scholarly journals On the dynamics of thin layers of viscous flows inside another viscous fluid

2021 ◽  
Vol 300 ◽  
pp. 252-311
Author(s):  
Tania Pernas Castaño ◽  
Juan J.L. Velázquez
Keyword(s):  
Viscous Fluid ◽  
Viscous Flows ◽  
Thin Layers

On asymmetrical slow viscous flows caused by the motion of two equal spheres almost in contact

1969 ◽  
Vol 65 (2) ◽  
pp. 543-556 ◽  
Author(s):  
M. E. O'Neill
Keyword(s):  
Exact Solution ◽  
Viscous Fluid ◽  
Viscous Flow ◽  
Asymptotic Theory ◽  
Viscous Flows ◽  
Slow Viscous Flow ◽  
Angular Velocities ◽  
Well Posed

An exact solution is given for the slow viscous flow caused by the translation of two equal spheres in contact with equal velocities perpendicular to their line of centres. An asymptotic theory is presented for solving the problem when two equal spheres of radius a almost in contact rotate with equal and opposite angular velocities. The problem when the spheres touch is shown not to be well posed; the forces acting on the spheres are shown to be O(1) and the couples of the form α log∈ + β where α and β are independent of the minimum clearance 2∈α between the spheres and have been determined explicitly. The relevance of the results to the free settling of two spheres in a viscous fluid under the influence of gravity is discussed.

scholarly journals Soft-lubrication interactions between a rigid sphere and an elastic wall

2021 ◽  
Vol 933 ◽  
Author(s):  
Vincent Bertin ◽  
Yacine Amarouchene ◽  
Elie Raphaël ◽  
Thomas Salez
Keyword(s):  
Stress Field ◽  
Viscous Fluid ◽  
Thin Layers ◽  
Reciprocal Theorem ◽  
Rigid Sphere ◽  
Hydrodynamic Stress ◽  
Soft Surface ◽  
Elastic Wall ◽  
Elastic Substrates ◽  
Small Deformations

The motion of an object within a viscous fluid and in the vicinity of a soft surface induces a hydrodynamic stress field that deforms the latter, thus modifying the boundary conditions of the flow. This results in elastohydrodynamic interactions experienced by the particle. Here, we derive a soft-lubrication model, in order to compute all the forces and torque applied on a rigid sphere that is free to translate and rotate near an elastic wall. We focus on the limit of small deformations of the surface with respect to the fluid-gap thickness, and perform a perturbation analysis in dimensionless compliance. The response is computed in the framework of linear elasticity, for planar elastic substrates in the limiting cases of thick and thin layers. The EHD forces are also obtained analytically using the Lorentz reciprocal theorem.

Immunoferritin localization of intracellular antigens in positively stained frozen sections

1978 ◽  
Vol 36 (2) ◽  
pp. 168-169
Author(s):  
K. T. Tokuyasu
Keyword(s):  
Surface Tension ◽  
Water Surface ◽  
Thin Layers ◽  
The Other ◽  
Positive Staining ◽  
Frozen Sections ◽  
The Past ◽  
Ultrathin Frozen Sections ◽  
Definition Of

During the past investigations of immunoferritin localization of intracellular antigens in ultrathin frozen sections, we found that the degree of negative staining required to delineate u1trastructural details was often too dense for the recognition of ferritin particles. The quality of positive staining of ultrathin frozen sections, on the other hand, has generally been far inferior to that attainable in conventional plastic embedded sections, particularly in the definition of membranes. As we discussed before, a main cause of this difficulty seemed to be the vulnerability of frozen sections to the damaging effects of air-water surface tension at the time of drying of the sections.Indeed, we found that the quality of positive staining is greatly improved when positively stained frozen sections are protected against the effects of surface tension by embedding them in thin layers of mechanically stable materials at the time of drying (unpublished).

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Domain structures in thin layers of a ferrocolloid

1993 ◽  
Vol 3 (11) ◽  
pp. 1633-1645 ◽  
Author(s):  
Yu. A. Buyevich ◽  
A. Yu. Zubarev
Keyword(s):  
Thin Layers ◽  
Domain Structures

INTERNAL FRICTION INVESTIGATIONS OF ELECTROLYTICALLY DEPOSITED THIN LAYERS

1983 ◽  
Vol 44 (C9) ◽  
pp. C9-487-C9-492
Author(s):  
G. Haneczok ◽  
R. Kuśka ◽  
R. Kwiatkowski ◽  
J. W. Moro
Keyword(s):  
Internal Friction ◽  
Thin Layers

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

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