Junqin Zhang ◽  
Yintang Yang Yintang Yang ◽  
Hujun Jia Hujun Jia
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Aln Buffer ◽  
Ultraviolet Photodetectors
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