Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

The effects of the thickness of the large-mismatched amorphous In0.6Ga0.4As buffer layer on the In0.3Ga0.7As epi-films grown on the GaAs substrate have been systematically investigated.

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Influence of the low-temperature buffer layer on InP epitaxial growth on GaAs substrates

10.1117/12.635767 ◽

2005 ◽

Author(s):

Deping Xiong ◽

Qi Wang ◽

Aiguang Ren ◽

Hui Huang ◽

Yongqing Huang ◽

...

Keyword(s):

Low Temperature ◽

Epitaxial Growth ◽

Buffer Layer ◽

Gaas Substrates

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Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

Uspekhi Fizicheskih Nauk ◽

10.3367/ufnr.2014.12.037745 ◽

2016 ◽

Vol 186 (5) ◽

pp. 518-523

Author(s):

Hiroshi Amano

Keyword(s):

Electron Beam ◽

Low Temperature ◽

Buffer Layer ◽

Electron Beam Irradiation ◽

Low Energy ◽

Energy Electron ◽

Beam Irradiation ◽

Mg Doping ◽

Low Energy Electron ◽

P Type

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The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

Journal of Electronic Materials ◽

10.1007/s11664-015-4210-x ◽

2015 ◽

Vol 45 (2) ◽

pp. 859-866 ◽

Cited By ~ 3

Author(s):

Wei-Ching Huang ◽

Chung-Ming Chu ◽

Chi-Feng Hsieh ◽

Yuen-Yee Wong ◽

Kai-wei Chen ◽

...

Keyword(s):

Low Temperature ◽

Buffer Layer ◽

Material Properties ◽

Double Step ◽

Nucleation Layer ◽

Aln Buffer

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Silicon Heterojunction Solar Cell: A New Buffer Layer Concept With Low-Temperature Epitaxial Silicon

IEEE Transactions on Electron Devices ◽

10.1109/ted.2004.836801 ◽

2004 ◽

Vol 51 (11) ◽

pp. 1818-1824 ◽

Cited By ~ 22

Author(s):

E. Centurioni ◽

D. Iencinella ◽

R. Rizzoli ◽

F. Zignani

Keyword(s):

Solar Cell ◽

Low Temperature ◽

Buffer Layer ◽

Heterojunction Solar Cell ◽

Epitaxial Silicon ◽

Silicon Heterojunction Solar Cell ◽

Layer Concept

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Magnetic Anisotropy in Electrodeposited CO Films and spin-valves on Gaas Substrates

MRS Proceedings ◽

10.1557/proc-562-21 ◽

1999 ◽

Vol 562 ◽

Cited By ~ 2

Author(s):

K. Attenborough ◽

M. Cerisier ◽

H. Boeve ◽

J. De Boeck ◽

G. Borghs ◽

...

Keyword(s):

Magnetic Anisotropy ◽

Buffer Layer ◽

Structural Properties ◽

Easy Axis ◽

Spin Valve ◽

X Ray Diffraction ◽

X Ray ◽

Cu Films ◽

Gaas Substrates ◽

Unique Spin

ABSTRACTWe have studied the magnetic and structural properties of thin electrodeposited Co and Cu layers grown directly onto (100) n-GaAs and have investigated the influence of a buffer layer. A dominant fourfold anisotropy with a uniaxial contribution is observed in 10 nm Co electrodeposited films on GaAs. An easy axis is observed in the [001] GaAs direction with two hard axes of differing coercivities parallel to the [011] and [011] directions. For thicker films the easy axes in the [001] direction becomes less pronounced and the fourfold anisotropy becomes less dominant. Co films of similar thicknesses deposited onto an electrodeposited Cu buffer layer were nearly isotropic. From X-ray diffraction 21 nm Co layers on GaAs were found to be hcp with the c-axis tending to be in the plane of the film. The anisotropy is ascribed to the Co/GaAs interface and is held responsible for the unique spin-valve properties seen recently in electrodeposited Co/Cu films.

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