Synthesis of band gap-tunable alkali metal modified graphitic carbon nitride with outstanding photocatalytic H 2 O 2 production ability via molten salt method

2018 ◽  
Vol 34 (10) ◽  
pp. 1932-1938 ◽  
Author(s):  
Xiaoyu Qu ◽  
Shaozheng Hu ◽  
Jin Bai ◽  
Ping Li ◽  
Guang Lu ◽  
...  
2015 ◽  
Vol 332 ◽  
pp. 625-630 ◽  
Author(s):  
Jiannan Zhao ◽  
Lin Ma ◽  
Haoying Wang ◽  
Yanfeng Zhao ◽  
Jian Zhang ◽  
...  

Symmetry ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 411
Author(s):  
Taoreed O. Owolabi ◽  
Mohd Amiruddin Abd Rahman

Graphitic carbon nitride is a stable and distinct two dimensional carbon-based polymeric semiconductor with remarkable potentials in organic pollutants degradation, chemical sensors, the reduction of CO2, water splitting and other photocatalytic applications. Efficient utilization of this material is hampered by the nature of its band gap and the rapid recombination of electron-hole pairs. Heteroatom incorporation due to doping alters the symmetry of the semiconductor and has been among the adopted strategies to tailor the band gap for enhancing the visible-light harvesting capacity of the material. Electron modulation and enhancement of reaction active sites due to doping as evident from the change in specific surface area of doped graphitic carbon nitride is employed in this work for modeling the associated band gap using hybrid genetic algorithm-based support vector regression (GSVR) and extreme learning machine (ELM). The developed GSVR performs better than ELM-SINE (with sine activation function), ELM-TRANBAS (with triangular basis activation function) and ELM-SIG (with sigmoid activation function) model with performance enhancement of 69.92%, 73.59% and 73.67%, respectively, on the basis of root mean square error as a measure of performance. The four developed models are also compared using correlation coefficient and mean absolute error while the developed GSVR demonstrates a high degree of precision and robustness. The excellent generalization and predictive strength of the developed models would ultimately facilitate quick determination of the band gap of doped graphitic carbon nitride and enhance its visible-light harvesting capacity for various photocatalytic applications.


2015 ◽  
Vol 44 (3) ◽  
pp. 1084-1092 ◽  
Author(s):  
Shaozheng Hu ◽  
Fayun Li ◽  
Zhiping Fan ◽  
Fei Wang ◽  
Yanfeng Zhao ◽  
...  

Potassium doped into the g-C3N4 crystal lattice can tune the positions of the CB and VB potentials, influence the structural and optical properties and thus improve the photocatalytic degradation and mineralization ability.


RSC Advances ◽  
2016 ◽  
Vol 6 (30) ◽  
pp. 24976-24984 ◽  
Author(s):  
Biswajit Choudhury ◽  
P. K. Giri

Isotype heterostructure of bulk and nanosheets of graphitic carbon nitride with effective band gap of 2.62 eV and charge carrier mean lifetime of 21 ns exhibits an efficient visible light photocatalysis.


2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Azami M. S. ◽  
Jalil A. A ◽  
Hitam C. N. C. ◽  
Mamat C. R ◽  
Siang T. J. ◽  
...  

Titanium dioxide (TiO2) has drawn widespread interest by researchers as a precious semiconductor that is responsive towards photodegradation of various pollutants. This catalyst has its own limitations such as fast electron-hole recombination, wide band gap, and can only be utilised under ultraviolet (UV) region. In order to overcome these problems, the addition of a metal-free dopant is a common practice to prevent electron-hole recombination and enhance photodegradation under visible light. Among various types of metal-free catalysts, carbon nitride material has received much attention due to its numerous benefits such as good in terms of physical and chemical strength, as well as an attractive electronic band combined with a band gap (2.7 eV). This review summarised recent works in the development of titania incorporated with graphitic carbon nitride (g-C3N4) for enhanced photocatalytic activity.


Author(s):  
Iuliia Melchakova ◽  
Pavel V. Avramov

The atomic and electronic structure and properties of advanced 2D ternary vertical spin-polarized semiconducting heterostructures based on mild band gap graphitic carbon nitride g-C3N4 and ferromagnetic single-layer CrI3 fragments, namely...


2020 ◽  
Vol 34 (32) ◽  
pp. 2050361
Author(s):  
Kaifei Bai ◽  
Zhen Cui ◽  
Enling Li ◽  
Yingchun Ding ◽  
Jiangshan Zheng ◽  
...  

The electronic and optical properties of the adsorption of alkali metals (Li, Na, K, Rb, Cs) on graphitic carbon nitride (g-C3N[Formula: see text] were calculated and studied based on the first principles of density functional theory. The results investigate that alkali metals adsorbed g-C3N4 has metallic properties, while intrinsic g-C3N4 was semiconducting. Importantly, the charge density differential investigated the charge transfer discovered between the alkali metal and the g-C3N4 monolayer. Meanwhile, the charges (electrons) transfer from the alkali metals to the g-C3N4 system leading to the increase of most carriers in the g-C3N4 system, reducing the resistance of sensors, which is conducive to sensor detection applications. The work function of g-C3N4 decreased from 4.82 eV to 4.09 eV. Especially, the work function of Cs-adsorbed g-C3N4 is the lowest at 4.09 eV, and the reduction rate is 15.15 %, indicating it easier to emit electrons from an external electric field. Moreover, the absorption spectrum of the alkali metal adsorbed on g-C3N4 in the visible light range shows absorption peaks at 380 nm, 412 nm, 420 nm and 476 nm, which cover the visible light area. Thus, the alkali metals adsorbed g-C3N4 system can be used for visible light catalytic. Adsorption of alkali metals can expand the application of g-C3N4 in optoelectronic devices.


Sign in / Sign up

Export Citation Format

Share Document