Alloying and selenization of Cu-In stacked layers evaporated onto large areas

2001 ◽  
Vol 668 ◽  
Author(s):  
Raquel Caballero ◽  
Cecilia Guillén ◽  
Rocío Bayón
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Glass Substrate ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Preferential Orientation ◽  
Chalcopyrite Structure ◽  
Elemental Selenium ◽  
The Mean ◽  
Sequential Processes

ABSTRACTIn this work, Cu and In thin films, as precursors for CuInSe2 (CIS) formation, have been deposited on glass substrate up to 30 × 30 cm2 area using an electron beam evaporator in sequential processes. In order to obtain a similar global composition, three types of sequential processes of evaporation: A) Cu/In/Cu/In, B) Cu/In/Cu/In/Cu/In and C) In/Cu/In/Cu have been tested. As-grown thin films were studied at room temperature and after 120° C annealing. XRD analysis of these films showed mainly the CuIn2−x (0≤ × ≤ 1) phase at room temperature, and Cu11In9 after annealing at 120° C. After alloying, the films were selenized at temperature between 250° and 400° C in vacuum using elemental selenium vapour. XRD of the selenized thin films corresponding to In/Cu/In/Cu sequence and previously annealing at 120° C, showed the major presence of the polycrystalline chalcopyrite structure CuInSe2 with preferential orientation (112) plane at temperature as low as 250° C. From SEM studies and profilometer measurements a decrease in the mean roughness could be observed after annealing at 120° C. In contrast the resistivity of the films increased.

scholarly journals CHARACTERISTICS OF LITHIUM LANTHANUM TITANATE THIN FILMS MADE BY ELECTRON BEAM EVAPORATION FROM NANOSTRUCTURED La0.67-xLi 3xTiO3 TARGET

2017 ◽  
Vol 25 (2) ◽  
pp. 243-250
Author(s):  
Nguyen Nang Dinh ◽  
Le Dinh Trong ◽  
Pham Duy Long
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ionic Conductivity ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Electron Beam Evaporation ◽  
Electrochromic Devices ◽  
Lanthanum Titanate ◽  
Average Size ◽  
Beam Deposition

Bulk nanostructured perovskites of La0.67-xLi3xTiO3 (LLTO) were prepared by using thermally ball-grinding from compounds of La2O3, Li2CO3 and TiO2. From XRD analysis, it was found that LTTO materials were crystallized with nano-size grains of an average size of 30 nm. The bulk ionic conductivity was found strongly dependent on the Li+ composition, the samples with x = 0.11 (corresponding to a La0.56Li0.33TiO3 compound) have the best ionic conductivity, which is ca. 3.2 x 10-3 S/cm at room temperature. The LLTO amorphous films were made by electron beam deposition. At room temperature the smooth films have ionic conductivity of 3.5 x 10-5  S/cm and transmittance of 80%. The optical bandgap of the films was found to be of 2.3 eV. The results have shown that the perovskite La0.56Li0.33TiO3  thin films can be used for a transparent solid electrolyte in ionic battery and in all-solid-state electrochromic devices, in particular.    

Enhanced coercivity of HCP Co–Pt alloy thin films on a glass substrate at room temperature for patterned media

2015 ◽  
Vol 391 ◽  
pp. 12-16 ◽  
Author(s):  
Y.S. Chen ◽  
An-Cheng Sun ◽  
H.Y. Lee ◽  
Hsi-Chuan Lu ◽  
Sea-Fue Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Room Temperature ◽  
Patterned Media ◽  
Pt Alloy

In2O3 Thin Films Prepared on TiAlN Substrates Using a Triethylindium and Oxygen Mixture

2007 ◽  
Vol 124-126 ◽  
pp. 1597-1600
Author(s):  
Hyoun Woo Kim ◽  
Sun Keun Hwang ◽  
Won Seung Cho ◽  
Tae Gyung Ko ◽  
Seung Yong Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Light Emission ◽  
Xrd Analysis ◽  
Oxygen Mixture ◽  
Photoluminescence Spectra ◽  
Sem Images ◽  
Room Temperature Photoluminescence ◽  
Visible Light Emission

This paper reports the fabrication of indium oxide (In2O3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAlN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200°C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.

