Intrinsic low dielectric behaviour of a highly thermally stable Sr-based metal–organic framework for interlayer dielectric materials

2014 ◽  
Vol 2 (19) ◽  
pp. 3762-3768 ◽  
Author(s):  
Muhammad Usman ◽  
Cheng-Hua Lee ◽  
Dung-Shing Hung ◽  
Shang-Fan Lee ◽  
Chih-Chieh Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Organic Framework ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Water Molecules ◽  
Compound A ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Metal Organic ◽  
Organic Framework

A Sr-based metal–organic framework exhibits an intrinsic low dielectric constant after removing the water molecules. A low dielectric constant and high thermal stability make this compound a candidate for use as a low-k material.

The low dielectric constant and relaxation dielectric behavior in hydrogen-bonding metal–organic frameworks

RSC Advances ◽  
2015 ◽  
Vol 5 (56) ◽  
pp. 45213-45216 ◽  
Author(s):  
Shan-Shan Yu ◽  
Guo-Jun Yuan ◽  
Hai-Bao Duan
Keyword(s):  
Dielectric Constant ◽  
Hydrogen Bonding ◽  
High Temperature ◽  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Dielectric Behavior ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Metal Organic ◽  
Organic Framework

A 3D hydrogen-bonding metal–organic framework shows a low dielectric constant and relaxation dielectric behavior at high temperature.

Siloxane Polymers as Low Dielectric Materials for Microelectronics

1995 ◽  
Vol 390 ◽  
Author(s):  
C. P. Wong
Keyword(s):  
Dielectric Constant ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Dimensional Structure ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
High Dielectric

ABSTRACTA modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.

Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications

2011 ◽  
Vol 110-116 ◽  
pp. 5380-5383
Author(s):  
Tejas R. Naik ◽  
Veena R. Naik ◽  
Nisha P. Sarwade
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Novel Materials ◽  
Low Dielectric ◽  
Processing Properties ◽  
New Generation ◽  
Low K

Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

scholarly journals Facile Proton Conduction via Ordered Water Molecules in a Phosphonate Metal−Organic Framework

2010 ◽  
Vol 132 (40) ◽  
pp. 14055-14057 ◽  
Author(s):  
Jared M. Taylor ◽  
Roger K. Mah ◽  
Igor L. Moudrakovski ◽  
Christopher I. Ratcliffe ◽  
Ramanathan Vaidhyanathan ◽  
...  
Keyword(s):  
Metal Organic Framework ◽  
Proton Conduction ◽  
Water Molecules ◽  
Metal Organic ◽  
Ordered Water ◽  
Organic Framework

Zn(ii)-based metal–organic framework: an exceptionally thermally stable, guest-free low dielectric material

2017 ◽  
Vol 5 (6) ◽  
pp. 1508-1513 ◽  
Author(s):  
Shruti Mendiratta ◽  
Muhammad Usman ◽  
Chun-Chi Chang ◽  
Yung-Chi Lee ◽  
Jenq-Wei Chen ◽  
...  
Keyword(s):  
Dielectric Material ◽  
Metal Organic Framework ◽  
Dielectric Behaviour ◽  
Thermally Stable ◽  
Low Dielectric ◽  
Metal Organic ◽  
Organic Framework

An exceptional thermally stable, chemically stable and guest-free Zn-based metal–organic framework exhibits low dielectric behaviour.

The effects of framework dynamics on the behavior of water adsorbed in the [Zn(l-L)(Cl)] and Co-MOF-74 metal–organic frameworks

2016 ◽  
Vol 18 (11) ◽  
pp. 8196-8204 ◽  
Author(s):  
Zachary L. Terranova ◽  
Francesco Paesani
Keyword(s):  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Water Molecules ◽  
Density Distributions ◽  
Metal Organic ◽  
Organic Framework

Density distributions of water molecules in the pores of the [Zn(l-L)(Cl)] metal–organic framework.

Enhancing Proton Conductivity in a 3D Metal–Organic Framework by the Cooperation of Guest [Me2NH2]+ Cations, Water Molecules, and Host Carboxylates

2017 ◽  
Vol 17 (6) ◽  
pp. 3556-3561 ◽  
Author(s):  
Lifei Zou ◽  
Shuo Yao ◽  
Jun Zhao ◽  
Dong-Sheng Li ◽  
Guanghua Li ◽  
...  
Keyword(s):  
Proton Conductivity ◽  
Metal Organic Framework ◽  
Water Molecules ◽  
Metal Organic ◽  
Organic Framework
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