The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

2015 ◽  
Vol 45 (2) ◽  
pp. 859-866 ◽  
Author(s):  
Wei-Ching Huang ◽  
Chung-Ming Chu ◽  
Chi-Feng Hsieh ◽  
Yuen-Yee Wong ◽  
Kai-wei Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Material Properties ◽  
Double Step ◽  
Nucleation Layer ◽  
Aln Buffer

Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
A. M. Sanchez ◽  
P. Ruterana ◽  
P. Vennegues ◽  
F. Semond ◽  
F. J. Pacheco ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Buffer Layers ◽  
Nucleation Layer ◽  
Buffer Layer Thickness ◽  
Aln Buffer

ABSTRACTIn this work it is shown that thin AlN buffer layers cause N-polarity GaN epilayers, with a high inversion domains density. When the AlN thickness increases, the polarity of the epilayer changes to Ga. The use of a low temperature AlN nucleation layer leads to a flat AlN/Si(111) interface. This contributes to decrease the inversion domains density in the overgrown GaN epilayer with a Ga polarity.

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer

2013 ◽  
Vol 11 (10) ◽  
pp. 102304-102306 ◽  
Author(s):  
Junqin Zhang Junqin Zhang ◽  
Yintang Yang Yintang Yang ◽  
Hujun Jia Hujun Jia
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Aln Buffer ◽  
Ultraviolet Photodetectors

scholarly journals Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

2020 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Ivan Martinovic ◽  
Babak Bakhit ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Carbon ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
Aln Buffer ◽  
Oxygen Impurities

<div>Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in</div><div>electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an</div><div>AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,</div><div>we present a low temperature atomic layer deposition (ALD) process using</div><div>tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting</div><div>behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were</div><div>crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with</div><div>low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew</div><div>epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based</div><div>electronic devices.</div>

scholarly journals Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

2020 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Ivan Martinovic ◽  
Babak Bakhit ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Carbon ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
Aln Buffer ◽  
Oxygen Impurities

<div>Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in</div><div>electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an</div><div>AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,</div><div>we present a low temperature atomic layer deposition (ALD) process using</div><div>tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting</div><div>behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were</div><div>crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with</div><div>low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew</div><div>epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based</div><div>electronic devices.</div>

scholarly journals Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

2020 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Ivan Martinovic ◽  
Babak Bakhit ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Carbon ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
Aln Buffer ◽  
Oxygen Impurities

<div>Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in</div><div>electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an</div><div>AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,</div><div>we present a low temperature atomic layer deposition (ALD) process using</div><div>tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting</div><div>behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were</div><div>crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with</div><div>low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew</div><div>epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based</div><div>electronic devices.</div>

Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer

2005 ◽  
Vol 44 (6A) ◽  
pp. 3913-3917 ◽  
Author(s):  
Michinobu Tsuda ◽  
Krishnan Balakrishnan ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Aln Buffer

scholarly journals Solar-Blind AlGaN Heterostructure Photodiodes

2000 ◽  
Vol 5 (1) ◽  
Author(s):  
J.D. Brown ◽  
Jizhong Li ◽  
P. Srinivasan ◽  
J. Matthews ◽  
J.F. Schetzina
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Internal Quantum Efficiency ◽  
Base Layer ◽  
Spectral Responsivity ◽  
Uv Detector ◽  
Solar Blind ◽  
Aln Buffer ◽  
P Type

A backside-illuminated solar-blind UV detector based on an AlGaN p-i-n heterostructure has been successfully synthesized, fabricated and tested. The p-i-n photodiode structure consists of a 1.0 μm n-type Al0.64Ga0.36N:Si layer grown by MOVPE onto a low temperature AlN buffer layer on a polished sapphire substrate. On top of this base layer is a 0.2 μm undoped Al0.47Ga0.53N active layer and a 0.5 μm p-type Al0.47Ga0.53N:Mg top layer. Square mesas of area A = 4 × 10−4 cm2 were obtained by reactive ion etching using BCl3. The solar-blind photodiode exhibits a very narrow UV spectral responsivity band peaked at 273 nm with a FWHM = 21 nm. Maximum responsivity R = 0.051 A/W at 273 nm, corresponding to an internal quantum efficiency of 27%. R0A values up to 8 × 107Ω-cm2 were obtained, corresponding to D* = 3.5 × 1012 cm Hz1/2W−1 at 273 nm.

Sign in / Sign up

Export Citation Format

Share Document