Large photovoltaic effect with ultrahigh open-circuit voltage in relaxor-based ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 ceramics

Author(s):  
Xudong Qi ◽  
Kai Li ◽  
Enwei Sun ◽  
Bingqian Song ◽  
Da Huo ◽  
...  
2009 ◽  
Vol 64 (9-10) ◽  
pp. 632-638 ◽  
Author(s):  
Ewa Gondek ◽  
Ivan V. Kityk ◽  
Andrzej Danel

We have explored photovoltaic (PV) reponse for the pyrazoloquinoline and pyrazoloquinoxaline dyes incorporated into the poly(3-decylthiophene) (PDT) polymer matrices. The photovoltaic response correlates generally with the enhancement of the state dipole moments. Generally we have shown that enhanced state dipole moments lead to an increase of the open circuit voltage. The surrounded polymer matrix of the polythiophene enhances the ground state dipole moments and its relative changes are decreased with the increase of the particular state dipole moments. An appearance of the three-phenyl backside groups substantially diminishes the effect.


Polymers ◽  
2019 ◽  
Vol 11 (9) ◽  
pp. 1461 ◽  
Author(s):  
Jianfeng Li ◽  
Yufei Wang ◽  
Ningning Wang ◽  
Zezhou Liang ◽  
Xu Wang ◽  
...  

A novel (E)-5-(2-(5-alkylthiothiophen-2-yl)vinyl)thien-2-yl (TVT)-comprising benzo[1,2-b:4,5-b’]dithiophene (BDT) derivative (BDT-TVT) was designed and synthetized to compose two donor-acceptor (D-A) typed copolymers (PBDT-TVT-ID and PBDT-TVT-DTNT) with the electron-withdrawing unit isoindigo (ID) and naphtho[1,2-c:5,6-c′]bis[1,2,5]thiadiazole (NT), respectively. PBDT-TVT-ID and PBDT-TVT-DTNT showed good thermal stability (360 °C), an absorption spectrum from 300 nm to 760 nm and a relatively low lying energy level of Highest Occupied Molecular Orbital (EHOMO) (−5.36 to –5.45 eV), which could obtain a large open-circuit voltage (Voc) from photovoltaic devices with PBDT-TVT-ID or PBDT-TVT-DTNT. The photovoltaic devices with ITO/PFN/polymers: PC71BM/MoO3/Ag structure were assembled and exhibited a good photovoltaic performance with a power conversion efficiency (PCE) of 4.09% (PBDT-TVT-ID) and 5.44% (PBDT-TVT-DTNT), respectively. The best PCE of a PBDT-TVT-DTNT/PC71BM-based device mainly originated from its wider absorption, higher hole mobility and favorable photoactive layer morphology.


2015 ◽  
Vol 08 (01) ◽  
pp. 1550002 ◽  
Author(s):  
Zeng-Wei Peng ◽  
Ying-Long Wang ◽  
Bao-Ting Liu

Photovoltaic (PV) effect of polycrystalline Bi 0.975 La 0.025 Fe 0.975 Ni 0.025 O 3 (BLFNO) film grown on Pt (111)/ Ti/SiO 2/ Si (001) substrate using sol–gel method has been investigated. The BLFNO film possesses good ferroelectric property and large twice-remanent polarization. It is found that PV response exhibited a strong dependence on the potential of top indium tin oxide (ITO) and bottom Pt electrode. The open circuit voltage is -0.67 V when the potential of ITO electrode is higher than that of Pt electrode and 0.45 V when the potential of ITO electrode is lower than that of Pt electrode. This can be interpreted by the variation of barrier heights at both ITO/BLFNO and BLFNO/ Pt interfaces.


2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Shigeru Yamada ◽  
Shinsuke Miyajima ◽  
Makoto Konagai

A fabrication process for silicon/silicon dioxide (Si/SiO2) superlattice microwire array solar cells was developed. The Si/SiO2 superlattice microwire array was fabricated using a microsphere lithography process with polystyrene particles. The solar cell shows a photovoltaic effect and an open-circuit voltage of 128 mV was obtained. The limiting factors of the solar cell performance were investigated from the careful observations of the solar cell structures. We also investigated the influence of the microwire array structure on light trapping in the solar cells.


Author(s):  
М.А. Минтаиров ◽  
В.В. Евстропов ◽  
С.А. Минтаиров ◽  
М.З. Шварц ◽  
Н.А. Калюжный

An anomaly arising in photovoltaic characteristics at ultra-high concentrations (more than 2000 suns) in triple-junction GaInP/GaAs/Ge and in the double-junction GaInP/GaAs solar cells has been studied. The light IV-curves at different sun concentrations and dependence of open circuit voltage on photogenerated current have been analyzed. It is shown that the anomaly is caused by the photovoltaic effect source, counteracting the subcells. The reason for this effect – absorption of photons intended for GaAs subcell in the tunnel diode located between GaInP and GaAs sub-cells.


2005 ◽  
Vol 865 ◽  
Author(s):  
S.I. Drapak ◽  
M.O. Vorobets ◽  
Z.D. Kovalyuk

AbstractThe influence of mechanical pressure along the direction across the interface of n-InSe-p-GaSe heterojunctions on saturation photo-e.m.f. and short-circuit current is investigated. It is shown that at the InSe/GaSe optical contacts subjected to a pressure P = 35-40 kPa an increase of the open-circuit voltage nearly twice and short-circuit current more than by a factor of five in comparison to the initial samples takes place. It makes possible to predict a possibility of considerable increasing photoconversion efficiency of such structures.


1985 ◽  
Vol 54 ◽  
Author(s):  
Jerng-Sik Song ◽  
Edward S. Yang

ABSTRACTExperimental observation of the photovoltaic effect of a semiconductor grain boundary with a scanning laser beam is analyzed assuming a single trap energy level. The photo-current is calculated from the recombination velocity and the concentration of minority carriers at a grain boundary which was derived from the continuity equation. Open circuit voltage across a sample is obtained from equating this recombination current to compensating thermionic emission current. Using recombination velocity and diffusion length as variables, tha calculated open circuit voltage is compared with experimental data.


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