Manifestation of Initial Crystallization and c-Axis Texture in Pr-Fe-B magnetic Thin Films Grown on Glass Substrates under volume effect

Magnetic thin films in nanometer range have been synthesized on the glass substrates. The synthesis has been carried out using Fe2+ and Fe3+ ions in a PVA solution in H2O. A different approach has been used for the synthesis of the magnetic thin films by using NH3vapors. Obtained films have been characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and magnetic property measurement system (MPMS). The size and distribution of the magnetite nanoparticles inside the films depends upon the supply of the NH3 vapor. For large exposure time of NH3 vapors, film contains magnetite nanoparticles of size up to 80 nm. While for low exposure time of NH3 vapors, small magnetite nanoparticles of size nearly 20 nm have been obtained. The particles are independent to each other with no aggregation and are uniformly distributed inside the film.

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Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100087215 ◽

1991 ◽

Vol 49 ◽

pp. 580-581

Author(s):

L. Tang ◽

G. Thomas ◽

M. R. Khan ◽

S. L. Duan

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transmission Electron Microscopy ◽

Magnetic Recording ◽

Magnetic Thin Films ◽

Magnetic Films ◽

Substrate Bias ◽

Epitaxial Relationship ◽

Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

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Magnetic energy distribution in polycrystalline sputtered CoCr magnetic thin films

The European Physical Journal Applied Physics ◽

10.1051/epjap:2008048 ◽

2008 ◽

Vol 42 (2) ◽

pp. 125-128

Author(s):

J. F. Al-Sharab ◽

J. E. Wittig ◽

G. Bertero ◽

T. Yamashita ◽

J. Bentley ◽

...

Keyword(s):

Thin Films ◽

Energy Distribution ◽

Magnetic Energy ◽

Magnetic Thin Films

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Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

JOURNAL OF ADVANCES IN PHYSICS ◽

10.24297/jap.v9i3.1351 ◽

2015 ◽

Vol 9 (3) ◽

pp. 2461-2469

Author(s):

S. R. Gosavi ◽

K. B. Chaudhari

Keyword(s):

Thin Films ◽

Average Crystallite Size ◽

X Ray Diffraction ◽

Silar Method ◽

Growth Cycles ◽

Glass Substrates ◽

Layer Adsorption ◽

Cds Thin Films ◽

Structural And Optoelectronic Properties ◽

Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.Â The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UVâ€“VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle.Â

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PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

Kongunadu Research Journal ◽

10.26524/krj264 ◽

2018 ◽

Vol 5 (2) ◽

pp. 16-18

Author(s):

Chandar Shekar B ◽

Ranjit Kumar R ◽

Dinesh K.P.B ◽

Sulana Sundar C ◽

Sunnitha S ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Thin Film Transistors ◽

Gravimetric Method ◽

Dip Coating ◽

Organic Thin Film Transistors ◽

Poly Vinyl Alcohol ◽

Organic Thin Film ◽

Glass Substrates ◽

Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

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X- ray diffraction and dielectric properties of PbSe thin films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v15i34.115 ◽

2019 ◽

Vol 15 (34) ◽

pp. 1-14

Author(s):

Bushra A. Hasan

Keyword(s):

Thin Films ◽

Thermal Activation ◽

Thermal Evaporation ◽

Thermal Activation Energy ◽

Dielectric Constants ◽

Conductivity Measurements ◽

X Ray Diffraction ◽

Thermal Evaporation Method ◽

X Ray ◽

Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

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Sol-gel growth of Ni doped CdS on glass substrates: effect of spin coating speed and dopant concentration

Nanoscience &Nanotechnology-Asia ◽

10.2174/2210681210999200423120817 ◽

2020 ◽

Vol 10 ◽

Author(s):

Atefeh Nazari Setayesh ◽

Hassan Sedghi

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spin Coating ◽

Optical Band Gap ◽

Dopant Concentration ◽

Rotation Speed ◽

Sol Gel ◽

Band Gap Energy ◽

Gap Energy ◽

Glass Substrates

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.

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Deposition time dependent study of structural and optical properties of PbS thin films grown by CBD method

Recent Innovations in Chemical Engineering (Formerly Recent Patents on Chemical Engineering) ◽

10.2174/2405520413999200517123919 ◽

2020 ◽

Vol 13 ◽

Author(s):

Minakshi Chaudhary ◽

Yogesh Hase ◽

Ashwini Punde ◽

Pratibha Shinde ◽

Ashish Waghmare ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Band Gap ◽

Deposition Time ◽

Secondary Growth ◽

Cost Effective ◽

Xrd Analysis ◽

Structural Morphology ◽

Glass Substrates ◽

Cbd Method

: Thin films of PbS were prepared onto glass substrates by using a simple and cost effective CBD method. Influence of deposition time on structural, morphology and optical properties have been investigated systematically. The XRD analysis revealed that PbS films are polycrystalline with preferred orientation in (200) direction. Enhancement in crystallinity and PbS crystallite size has been observed with increase in deposition time. Formation of single phase PbS thin films has been further confirmed by Raman spectroscopy. The surface morphology analysis revealed the formation of prismatic and pebble-like PbS particles and with increase in deposition time these PbS particles are separated from each other without secondary growth. The data obtained from the EDX spectra shows the formation of high-quality but slightly sulfur rich PbS thin films over the entire range of deposition time studied. All films show increase in absorption with increase in deposition time and a strong absorption in the visible and sub-band gap regime of NIR range of the spectrum with red shift in band edge. The optical band gap shows decreasing trend, as deposition time increases but it is higher than the band gap of bulk PbS.

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