Characterization of high energy Xe ion irradiation effects in single crystal molybdenum with depth-resolved synchrotron microbeam diffraction

High-energy implantation of silicon is of great interest in recent years for microelectronics due to the formation of a buried damage or dopant layer away from the active region of the device. The damage nucleation and growth behavior is known to vary significantly along the ion's track for MeV irradiation. In this paper, a detailed characterization of the damage morphology produced by MeV gold ions for different doses into single crystal Si, as well as the associated annealing behavior, is presented.Single crystal n-type Czochralski silicon {001} wafers were implanted with Au++ ions from doses of 1x1015 to 3x1016 cm-2 at 2-3 MeV. Specimen temperatures for all implantations were 20 or 300°C. A measurement with an infrared pyrometer of the implanted surface indicated a slight temperature rise during ion irradiation. The compositional and damage profiles were determined by Rutherford backscattering/channeling spectroscopy (RBS). Cross-sectional TEM samples for microstructural characterization were prepared by mechanical polishing and ion milling. A Philips 400ST/FEG analytical microscope was used for nanoprobe experiments, at 100 kV. Microstructural investigation was performed using ISI-002B and JEM-2000FX microscopes, at 200 kV.

Download Full-text

High energy ion irradiation effects on polymer materials–Changes in mechanical properties of PE, PSF and PES

Polymer ◽

10.1016/s0032-3861(98)00725-3 ◽

1999 ◽

Vol 40 (18) ◽

pp. 5095-5102 ◽

Cited By ~ 24

Author(s):

Tsuneo Sasuga ◽

Hisaaki Kudoh ◽

Tadao Seguchi

Keyword(s):

Mechanical Properties ◽

Ion Irradiation ◽

High Energy ◽

Polymer Materials ◽

Irradiation Effects

Download Full-text

Characterization of a single crystal diamond pixel detector in a high energy particle beam

Journal of Instrumentation ◽

10.1088/1748-0221/3/12/p12002 ◽

2008 ◽

Vol 3 (12) ◽

pp. P12002-P12002 ◽

Cited By ~ 5

Author(s):

M Mathes ◽

M Cristinziani ◽

H Kagan ◽

S Smith ◽

W Trischuk ◽

...

Keyword(s):

Single Crystal ◽

Particle Beam ◽

High Energy ◽

High Energy Particle ◽

Pixel Detector ◽

Energy Particle ◽

Single Crystal Diamond

Download Full-text

High energy ion irradiation effects on polymer material: 4. Heavier ion irradiation effects on mechanical properties of PE and PTFE

Polymer ◽

10.1016/0032-3861(96)00193-0 ◽

1996 ◽

Vol 37 (16) ◽

pp. 3737-3739 ◽

Cited By ~ 13

Author(s):

H. Kudoh ◽

T. Sasuga ◽

T. Seguchi ◽

Y. Katsumura

Keyword(s):

Mechanical Properties ◽

Polymer Material ◽

Ion Irradiation ◽

High Energy ◽

Irradiation Effects

Download Full-text

High Energy Heavy Ion Irradiation Effects on Electron Transport Property in La2-xSrxCuO4

Laser and Ion Beam Modification of Materials ◽

10.1016/b978-0-444-81994-9.50081-6 ◽

1994 ◽

pp. 383-386 ◽

Cited By ~ 1

Author(s):

M. Terasawa ◽

T. Mitamura ◽

T. Kohara ◽

K. Ueda ◽

H. Tsubakino ◽

...

Keyword(s):

Electron Transport ◽

Transport Property ◽

Ion Irradiation ◽

Heavy Ion ◽

High Energy ◽

Irradiation Effects ◽

Heavy Ion Irradiation ◽

Electron Transport Property

Download Full-text

Three-Dimensional Lithography for Rutile TiO2 Single Crystals using Swift Heavy Ions

MRS Proceedings ◽

10.1557/proc-797-w3.6 ◽

2003 ◽

Vol 797 ◽

Author(s):

Koichi Awazu ◽

Makoto Fujimaki ◽

Yoshimichi Ohki ◽

Tetsuro Komatsubara

Keyword(s):

Single Crystal ◽

Hydrofluoric Acid ◽

Ion Irradiation ◽

Three Dimensional ◽

Heavy Ion ◽

High Energy ◽

Stopping Power ◽

A Value ◽

Microscopy Measurement ◽

Electronic Stopping Power

ABSTRACTWe have developed a nano-micro structure fabrication method in rutile TiO2 single crystal by use of swift heavy-ion irradiation. The area where ions heavier than Cl ion accelerated with MeV-order high energy were irradiated was well etched by hydrofluoric acid, by comparison etching was not observed in the pristine TiO2 single crystal. Noticed that the irradiated area could be etched to a depth at which the electronic stopping power of the ion decayed to a value of 6.2keV/nm. We also found that the value of the electronic stopping power was increased, eventually decreased against depth in TiO2 single crystal with, e.g. 84.5MeV Ca ion. Using such a beam, inside of TiO2 single crystal was selectively etched with 20% hydrofluoric acid, while the top surface of TiO2 single crystal subjected to irradiation was not etched. Roughness of the new surface created in the single crystal was within 7nm with the atomic forth microscopy measurement.

Download Full-text