Effect of Cu/In Ratio on Properties of CuInS2 Films Prepared by Ultrasonic Spray Pyrolysis Method

2011 ◽  
Vol 199-200 ◽  
pp. 1936-1939
Author(s):  
Xiao Zhang ◽  
Hua Wang ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Ming Fang Ren
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Xrd Analysis ◽  
Chalcopyrite Structure ◽  
Spray Pyrolysis Method ◽  
Visible Absorption ◽  
Ultrasonic Spray ◽  
Pyrolysis Method ◽  
Ultrasonic Spray Pyrolysis Method

CuInS2 thin films were prepared on heated glass substrates by ultrasonic spray pyrolysis method. Structure, surface morphology and properties of films with different Cu/In ratios have been investigated. X-ray diffraction (XRD) analysis demonstrated that as-prepared CuInS2 thin films with chalcopyrite structure have a preferential orientation along the (112) direction. SEM study shows films are relatively dense and smooth, but the much bigger grains and the large coherent agglomerates appear in films (Cu/In>1.25) due to the appearance of phase Cu2S. CuInS2 thin film (Cu/In=1.25) has a strong visible absorption and its energy band gap comes up to 1.45eV.

Effects of electron-beam irradiation and substrate temperature on the physical properties of evaporated a-Si:C thin films

1985 ◽  
Vol 63 (6) ◽  
pp. 838-841 ◽  
Author(s):  
R. D. Audas ◽  
C. J. L. Moore ◽  
T. E. W. Sturtevant ◽  
G. W. Johnson ◽  
J. D. Leslie ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Irradiation ◽  
Vitreous Carbon ◽  
Beam Irradiation ◽  
Film Properties ◽  
Temperature Activation ◽  
Substrate Temperatures ◽  
Reference Samples

Thin films of a-Si:C have been prepared by thermal evaporation from resistive- and rf-induction-heated carbon crucibles. Samples were prepared with and without electron-beam irradiation of the substrate during deposition, and the resulting film properties (electrical and optical) were measured. Reference samples prepared with substrate temperatures from 150 to 250 °C and annealing temperatures from 200 to 250 °C had very similar film properties. The use of vitreous carbon instead of compressed carbon for the crucibles reduced the carbon content by about 30% and the oxygen content of the films by more than a factor of four. Electron-beam irradiation of the purer films produced a tenfold decrease in the conductivity at room temperature and an increase of the high-temperature activation energies compared with the reference samples.

Characterization of Nd:Y3Al5O12 Thin Films Prepared by Electron Beam Evaporation Deposition

2013 ◽  
Vol 320 ◽  
pp. 150-154
Author(s):  
Hao Ren ◽  
Qun Zeng ◽  
Xi Hui Liang
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Morphologies ◽  
Ingaas Detector

Nd:YAG thin films have been prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer. The crystallization of Nd:YAG thin films was improved after annealing at 1100 °C for 1 hour in vacuum. Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of4F3/24I11/2of Nd3+in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

Electrical Property of Transparent Thin Films TiO2 and Sr-Doped TiO2 Developed by Spin Coating

2013 ◽  
Vol 665 ◽  
pp. 263-266
Author(s):  
M.H. Mangrola ◽  
A.S. Pillai ◽  
B.H. Parmar ◽  
V.G. Joshi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Property ◽  
Spin Coating ◽  
Glass Substrate ◽  
High Frequency ◽  
Ac Conductivity ◽  
Room Temperature ◽  
Coating Technique ◽  
Increase With Increase

Transparent thin film of pure TiO2and 3% Sr-doped TiO2(Ti0.97Sr0.03O2) were prepared by spin coating technique onto well-cleaned glass substrate. The dielectric behaviour of the films were studied at room temperature for different frequencies. The capacitance of both films were is found to decrease with increasing frequency and at higher frequencies capacitance becomes constant. AC conductivity is found to continuously increase with increase in the frequency. At high frequency it doesnt show any change and remains almost constant.

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