Microstructure of silicon implanted with MeV gold ions

1991 ◽  
Vol 49 ◽  
pp. 876-877
Author(s):  
M.J. Kim ◽  
M. Catalano ◽  
T.P. Sjoreen ◽  
R.W. Carpenter
Keyword(s):  
Single Crystal ◽  
Ion Irradiation ◽  
Microstructural Characterization ◽  
High Energy ◽  
Ion Milling ◽  
Cross Sectional ◽  
Microstructural Investigation ◽  
Annealing Behavior ◽  
Different Doses

High-energy implantation of silicon is of great interest in recent years for microelectronics due to the formation of a buried damage or dopant layer away from the active region of the device. The damage nucleation and growth behavior is known to vary significantly along the ion's track for MeV irradiation. In this paper, a detailed characterization of the damage morphology produced by MeV gold ions for different doses into single crystal Si, as well as the associated annealing behavior, is presented.Single crystal n-type Czochralski silicon {001} wafers were implanted with Au++ ions from doses of 1x1015 to 3x1016 cm-2 at 2-3 MeV. Specimen temperatures for all implantations were 20 or 300°C. A measurement with an infrared pyrometer of the implanted surface indicated a slight temperature rise during ion irradiation. The compositional and damage profiles were determined by Rutherford backscattering/channeling spectroscopy (RBS). Cross-sectional TEM samples for microstructural characterization were prepared by mechanical polishing and ion milling. A Philips 400ST/FEG analytical microscope was used for nanoprobe experiments, at 100 kV. Microstructural investigation was performed using ISI-002B and JEM-2000FX microscopes, at 200 kV.

Microstructural characterization of InGaAs/GaAs quantum wells grown at low substrate temperatures

1991 ◽  
Vol 49 ◽  
pp. 846-847
Author(s):  
C.M. Sung ◽  
B. Elman ◽  
K.J. Ostreicher ◽  
J. Hefter ◽  
Emil S. Koteles
Keyword(s):  
Quantum Wells ◽  
Microstructural Characterization ◽  
High Energy ◽  
Ion Milling ◽  
Cross Sectional ◽  
Usual Manner ◽  
Optical And Electronic Properties ◽  
Pseudomorphic Growth ◽  
Substrate Temperatures

The composition and thickness of InxGa1-xAs/GaAs quantum wells play an important role in the determination of their optical and electronic properties. InxGa1-xAs/GaAs single quantum wells (SQWs) grown at low substrate temperatures with various In compositions (x) and well thicknesses were investigated by reflected high energy electron diffraction (RHEED) and photoluminescence (PL) techniques to determine when the critical thickness for pseudomorphic growth was exceeded. Cross-sectional TEM methods were employed to directly determine the critical layer thickness of InGaAs on GaAs and the presence of the dislocations generated in these layers.The samples were grown by MBE on semi-insulating (100) GaAs substrates at substrate temperatures of 410°C and 460°C. They consisted of undoped SQWs and barriers in which the well width was varied from 1 nm to 22 nm. The In composition in the well layers was varied from 0.3 to 0.5. The growth rates and In compositions were deduced from RHEED intensity oscillation measurements . Cross-sectional specimens for TEM studies were prepared in the usual manner, by mechanical thinning followed by Ar+ ion milling. A Philips EM400T operated at 120 keV was used to observe the specimens.

Microanalysis of high-dose oxygen-implanted germanium

1991 ◽  
Vol 49 ◽  
pp. 866-867
Author(s):  
M.J. Kim ◽  
Q. Zhang ◽  
K. Das Chowdhury ◽  
R.W. Carpenter ◽  
J.C. Kelly
Keyword(s):  
Ion Implantation ◽  
High Speed ◽  
Structural Changes ◽  
Rutherford Backscattering Spectrometry ◽  
Microstructural Characterization ◽  
High Dose ◽  
Ion Milling ◽  
Cross Sectional ◽  
Microstructural Investigation ◽  
Implantation Temperature

High-dose ion implantation is being increasingly used to produce buried oxide layers in silicon for high speed CMOS and VLSI applications. Ion implantation into germanium has been used to control optical properties. Germanium implanted with high dose oxygen is a promising material for photodetectors and solar energy converters. In the present study the structural changes in germanium caused by high dose oxygen implantation, giving low reflectivity in the far-UV and visible, were characterized by HREM and high spatial resolution AEM.The single crystal n-type germanium {111} wafers were implanted with O+ ions to doses of lx1017 to 1.5xl018 cm-2 at 45 keV. The implantation temperature was estimated to be about 400°C. The absorption behavior of the implanted samples was measured by Infrared (IR) spectroscopy. The compositional profiles of implanted layers were obtained by Rutherford Backscattering Spectrometry (RBS) and position-resolved EELS. Cross-sectional TEM samples for microstructural characterization were prepared by mechanical polishing and ion milling. A Philips 400ST/FEG analytical microscope was used for nanoprobe experiments, at 100 kV. Microstructural investigation was performed using ISI-002B and JEM-2000FX microscopes, at 200 kV.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

scholarly journals Development and characterization of Nb3Sn/Al2O3 superconducting multilayers for particle accelerators

