scholarly journals Structural changes induced by heavy ion irradiation in titanium silicon carbide

2011 ◽  
Vol 409 (1) ◽  
pp. 53-61 ◽  
Author(s):  
J.C. Nappé ◽  
I. Monnet ◽  
Ph. Grosseau ◽  
F. Audubert ◽  
B. Guilhot ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Structural Changes ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Titanium Silicon Carbide ◽  
Heavy Ion Irradiation ◽  
Titanium Silicon

Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET

2021 ◽  
pp. 1-11
Author(s):  
Xiaowen Liang ◽  
Jinghao Zhao ◽  
Qiwen Zheng ◽  
JiangWei Cui ◽  
Sheng Yang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Power Mosfet ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

scholarly journals Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Oliver Ochedowski ◽  
Orkhan Osmani ◽  
Martin Schade ◽  
Benedict Kleine Bussmann ◽  
Brigitte Ban-d’Etat ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion

Swift heavy ion irradiation of Pt nanocrystals: II. Structural changes and H desorption

2011 ◽  
Vol 44 (15) ◽  
pp. 155402 ◽  
Author(s):  
R Giulian ◽  
L L Araujo ◽  
P Kluth ◽  
D J Sprouster ◽  
C S Schnohr ◽  
...  
Keyword(s):  
Structural Changes ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Pt Nanocrystals

Comparative study of the effect of swift heavy ion irradiation at 500 °C and annealing at 500 °C on implanted silicon carbide

RSC Advances ◽  
2016 ◽  
Vol 6 (73) ◽  
pp. 68593-68598 ◽  
Author(s):  
T. T. Hlatshwayo ◽  
J. H. O'Connell ◽  
V. A. Skuratov ◽  
E. Wendler ◽  
E. G. Njoroge ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Comparative Study ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion

TEM, RS and RBS were used to characterize polycrystalline SiC specimens individually implanted with 360 keV I+ or Kr+ ions at room temperature and thereafter either irradiated with 167 MeV Xe to a fluence of 5 × 1013 cm−2 at 500 °C or annealed at 500 °C under vacuum.

Sound velocity of glassy Pd 80 Si 20 after heavy-ion irradiation at low temperatures

2002 ◽  
Vol 82 (11) ◽  
pp. 2333-2339
Author(s):  
G. Schumacher ◽  
R. C. Birtcher ◽  
D. P. Renusch ◽  
M. Grimsditch ◽  
L. E. Rehn
Keyword(s):  
Sound Velocity ◽  
Low Temperatures ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Heavy Ion Irradiation

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability
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