Phenomenology of electrical switching behavior of SeTeSnCd thin films for memory applications

2021 ◽  
Vol 571 ◽  
pp. 121025
Author(s):  
S.S. Fouad ◽  
H.E. Atyia ◽  
A.E. Bekheet ◽  
Amit Kumar ◽  
N. Mehta
Keyword(s):  
Thin Films ◽  
Switching Behavior ◽  
Electrical Switching ◽  
Memory Applications

A Comparative Study of Electrical Switching Behavior of Certain Tellurium Based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications

2010 ◽  
Vol 123-125 ◽  
pp. 1207-1210
Author(s):  
Chandasree Das ◽  
G. Mohan Rao ◽  
S. Asokan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Switching Behavior ◽  
Flash Evaporation ◽  
Electron Microscopic ◽  
Electrical Switching ◽  
Memory Switching ◽  
Three Samples ◽  
Electron Microscopic Image ◽  
The Difference

This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.

Studies on electrical switching behavior and optical band gap of amorphous Ge–Te–Sn thin films

2011 ◽  
Vol 106 (4) ◽  
pp. 989-994 ◽  
Author(s):  
Chandasree Das ◽  
M. G. Mahesha ◽  
G. Mohan Rao ◽  
S. Asokan
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Switching Behavior ◽  
Electrical Switching

Turning electrical switching behaviors in WOx thin films by thickness

2019 ◽  
Vol 12 (01) ◽  
pp. 1850107
Author(s):  
Weijie Duan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Dynamic Evolution ◽  
Behavior Changes ◽  
Electrical Switching ◽  
Threshold Switching ◽  
Highly Sensitive

The tunability of electrical switching behaviors in WOx thin films were investigated in this paper. Electrical responses of the WOx films were observed to be highly sensitive to the film thickness. As the film thickness increases from 50 to 100[Formula: see text]nm, the switching behavior changes from complementary resistive switching (CRS) to threshold switching (TS). A defect-related dynamic evolution of filament is responsible for the switching behavior. Such a controllable electrical switching can well broaden the application of the WOx thin film.

Bistable electrical switching and nonvolatile memory effect in carbon nanotube–poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) composite films

2015 ◽  
Vol 17 (26) ◽  
pp. 17150-17158 ◽  
Author(s):  
Yanmei Sun ◽  
Lei Li ◽  
Dianzhong Wen ◽  
Xuduo Bai ◽  
Gang Li
Keyword(s):  
Thin Films ◽  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Nonvolatile Memory ◽  
Composite Films ◽  
Electrical Conductance ◽  
Switching Behavior ◽  
Single Wall Carbon Nanotubes ◽  
Electrical Switching ◽  
Conductance Switching

The electrical conductance switching behavior and nonvolatile memory effects in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) PEDOT:PSS and single-wall carbon nanotubes (SWCNTs) composite thin films have been investigated.

scholarly journals 7-Alkoxy-appended coumarin derivatives: synthesis, photo-physical properties, aggregation behaviours and current–voltage (I–V) characteristic studies on thin films

RSC Advances ◽  
2021 ◽  
Vol 11 (17) ◽  
pp. 10212-10223
Author(s):  
Abhijit Rudra Paul ◽  
Bapi Dey ◽  
Sudip Suklabaidya ◽  
Syed Arshad Hussain ◽  
Swapan Majumdar
Keyword(s):  
Thin Films ◽  
Carboxylic Acid ◽  
Physical Properties ◽  
Chemical Characteristics ◽  
Coumarin Derivatives ◽  
Design Synthesis ◽  
Electrical Switching ◽  
Physico Chemical ◽  
Current Voltage

In this article, we demonstrate the design, synthesis and physico-chemical characteristics, including electrical switching behaviours of long alkoxy-appended coumarin carboxylate/carboxylic acid in thin films.

Dependence of Ferroelectric Properties of SBT Based Capacitors on the Electrode Material

1998 ◽  
Vol 541 ◽  
Author(s):  
S. Tirumala ◽  
S. O. Ryu ◽  
K. B. Lee ◽  
R. Vedula ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrode Material ◽  
Electrode Materials ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Sputter Deposited ◽  
Memory Applications

AbstractThe effect of various electrode materials on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films has been investigated for non-volatile memory applications. Two sets of electrode structures, viz., Pt-Ir based and Pt-Rh based, were sputter deposited in-situ on Si substrates. SBT thin films were deposited on these electrodes using a metal-organic solution deposition technique followed by a post-deposition anneal at 750 °C in oxygen. Structural characterization revealed a polycrystalline nature with predominant perovskite phase in SBT thin films. Ferroelectric properties were studied in capacitor mode by depositing top electrodes, where the top electrode material is identical to that of the bottom electrode. Extensive analysis of the ferroelectric properties signify the important role played by the electrode material in establishing the device applicability is reported in this work.

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