Ultralow oxygen ion diffusivity in pyrochlore-type La2(Zr0.7Ce0.3)2O7

2022 ◽  
Vol 102 ◽  
pp. 174-185
Author(s):  
Junwei Che ◽  
Xiangyang Liu ◽  
Xuezhi Wang ◽  
Quan Zhang ◽  
Erhu Zhang ◽  
...  
Keyword(s):  
Oxygen Ion ◽  
Pyrochlore Type

scholarly journals Cation size effects in oxygen ion dynamics of highly disordered pyrochlore-type ionic conductors

2008 ◽  
Vol 78 (10) ◽  
Author(s):  
M. R. Díaz-Guillén ◽  
K. J. Moreno ◽  
J. A. Díaz-Guillén ◽  
A. F. Fuentes ◽  
K. L. Ngai ◽  
...  
Keyword(s):  
Size Effects ◽  
Ion Dynamics ◽  
Ionic Conductors ◽  
Oxygen Ion ◽  
Pyrochlore Type ◽  
Cation Size

Cations size mismatch versus bonding characteristics: synthesis, structure and oxygen ion conducting properties of pyrochlore-type lanthanide hafnates

2018 ◽  
Vol 53 (19) ◽  
pp. 13513-13529 ◽  
Author(s):  
Nayeli M. Cepeda-Sánchez ◽  
José A. Díaz-Guillén ◽  
Miroslaw Maczka ◽  
Ulises Amador ◽  
Antonio F. Fuentes
Keyword(s):  
Size Mismatch ◽  
Oxygen Ion ◽  
Pyrochlore Type ◽  
Ion Conducting ◽  
Bonding Characteristics

Oxygen ion dynamics in pyrochlore-type ionic conductors: Effects of structure and ion–ion cooperativity

2015 ◽  
Vol 407 ◽  
pp. 349-354 ◽  
Author(s):  
M.A. Frechero ◽  
O.J. Durá ◽  
M.R. Díaz-Guillén ◽  
K.J. Moreno ◽  
J.A. Díaz-Guillén ◽  
...  
Keyword(s):  
Ion Dynamics ◽  
Ionic Conductors ◽  
Oxygen Ion ◽  
Pyrochlore Type

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Study of Natural Minerals of U-Ryrochlore-Type Structure as Analogues of Plutonium Ceramic Waste-form

2002 ◽  
Vol 713 ◽  
Author(s):  
Roman V. Bogdanov ◽  
Yuri F. Batrakov ◽  
Elena V. Puchkova ◽  
Andrey S. Sergeev ◽  
Boris E. Burakov
Keyword(s):  
Chemical Shifts ◽  
Pyrochlore Structure ◽  
Type Structure ◽  
Waste Form ◽  
X Ray ◽  
Ceramic Waste ◽  
Natural Minerals ◽  
The Us ◽  
Pyrochlore Type

ABSTRACTAt present, crystalline ceramic based on titanate pyrochlore, (Ca,Gd,Hf,Pu,U)2Ti2O7, is considered as the US candidate waste form for the immobilization of weapons grade plutonium. Naturally occuring U-bearing minerals with pyrochlore-type structure: hatchettolite, betafite, and ellsworthite, were studied in orders to understand long-term radiation damage effects in Pu ceramic waste forms. Chemical shifts (δ) of U(Lδ1)– and U(Lβ1) – X-ray emission lines were measured by X-ray spectrometry. Calculations were performed on the basis of a two-dimensional δLá1- and δLδ1- correlation diagram. It was shown that 100% of uranium in hatchettolite and, probably, 95-100% of uranium in betafite are in the form of (UO2)2+. formal calculation shows that in ellsworthite only 20% of uranium is in the form of U4+ and 80% of the rest is in the forms of U5+ and U6+. The conversion of the initial U4+ ion originally occurring in the pyrochlore structure of natural minerals to (UO2)2+ due to metamict decay causes a significant increase in uranium mobility.

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

Dielectric performance of pyrochlore-type Bi2MgNb2-xTaxO9 ceramics: the effects of tantalum doping

2021 ◽  
Author(s):  
N.A. Zhuk ◽  
M.G. Krzhizhanovskaya ◽  
N.A. Sekushin ◽  
V.V. Kharton ◽  
B.A. Makeev ◽  
...  
Keyword(s):  
Dielectric Performance ◽  
Pyrochlore Type

scholarly journals Fast oxygen ion migration in Cu–In–oxide bulk and its utilization for effective CO2 conversion at lower temperature

2021 ◽  
Author(s):  
Jun-Ichiro Makiura ◽  
Takuma Higo ◽  
Yutaro Kurosawa ◽  
Kota Murakami ◽  
Shuhei Ogo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Water Gas Shift ◽  
Chemical Looping ◽  
Co2 Conversion ◽  
Ion Migration ◽  
Oxygen Ion ◽  
Reverse Water Gas Shift ◽  
Oxygen Ion Migration ◽  
Lower Temperature ◽  
Water Gas

Efficient activation of CO2 at low temperature was achieved by reverse water–gas shift via chemical looping (RWGS-CL) by virtue of fast oxygen ion migration in a Cu–In structured oxide, even at lower temperatures.

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