Low cost CuInSe2 thin films production by stacked elemental layers process for large area fabrication of solar cell application

In this paper, polycrystalline CuIn(SxSe1–x)2 thin films with tunable x and Eg (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films. X-ray diffraction indicated the CuIn(SxSe1–x)2 films exhibited a homogeneous chalcopyrite structure. When T increases from 150 to 500 °C, x increases from 0 to 1, and Eg increases from 0.96 to 1.43 eV. The relations between x and Eg and the sulfurization process of CuIn(SxSe1–x)2 thin films have been discussed. This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable Eg.

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Omnidirectional and Broadband Antireflection Effect with Tapered Silicon Nanostructures Fabricated with Low-Cost and Large-Area Capable Nanosphere Lithography

Micromachines ◽

10.3390/mi12020119 ◽

2021 ◽

Vol 12 (2) ◽

pp. 119

Author(s):

Sangho Kim ◽

Gwan Seung Jeong ◽

Na Yeon Park ◽

Jea-Young Choi

Keyword(s):

Solar Cell ◽

High Efficiency ◽

Computational Study ◽

Low Cost ◽

Dimethyl Formamide ◽

Large Area ◽

Solar Cell Application ◽

Si Solar Cell ◽

Coating Method ◽

Broadband Antireflection

In this report, we present a process for the fabrication and tapering of a silicon (Si) nanopillar (NP) array on a large Si surface area wafer (2-inch diameter) to provide enhanced light harvesting for Si solar cell application. From our N,N-dimethyl-formamide (DMF) solvent-controlled spin-coating method, silica nanosphere (SNS in 310 nm diameter) coating on the Si surface was demonstrated successfully with improved monolayer coverage (>95%) and uniformity. After combining this method with a reactive ion etching (RIE) technique, a high-density Si NP array was produced, and we revealed that controlled tapering of Si NPs could be achieved after introducing a two-step RIE process using (1) CHF3/Ar gases for SNS selective etching over Si and (2) Cl2 gas for Si vertical etching. From our experimental and computational study, we show that an effectively tapered Si NP (i.e., an Si nanotip (NT)) structure could offer a highly effective omnidirectional and broadband antireflection effect for high-efficiency Si solar cell application.

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Effect of Annealing Time of TiO2 Thin Film Deposited by Spray Pyrolysis Deposition Method for Dye-Sensitized Solar Cell Application

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.773-774.647 ◽

2015 ◽

Vol 773-774 ◽

pp. 647-651

Author(s):

Noor Sakinah Khalid ◽

Siti Harwani Ishak ◽

Mohd Khairul Ahmad

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cell ◽

Electrical Properties ◽

Spray Pyrolysis ◽

Annealing Time ◽

Low Cost ◽

Spray Pyrolysis Method ◽

Solar Cell Application ◽

Glass Substrates

Titanium oxide (TiO2) thin films were deposited onto glass substrates by spray pyrolysis method. The thin films were deposited at three different annealing time; 1, 5 and 10 hours at 400°C. The structural and electrical properties were characterized using FESEM and I-V characteristic. Polycrystalline thin film with anatase crystal structure, as evidenced from X-ray diffraction pattern, was obtained with major reflection along (101). Electrical properties have been studied by means of electrical resistivity. The dark resistivity had been measured as a function of the film thickness, d. The resistivity of samples had been found to decrease with decreasing thickness. Thus, TiO2 is one of the most promising candidates for relatively low cost, simple manufacture for solar cell.

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