Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET

The leakage currents through the gate oxide of MOS capacitors fabricated on n-type 4H-Silicon Carbide (SiC) was measured under accumulation bias conditions with heavy-ion irradiation. The Linear Energy Transfer (LET) dependence of the critical electric field (Ecr) at which dielectric breakdown occurred in these capacitors with two different oxide thicknesses was evaluated. The MOS capacitors with thin gate oxide showed higherEcrvalues than those with thick gate oxide. The linear relationship between the reciprocalEcrandLETwas observed for both MOS capacitors. The slope ofLETdependence of 1/Ecrfor SiC MOS capacitors was smaller than that for Si, suggesting that SiC MOS devices are less susceptible to single-event gate rupture (SEGR) than Si MOS devices.

Download Full-text

Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation

Nature Communications ◽

10.1038/ncomms4913 ◽

2014 ◽

Vol 5 (1) ◽

Cited By ~ 35

Author(s):

Oliver Ochedowski ◽

Orkhan Osmani ◽

Martin Schade ◽

Benedict Kleine Bussmann ◽

Brigitte Ban-d’Etat ◽

...

Keyword(s):

Silicon Carbide ◽

Ion Irradiation ◽

Heavy Ion ◽

Swift Heavy Ion Irradiation ◽

Heavy Ion Irradiation ◽

Swift Heavy Ion

Download Full-text

Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2007.910873 ◽

2007 ◽

Vol 54 (6) ◽

pp. 2181-2189 ◽

Cited By ~ 48

Author(s):

James A. Felix ◽

Marty R. Shaneyfelt ◽

James R. Schwank ◽

Scott M. Dalton ◽

Paul E. Dodd ◽

...

Keyword(s):

Ion Irradiation ◽

Heavy Ion ◽

Power Mosfet ◽

Heavy Ion Irradiation ◽

Enhanced Degradation

Download Full-text

Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.673 ◽

2015 ◽

Vol 821-823 ◽

pp. 673-676 ◽

Cited By ~ 1

Author(s):

Manato Deki ◽

Takahiro Makino ◽

Kazutoshi Kojima ◽

Takuro Tomita ◽

Takeshi Ohshima

Keyword(s):

Silicon Carbide ◽

Energy Transfer ◽

Oxide Film ◽

Electric Field ◽

Ion Irradiation ◽

Source Region ◽

Gate Oxide ◽

Heavy Ion ◽

Mos Capacitors ◽

Oxide Breakdown

The critical electric field (Ecr) of the gate oxide in 4H-Silicon Carbide (SiC) MOSFETs was measured under inversion bias conditions with ion irradiation. The Linear Energy Transfer (LET) dependence of theEcrat which the gate oxide breakdown occurred in these MOSFETs was evaluated. The linear relationship between theEcr-1andLETwas observed for SiC MOSFETs. The slope of theLET-1/Ecrfor SiC MOSFETs is almost the same that of theLET-1/Ecrlines for SiC MOS capacitors. TheVdsdependence ofEcrwas also evaluated. The correlation between the direction of electric field of drain-source region and direction of ion incidence affects to instability ofEcr.

Download Full-text

Comparative study of the effect of swift heavy ion irradiation at 500 °C and annealing at 500 °C on implanted silicon carbide

RSC Advances ◽

10.1039/c6ra13592g ◽

2016 ◽

Vol 6 (73) ◽

pp. 68593-68598 ◽

Cited By ~ 5

Author(s):

T. T. Hlatshwayo ◽

J. H. O'Connell ◽

V. A. Skuratov ◽

E. Wendler ◽

E. G. Njoroge ◽

...

Keyword(s):

Silicon Carbide ◽

Comparative Study ◽

Room Temperature ◽

Ion Irradiation ◽

Heavy Ion ◽

Swift Heavy Ion Irradiation ◽

Heavy Ion Irradiation ◽

Swift Heavy Ion

TEM, RS and RBS were used to characterize polycrystalline SiC specimens individually implanted with 360 keV I+ or Kr+ ions at room temperature and thereafter either irradiated with 167 MeV Xe to a fluence of 5 × 1013 cm−2 at 500 °C or annealed at 500 °C under vacuum.

Download Full-text