Mechanism for Reducing Dislocations at the Initial Stage of GaN Growth on Sapphire Substrates Using High-Temperature-Grown Single-Crystal AlN Buffer Layers

2002 ◽  
Vol 41 (Part 2, No. 6A) ◽  
pp. L615-L618 ◽  
Author(s):  
Yasuo Ohba ◽  
Susumu Iida
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Initial Stage ◽  
Aln Buffer ◽  
Grown Single Crystal

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

1993 ◽  
Vol 8 (10) ◽  
pp. 2613-2616 ◽  
Author(s):  
Jennifer Ross ◽  
Mike Rubin ◽  
T.K. Gustafson
Keyword(s):  
Single Crystal ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Reactive Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Aln Buffer

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550 and 620 °C. However, using a high temperature 200 Å AlN buffer layer epitaxial GaN is produced. Crystal structure and quality are measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.

Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

2009 ◽  
Vol 38 (9) ◽  
pp. 1938-1943 ◽  
Author(s):  
J. N. Dai ◽  
Z. H. Wu ◽  
C. H. Yu ◽  
Q. Zhang ◽  
Y. Q. Sun ◽  
...  
Keyword(s):  
Comparative Study ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Mocvd Growth ◽  
Aln Buffer

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

1995 ◽  
Vol 67 (3) ◽  
pp. 401-403 ◽  
Author(s):  
T. Warren Weeks ◽  
Michael D. Bremser ◽  
K. Shawn Ailey ◽  
Eric Carlson ◽  
William G. Perry ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Aln Buffer

Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers

2002 ◽  
Vol 237-239 ◽  
pp. 1133-1138 ◽  
Author(s):  
M. Tabuchi ◽  
H. Kyouzu ◽  
Y. Takeda ◽  
S. Yamaguchi ◽  
H. Amano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Scale ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Scale Characterization ◽  
Aln Buffer

Strain Evolution in High Temperature AlN Buffer Layers for HVPE-GaN Growth

2002 ◽  
Vol 190 (1) ◽  
pp. 59-64 ◽  
Author(s):  
V. Darakchieva ◽  
J. Birch ◽  
P.P. Paskov ◽  
S. Tungasmita ◽  
T. Paskova ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layers ◽  
Strain Evolution ◽  
Aln Buffer
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