B2O3-modified fused silica microwave dielectric materials with ultra-low dielectric constant

2015 ◽  
Vol 35 (6) ◽  
pp. 1799-1805 ◽  
Author(s):  
Lei Li ◽  
Cong Hui Liu ◽  
Jun Yao Zhu ◽  
Xiang Ming Chen
Keyword(s):  
Dielectric Constant ◽  
Dielectric Materials ◽  
Fused Silica ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Microwave Dielectric

Intrinsic low dielectric behaviour of a highly thermally stable Sr-based metal–organic framework for interlayer dielectric materials

2014 ◽  
Vol 2 (19) ◽  
pp. 3762-3768 ◽  
Author(s):  
Muhammad Usman ◽  
Cheng-Hua Lee ◽  
Dung-Shing Hung ◽  
Shang-Fan Lee ◽  
Chih-Chieh Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Organic Framework ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Water Molecules ◽  
Compound A ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Metal Organic ◽  
Organic Framework

A Sr-based metal–organic framework exhibits an intrinsic low dielectric constant after removing the water molecules. A low dielectric constant and high thermal stability make this compound a candidate for use as a low-k material.

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

Siloxane Polymers as Low Dielectric Materials for Microelectronics

1995 ◽  
Vol 390 ◽  
Author(s):  
C. P. Wong
Keyword(s):  
Dielectric Constant ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Dimensional Structure ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
High Dielectric

ABSTRACTA modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.

Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications

2011 ◽  
Vol 110-116 ◽  
pp. 5380-5383
Author(s):  
Tejas R. Naik ◽  
Veena R. Naik ◽  
Nisha P. Sarwade
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Novel Materials ◽  
Low Dielectric ◽  
Processing Properties ◽  
New Generation ◽  
Low K

Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

Low-Temperature Sintering and Microwave Dielectric Properties of (Ca0.9Mg0.1)SiO3 Ceramic with Li2CO3 Addition

2014 ◽  
Vol 602-603 ◽  
pp. 748-751 ◽  
Author(s):  
Xin Hui Zhao ◽  
Min Jia Wang ◽  
Qi Long Zhang ◽  
Hui Yang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Low Dielectric Constant ◽  
Low Temperature Sintering ◽  
Low Dielectric ◽  
Densification Temperature ◽  
Microwave Dielectric

(Ca0.9Mg0.1)SiO3ceramics possess a low dielectric constant and a highQfvalue, however, the densification temperature of (Ca0.9Mg0.1)SiO3ceramics is higher than 1280°C. In this paper, the effect of Li2CO3addition on sinterability and dielectric properties of (Ca0.9Mg0.1)SiO3ceramics were studied. The phase presence and surface morphology were determined by XRD and SEM techniques, respectively. CaSiO3and Ca2MgSi2O7phases were observed. With the addition of >2.0 wt% Li2CO3, the sintering temperature of (Ca0.9Mg0.1)SiO3ceramic was significantly lowered, reaching to 1070°C. (Ca0.9Mg0.1)SiO3ceramics with 4wt% Li2CO3sintered at 1070°C for 3 h shows excellent dielectric properties:εr=5.91,Qf= 15300GHz (at 10GHz).

scholarly journals Microwave dielectric properties of Na+-substituted CaMg0.9Li0.2Si2O6 ceramics

2022 ◽  
Vol 355 ◽  
pp. 01024
Author(s):  
Fangyi Huang ◽  
Hua Su ◽  
Xiaoli Tang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bulk Density ◽  
Microwave Dielectric Properties ◽  
Solid State Reaction Method ◽  
Low Dielectric Constant ◽  
Second Phase ◽  
Experimental Sample ◽  
Low Dielectric ◽  
Microwave Dielectric

Ceramics with low dielectric constant are widely used in high frequency substrates. The low temperature sintered CaMg0.9-xNa2xLi0.2Si2O6(x = 0–0.05 and 0.1) ceramics with low dielectric constant and dielectric loss were prepared by the traditional solid-state reaction method, with 0.5wt%LBSCA additive. The XRD patterns of the samples were obtained by X-ray diffraction and it was found that there were three ceramic components, CaMgSi2O6, CaSiO3 and Na2MgSiO4, which indicated that the experimental sample was a multiphase ceramic system. Through the trend of bulk density as functions of the content of substitution and the change of SEM morphology, it could be found that appropriate amount of Na+ substitution can promote the grain growing and the densification of ceramics. Results demonstrated that both the Q × f and εr were relevant to bulk density and the second phase. The τf was also affected by the second phase to some extent. In particular, the ceramics sintered at 925 °C for 3h possessed the desirable microwave dielectric properties for LTCC application: εr = 7.03, Q × f = 17,956 GHz, and τf= −79 ppm/°C.

Mechanical Properties of Low Dielectric-Constant Organic-Inorganic Hybrids

1999 ◽  
Vol 576 ◽  
Author(s):  
Robert F. Cook
Keyword(s):  
Dielectric Constant ◽  
Thermomechanical Properties ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Curing Conditions ◽  
Low Dielectric ◽  
Thermal Expansion Coefficients ◽  
Residual Tension ◽  
Expansion Coefficients

ABSTRACTSpin-on glasses, generated by the condensation of an organic-inorganic hybrid silsesquioxane (SSQ), have great potential as low dielectric-constant semiconductor interconnection materials. After curing and condensation SSQ materials consist of an amorphous, inorganic, –Si–O-Sibridging network with organic, non-bridging –Si–R side groups. Relative dielectric constants in the range 2.5–3.3 are obtained for SSQ materials, depending on the curing conditions, and compare with 4.0 for conventionally-used fused silica. The non-bridging side groups significantly disrupt the SSQ network—occupying more than 25% of the Si bonds—and lead to materials that are considerably less stiff, hard and tough than fused silica. Perhaps more importantly, SSQ materials have thermal expansion coefficients greater than that of the intended Si substrate and therefore finish curing in a state of residual tension, leading to a susceptibility to stress-corrosion cracking. In this paper the development of thermomechanical properties during curing of SSQ spin-on glasses is considered and related to the driving force for film cracking deriving from the residual tension. Various crack suppression schemes involving mechanisms both intrinsic and extrinsic to the base SSQ are discussed.

Dielectric Properties Of Sol - Gel Silica Glasses

1986 ◽  
Vol 73 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

ABSTRACTDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (∼2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

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