Room-Temperature Deposition of Silicon Thin Films by RF Magnetron Sputtering

2012 ◽  
Vol 576 ◽  
pp. 543-547 ◽  
Author(s):  
Shaiful Bakhtiar Hashim ◽  
Norhidayatul Hikmee Mahzan ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Deposition Pressure ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Temperature Deposition

Silicon thin film was successfully deposited on glass substrate using Radio frequency (RF) magnetron sputtering. The effect of deposition pressure on the physical and structural properties of thin films on the glass substrate was studied. The film thickness and deposition rate decreased with decreasing deposition pressure. Field emission scanning electron microscopy (FESEM) shows as the deposition pressure increased, the surface morphology transform from concise structured to not closely pack on the surface. Raman spectroscopy result showed that the peak was around 508 cm-1, showing that the thin film is nanocrystalline instead of polycrystalline silicon.

Towards an electronic grade nanoparticle-assembled silicon thin film by ballistic deposition at room temperature: the deposition method, and structural and electronic properties

2017 ◽  
Vol 5 (15) ◽  
pp. 3725-3735 ◽  
Author(s):  
Giorgio Nava ◽  
Francesco Fumagalli ◽  
Salvatore Gambino ◽  
Isabella Farella ◽  
Giorgio Dell'Erba ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electronic Properties ◽  
High Throughput ◽  
Room Temperature ◽  
Plasma Synthesis ◽  
Deposition Method ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Structural And Electronic Properties

High-throughput plasma synthesis of highly crystalline nanoparticle-assembled silicon thin films.

Dielectric and Tunable Properties of Lead Barium Strontium Titanate Thin Films Fabricated by Radio Frequency Magnetron Sputtering Method

2013 ◽  
Vol 652-654 ◽  
pp. 1728-1732
Author(s):  
Zhi Meng Luo ◽  
Xiao Hua Sun ◽  
Shuang Hou ◽  
Ying Yang ◽  
Jun Zou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Loss ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Tunable Properties

The Pb0.25Ba0.15Sr0.6TiO3 (PBST) thin films have been deposited on Pt/Ti/SiO2/Si substrates at different temperatures by radio frequency (rf) magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of PBST thin films were investigated as a function of deposition temperature. It’s found that the orientation of PBST thin films was adjusted by deposition temperature. The PBST thin film deposited at room temperature shows (100) preferred orientation and its dielectric constant and tunability are higher than that of PBST thin film deposited at 450 °C. Furthermore, the PBST thin film deposited at room temperature shows lower dielectric loss and leakage current, which makes it exhibit higher FOM of 49.47 for its appropriate tunability of 44.38% and low dielectric loss of 0.00897.

Aluminum-Copper Bilayers Thin Films Deposited at Room Temperature by RF Magnetron Sputtering

2014 ◽  
Vol 606 ◽  
pp. 105-109
Author(s):  
Zulhelmi Alif Abdul Halim ◽  
Muhamad Azizi Mat Yajid ◽  
Zulkifli Mohd Rosli ◽  
Riyaz Ahmad M. Ali
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Columnar Structure ◽  
Cross Sectional ◽  
X Ray ◽  
Temperature Deposition ◽  
20 Nm

In this work, the effects of room temperature deposition on the structural properties of Al-Cu bilayers thin films were investigated. The bilayers were sputter deposited by RF magnetron sputtering on Si {100} wafers without substrate heating. The thickness of each layer is approximately 500 nm thick. Characterization were performed with grazing incidence X-ray diffraction (XRD) cross-sectional field emission scanning electron microscope (FE-SEM) with chemical analysis by energy dispersive X-ray (EDX) and atomic force microscope (AFM). It was found polycrystalline Al and Cu thin films have been grown with {111} preferred growth orientation with very fine crystallites size (less than 20 nm). The bilayers were in non-strained condition, but each layer shows different morphologies between the columnar and non columnar structure. AFM analysis revealed that the bilayers top surface appears to have higher surface roughness (Ra= 20 nm) due to low adatoms surface mobility during room temperature deposition.

Room temperature deposition of crystalline HfN thin films by DC reactive magnetron sputtering

2021 ◽  
Author(s):  
Wuttichai Phae-ngam ◽  
Tossaporn Lertvanithphol ◽  
Chanunthorn Chananonnawathorn ◽  
Rattanachai Kowong ◽  
Mati Horprathum ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Temperature Deposition

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

PROPERTIES OF ALL-SOLID-STATE LITHIUM-ION RECHARGEABLE BATTERIES DEPOSITED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 27 (22) ◽  
pp. 1350156 ◽  
Author(s):  
R. J. ZHU ◽  
Y. REN ◽  
L. Q. GENG ◽  
T. CHEN ◽  
L. X. LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Coulombic Efficiency ◽  
Electronic Conductivity ◽  
Lithium Ion ◽  
Rf Magnetron Sputtering ◽  
Rechargeable Batteries ◽  
Voltage Range

Amorphous V 2 O 5, LiPON and Li 2 Mn 2 O 4 thin films were fabricated by RF magnetron sputtering methods and the morphology of thin films were characterized by scanning electron microscopy. Then with these three materials deposited as the anode, solid electrolyte, cathode, and vanadium as current collector, a rocking-chair type of all-solid-state thin-film-type Lithium-ion rechargeable battery was prepared by using the same sputtering parameters on stainless steel substrates. Electrochemical studies show that the thin film battery has a good charge–discharge characteristic in the voltage range of 0.3–3.5 V, and after 30 cycles the cell performance turned to become stabilized with the charge capacity of 9 μAh/cm2, and capacity loss of single-cycle of about 0.2%. At the same time, due to electronic conductivity of the electrolyte film, self-discharge may exist, resulting in approximately 96.6% Coulombic efficiency.

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