Enhanced coercivity of HCP Co–Pt alloy thin films on a glass substrate at room temperature for patterned media

2015 ◽  
Vol 391 ◽  
pp. 12-16 ◽  
Author(s):  
Y.S. Chen ◽  
An-Cheng Sun ◽  
H.Y. Lee ◽  
Hsi-Chuan Lu ◽  
Sea-Fue Wang ◽  
...  
2013 ◽  
Vol 665 ◽  
pp. 263-266
Author(s):  
M.H. Mangrola ◽  
A.S. Pillai ◽  
B.H. Parmar ◽  
V.G. Joshi

Transparent thin film of pure TiO2and 3% Sr-doped TiO2(Ti0.97Sr0.03O2) were prepared by spin coating technique onto well-cleaned glass substrate. The dielectric behaviour of the films were studied at room temperature for different frequencies. The capacitance of both films were is found to decrease with increasing frequency and at higher frequencies capacitance becomes constant. AC conductivity is found to continuously increase with increase in the frequency. At high frequency it doesnt show any change and remains almost constant.


2017 ◽  
pp. 5133-5140
Author(s):  
Salah. M. M.Salman

Multilayer thin films of amorphous arsenic triselenide (As2Se3) were obtained by spin coating solution of an amine salt in amide on glass substrate.  The deposited multilayers in the range of 500 to 1000 nm were optically characterized by measuring the transmission spectra at room temperature.  All used samples were baked and annealed for different periods of times and temperatures.  The effect of layers number, baking times and temperatures on optical parameters were investigated.  The thickness of the prepared samples up to four layers was ranging between 0.1 µm to 0.2 µm.


2014 ◽  
Vol 11 (2) ◽  
pp. 598-604
Author(s):  
Baghdad Science Journal

Polyaniline organic Semiconductor polymer thin films have been prepared by oxidative polymerization at room temperature, this polymer was deposited on glass substrate with thickness 900nm, FTIR spectra was tested , the structural,optical and electrical properties were studied through XRD ,UV-Vis ,IR measurements ,the results was appeared that polymer thin film sensing to NH3 gas.


2001 ◽  
Vol 668 ◽  
Author(s):  
Raquel Caballero ◽  
Cecilia Guillén ◽  
Rocío Bayón

ABSTRACTIn this work, Cu and In thin films, as precursors for CuInSe2 (CIS) formation, have been deposited on glass substrate up to 30 × 30 cm2 area using an electron beam evaporator in sequential processes. In order to obtain a similar global composition, three types of sequential processes of evaporation: A) Cu/In/Cu/In, B) Cu/In/Cu/In/Cu/In and C) In/Cu/In/Cu have been tested. As-grown thin films were studied at room temperature and after 120° C annealing. XRD analysis of these films showed mainly the CuIn2−x (0≤ × ≤ 1) phase at room temperature, and Cu11In9 after annealing at 120° C. After alloying, the films were selenized at temperature between 250° and 400° C in vacuum using elemental selenium vapour. XRD of the selenized thin films corresponding to In/Cu/In/Cu sequence and previously annealing at 120° C, showed the major presence of the polycrystalline chalcopyrite structure CuInSe2 with preferential orientation (112) plane at temperature as low as 250° C. From SEM studies and profilometer measurements a decrease in the mean roughness could be observed after annealing at 120° C. In contrast the resistivity of the films increased.


2017 ◽  
Vol 425 ◽  
pp. 57-62 ◽  
Author(s):  
Yu-Shen Chen ◽  
Hong-Yu Dai ◽  
Yi-Wei Hsu ◽  
Sin-Liang Ou ◽  
Shi-Wei Chen ◽  
...  

2012 ◽  
Vol 576 ◽  
pp. 543-547 ◽  
Author(s):  
Shaiful Bakhtiar Hashim ◽  
Norhidayatul Hikmee Mahzan ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood

Silicon thin film was successfully deposited on glass substrate using Radio frequency (RF) magnetron sputtering. The effect of deposition pressure on the physical and structural properties of thin films on the glass substrate was studied. The film thickness and deposition rate decreased with decreasing deposition pressure. Field emission scanning electron microscopy (FESEM) shows as the deposition pressure increased, the surface morphology transform from concise structured to not closely pack on the surface. Raman spectroscopy result showed that the peak was around 508 cm-1, showing that the thin film is nanocrystalline instead of polycrystalline silicon.


Author(s):  
A. C. Faberge

Benzylamine tartrate (m.p. 63°C) seems to be a better and more convenient substrate for making carbon films than any of those previously proposed. Using it in the manner described, it is easy consistently to make batches of specimen grids as open as 200 mesh with no broken squares, and without individual handling of the grids. Benzylamine tartrate (hereafter called B.T.) is a viscous liquid when molten, which sets to a glass. Unlike polymeric substrates it does not swell before dissolving; such swelling of the substrate seems to be a principal cause of breakage of carbon film. Mass spectroscopic examination indicates a vapor pressure less than 10−9 Torr at room temperature.


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