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chris Sundahl ◽  
Junki Makita ◽  
Paul B. Welander ◽  
Yi-Feng Su ◽  
Fumitake Kametani ◽  
...  
Keyword(s):  
High Performance ◽  
High Energy ◽  
Particle Accelerators ◽  
Quality Factors ◽  
Critical Fields ◽  
Linear Accelerators ◽  
Cross Sectional ◽  
Low Field ◽  
Superconducting Radio Frequency

AbstractSuperconducting radio-frequency (SRF) resonator cavities provide extremely high quality factors > 1010 at 1–2 GHz and 2 K in large linear accelerators of high-energy particles. The maximum accelerating field of SRF cavities is limited by penetration of vortices into the superconductor. Present state-of-the-art Nb cavities can withstand up to 50 MV/m accelerating gradients and magnetic fields of 200–240 mT which destroy the low-dissipative Meissner state. Achieving higher accelerating gradients requires superconductors with higher thermodynamic critical fields, of which Nb3Sn has emerged as a leading material for the next generation accelerators. To overcome the problem of low vortex penetration field in Nb3Sn, it has been proposed to coat Nb cavities with thin film Nb3Sn multilayers with dielectric interlayers. Here, we report the growth and multi-technique characterization of stoichiometric Nb3Sn/Al2O3 multilayers with good superconducting and RF properties. We developed an adsorption-controlled growth process by co-sputtering Nb and Sn at high temperatures with a high overpressure of Sn. The cross-sectional scanning electron transmission microscope images show no interdiffusion between Al2O3 and Nb3Sn. Low-field RF measurements suggest that our multilayers have quality factor comparable with cavity-grade Nb at 4.2 K. These results provide a materials platform for the development and optimization of high-performance SIS multilayers which could overcome the intrinsic limits of the Nb cavity technology.

scholarly journals Processing and microstructural characterization of a Ti-Cr-Nb alloy synthesized by high-energy ball-milling

2012 ◽  
Vol 15 (5) ◽  
pp. 753-756 ◽  
Author(s):  
José Fernando Ribeiro de Castro ◽  
Sydney Ferreira Santos ◽  
Tomaz Ishikawa ◽  
Walter José Botta
Keyword(s):  
Ball Milling ◽  
Microstructural Characterization ◽  
High Energy ◽  
High Energy Ball Milling ◽  
Energy Ball

scholarly journals Microstructural characterization of catalysis product of nanocement based materials: A review

2018 ◽  
Vol 34 ◽  
pp. 01039
Author(s):  
Norsuzailina Mohamed Sutan ◽  
Nur Izaitul Akma Ideris ◽  
Siti Noor Linda Taib ◽  
Delsye Teo Ching Lee ◽  
Alsidqi Hassan ◽  
...  
Keyword(s):  
Carbon Dioxide Emission ◽  
Essential Element ◽  
Microstructural Characterization ◽  
High Energy ◽  
Green Technology ◽  
Microstructural Development ◽  
Cement Replacement ◽  
Alternative Materials ◽  
Partial Cement Replacement

Cement as an essential element for cement-based products contributed to negative environmental issues due to its high energy consumption and carbon dioxide emission during its production. These issues create the need to find alternative materials as partial cement replacement where studies on the potential of utilizing silica based materials as partial cement replacement come into picture. This review highlights the effectiveness of microstructural characterization techniques that have been used in the studies that focus on characterization of calcium hydroxide (CH) and calcium silicate hydrate (C-S-H) formation during hydration process of cement-based product incorporating nano reactive silica based materials as partial cement replacement. Understanding the effect of these materials as cement replacement in cement based product focusing on the microstructural development will lead to a higher confidence in the use of industrial waste as a new non-conventional material in construction industry that can catalyse rapid and innovative advances in green technology.

scholarly journals Characterization of a single crystal diamond pixel detector in a high energy particle beam

2008 ◽  
Vol 3 (12) ◽  
pp. P12002-P12002 ◽  
Author(s):  
M Mathes ◽  
M Cristinziani ◽  
H Kagan ◽  
S Smith ◽  
W Trischuk ◽  
...  
Keyword(s):  
Single Crystal ◽  
Particle Beam ◽  
High Energy ◽  
High Energy Particle ◽  
Pixel Detector ◽  
Energy Particle ◽  
Single Crystal Diamond
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