Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks

2019 ◽  
Vol 35 (5) ◽  
pp. 769-776 ◽  
Author(s):  
Shuang Liang ◽  
Gang He ◽  
Die Wang ◽  
Fen Qiao
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Band Alignment ◽  
Gate Stacks ◽  
Interface Chemistry

scholarly journals Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment

ACS Omega ◽  
2019 ◽  
Vol 4 (7) ◽  
pp. 11663-11672 ◽  
Author(s):  
Shuang Liang ◽  
Gang He ◽  
Die Wang ◽  
Lin Hao ◽  
Miao Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Treatment ◽  
Gate Stacks ◽  
Interface Chemistry

scholarly journals Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer

RSC Advances ◽  
2019 ◽  
Vol 9 (58) ◽  
pp. 33800-33805
Author(s):  
Gang He ◽  
Die Wang ◽  
Rui Ma ◽  
Mao Liu ◽  
Jingbiao Cui
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Interface Chemistry ◽  
Mos Capacitor ◽  
Passivation Treatment ◽  
Leakage Current Mechanism ◽  
Current Mechanism

In the current manuscript, a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer has been fabricated, and its interfacial and electrical properties are compared with those of its counterparts that have not undergone passivation treatment.

scholarly journals A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14733-14745 ◽  
Author(s):  
Juan Gao ◽  
Gang He ◽  
Lin Hao ◽  
Die Wang ◽  
Lin Zhao
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Interface Chemistry ◽  
Si Substrates ◽  
Layer Deposition ◽  
Stoichiometric Ratios

Ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition were deposited on Si substrates. HfTiAlO possesses more excellent interface performance and electrical properties than HfTiO and TiAlO.

Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

2014 ◽  
Vol 2 (27) ◽  
pp. 5299-5308 ◽  
Author(s):  
Gang He ◽  
Jiangwei Liu ◽  
Hanshuang Chen ◽  
Yanmei Liu ◽  
Zhaoqi Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Gate Stacks ◽  
Electrical Measurements ◽  
Interface Control ◽  
Nitrogen Incorporation ◽  
Gaas Substrates ◽  
Optical Dielectric

Effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric function, band alignment, and electrical properties of sputtering-derived HfTiO high-kgate dielectrics on GaAs substrates have been studied by angle resolved X-ray photoemission spectroscopy (ARXPS), spectroscopy ellipsometry (SE), and electrical measurements.

Composition dependent interfacial thermal stability, band alignment and electrical properties of Hf1−xTixO2/Si gate stacks

2015 ◽  
Vol 346 ◽  
pp. 489-496 ◽  
Author(s):  
J.W. Zhang ◽  
G. He ◽  
M. Liu ◽  
H.S. Chen ◽  
Y.M. Liu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Band Alignment ◽  
Gate Stacks
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