scholarly journals On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation

2017 ◽  
Vol 181 ◽  
pp. 223-229 ◽  
Author(s):  
Hieu T. Nguyen ◽  
Daniel Macdonald
Keyword(s):  
Luminescence Spectra ◽  
High Excitation ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

scholarly journals Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

2002 ◽  
Vol 14 (48) ◽  
pp. 13185-13193 ◽  
Author(s):  
E Simoen ◽  
R Loo ◽  
C Claeys ◽  
O De Gryse ◽  
P Clauws ◽  
...  
Keyword(s):  
Optical Spectroscopy ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Oxygen Precipitates

Comment on “The diffusion of antimony in heavily doped and (sic) n- and p-type silicon” [J. Mater. Res. 1, 705 (1986)]

1987 ◽  
Vol 2 (4) ◽  
pp. 538-539
Author(s):  
F. F. Morehead
Keyword(s):  
Electric Fields ◽  
Original Data ◽  
Type Silicon ◽  
Donor Acceptor ◽  
Uniform Background ◽  
Background Doping ◽  
Heavily Doped ◽  
P Type

R. B. Fair et al. have analyzed original data on the effect of heavy, uniform background doping with As and B on the diffusivity of Sb in Si at 1000°–1200°C. Their analysis attributed a role to “electric fields” and led to the conclusion that, for n-type background doping, Sb diffusion is dominated by double-negatively charged vacancies with no contribution from V−. For p-type backgrounds they concluded that donor-acceptor pairing alone retards the diffusion. Here it is shown (1) that electric fields do not play a role in their experiments, (2) that the contribution of V− to Sb diffusion in an n-type background is not zero but is roughly equal to that of V= for n/ni = 10, and (3) that the retardation of Sb diffusion in p-type Si is due both to donor-acceptor pairing and, principally, to the elimination of the contributions of V− and V=.

scholarly journals Pore Morphology of Heavily Doped P-Type Porous Silicon

Proceedings ◽  
2018 ◽  
Vol 4 (1) ◽  
pp. 14 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Organic Solvent ◽  
Potassium Hydroxide ◽  
Pore Diameter ◽  
Strong Dependence ◽  
Pore Morphology ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Macropore Formation

Tuning the pore diameter of porous silicon (PS) is essential for some applications such as biosensing, where the pore size can filter the entrance of some analytes or increase its sensitivity. However, macropore (>50 nm) formation on p-type silicon is still poorly known due to the strong dependence on resistivity. Electrochemically etching heavily doped p-type silicon usually forms micropores (<5 nm), but it has been found that bigger sizes can be achieved by adding an organic solvent to the electrolyte. In this work, we present the results of using dimethylformamide (DMF), dimethylsulfoxide (DMSO), potassium hydroxide (KOH) and sodium hydroxide (NaOH) for macropore formation in p-type silicon with a resistivity between 0.001 and 0.02 Ω∙cm, achieving pore sizes from 5 to 100 nm.

Progress in Surface Passivation of Heavily Doped n-Type and p-Type Silicon by Plasma-Deposited AlO $_{\bm x}$/SiN$_{\bm x}$ Dielectric Stacks

2013 ◽  
Vol 3 (4) ◽  
pp. 1163-1169 ◽  
Author(s):  
Shubham Duttagupta ◽  
Fa-Jun Ma ◽  
Serena Fen Lin ◽  
Thomas Mueller ◽  
Armin G. Aberle ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type

Can the dynamics and reactivity of and in heavily doped n-type and p-type silicon be studied?

2009 ◽  
Vol 404 (5-7) ◽  
pp. 831-833 ◽  
Author(s):  
A.I. Mansour ◽  
K.H. Chow ◽  
Z. Salman ◽  
I. Fan ◽  
P.J.C. King ◽  
...  
Keyword(s):  
Type Silicon ◽  
Heavily Doped ◽  
P Type

Test Methods for Measuring Bulk Copper and Nickel in Heavily Doped p-Type Silicon Wafers

2006 ◽  
Vol 153 (6) ◽  
pp. G566 ◽  
Author(s):  
Laszlo Fabry ◽  
Robert Hoelzl ◽  
Andre Andrukhiv ◽  
Kei Matsumoto ◽  
Joann Qiu ◽  
...  
Keyword(s):  
Test Methods ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type

scholarly journals Техника электрохимического вольт-фарадного профилирования сильно легированных структур с резким профилем распределения примеси

2019 ◽  
Vol 53 (2) ◽  
pp. 281 ◽  
Author(s):  
Д.С. Фролов ◽  
Г.Е. Яковлев ◽  
В.И. Зубков
Keyword(s):  
Ion Implantation ◽  
Doping Profile ◽  
Electrochemical Capacitance ◽  
Optimal Measurement ◽  
Type Silicon ◽  
Capacitance Voltage ◽  
Silicon Structures ◽  
Heavily Doped ◽  
P Type ◽  
Selection Of

AbstractThe specific features of applying electrochemical capacitance–voltage profiling to investigate heavily doped structures with a sharp doping profile are considered. Criteria are presented, and recommendations are given for selection of the optimal measurement parameters, and the necessity of increasing the frequency, at which the capacitance is measured during profiling, is substantiated. The described procedure is considered by the example of profiling p -type silicon structures with ion implantation as well as n -GaAs epitaxial and substrate structures for p HEMT devices.

Sign in / Sign up

Export Citation Format

Share Document