The evolution law of δ phase of IN718 superalloy in temperature/stress coupled field

2021 ◽  
pp. 111684
Author(s):  
Hanzhong Deng ◽  
Lei Wang ◽  
Yang Liu ◽  
Xiu Song ◽  
Fanqiang Meng ◽  
...  
Author(s):  
L. A. Giannuzzi ◽  
A. S. Ramani ◽  
P. R. Howell ◽  
H. W. Pickering ◽  
W. R. Bitler

The δ phase is a Zn-rich intermetallic, having a composition range of ∼ 86.5 - 92.0 atomic percent Zn, and is stable up to 665°C. The stoichiometry of the δ phase has been reported as FeZn7 and FeZn10 The deviation in stoichiometry can be attributed to variations in alloy composition used by each investigator. The structure of the δ phase, as determined by powder x-ray diffraction, is hexagonal (P63mc or P63/mmc) with cell dimensions a = 1.28 nm, c = 5.76 nm, and 555±8 atoms per unit cell. Later work suggested that the layer produced by hot-dip galvanizing should be considered as two distinct phases which are characterized by their morphological differences, namely: the iron-rich region with a compact appearance (δk) and the zinc-rich region with a columnar or palisade microstructure (δp). The sub-division of the δ phase was also based on differences in diffusion behavior, and a concentration discontinuity across the δp/δk boundary. However, work utilizing Weisenberg photographs on δ single crystals reported that the variation in lattice parameters with composition was small and hence, structurally, the δk phase and the δp phase were the same and should be thought of as a single phase, δ. Bastin et al. determined the average cell dimensions to be a = 1.28 nm and c = 5.71 nm, and suggested that perhaps some kind of ordering process, which would not be observed by x-ray diffraction, may be responsible for the morphological differences within the δ phase.


Author(s):  
Hayette Faid

AbstractIn this work, Zn-Ni alloys have been deposited on steel from sulfate bath, by electrodeposition method. The effect of Zn content on deposits properties was studied by cyclic voltammetry (CV), chronoaperometry (CA), linear stripping voltammetry (ALSV) and diffraction (XRD) and scanning electronic microscopy (SEM). The corrosion behavior in 3.5 wt. NaCl solution was examined using anodic polarization test and electrochemical impedance spectroscopy. X-ray diffraction of show that Zn-Ni alloys structure is composed of δ phase and γ phase, which increase with the decrease of Zn content in deposits. Results show that deposits obtained from bath less Zn2+ concentration exhibited better corrosion resistance.


2020 ◽  
Vol 53 (2) ◽  
Author(s):  
Khalil Ahmed Laghari ◽  
Abdul Jabbar Pirzada ◽  
Mahboob Ali Sial ◽  
Muhammad Athar Khan ◽  
Jamal Uddin Mangi

2020 ◽  
Vol 52 (5) ◽  
Author(s):  
De-Gong Wu ◽  
Qiu-Wen Zhan ◽  
Hai-Bing Yu ◽  
Bao-Hong Huang ◽  
Xin-Xin Cheng ◽  
...  

2018 ◽  
Author(s):  
Jungsuk Ko ◽  
Hoonchang yang ◽  
Hyungchae Jeon ◽  
Gyuyoung Nam ◽  
Youngseok Ryu ◽  
...  

Abstract The necessity of hot temperature stress is widely recognized as the initial stress methodology to maintain the stability of products from infant defects in device [1, 2]. However, hot temperature stress has a disadvantage in terms of stress uniformity because temperature variation according to stress environment such as chamber, board, and tester accelerates different stress effects per chips. In addition, this stress condition can cause serious reliability problem in the mass production environments. Therefore, the stress temperature should be lowered to minimize the temperature deviation due to the production environments. The reduction of stress temperature cause the lack of stress amount, so optimized stress voltage and time to maintain the stress condition is required. In this study, various stress voltage and time with decreasing temperature were evaluated in consideration of lifetime that unit elements such transistors and capacitors did not degrade by any stress conditions. In addition, it was confirmed that stress uniformity can be improved in the stress condition obtained by the evaluation. Furthermore, the enhanced initial failure screen ability was proven with mass evaluations.


Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.


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