RF reactive magnetron sputtering for Fe-doped titania films deposited from ceramic targets

2005 ◽  
Vol 40 (9) ◽  
pp. 1584-1590 ◽  
Author(s):  
Ru-Bing Zhang
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Titania Films ◽  
Doped Titania ◽  
Ceramic Targets

EFFECTS OF ANNEALING ON THE COMPOSITION, STRUCTURE AND PHOTOCATALYTIC PROPERTIES OF C-DOPED TITANIA FILMS DEPOSITED BY REACTIVE MAGNETRON SPUTTERING USING CO2 AS CARBON SOURCE

2019 ◽  
Vol 26 (08) ◽  
pp. 1950036 ◽  
Author(s):  
B. WEI ◽  
J. L. XUE ◽  
H. T. CAO ◽  
H. G. LI ◽  
F. WEN ◽  
...  
Keyword(s):  
Carbon Source ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Photocatalytic Property ◽  
Reactive Magnetron Sputtering ◽  
Photocatalytic Properties ◽  
Reactive Magnetron ◽  
X Ray ◽  
Doped Titania

Carbon-doped titania (C:TiO2) films were prepared by reactive magnetron sputtering using CO2 as a carbon source. The as-prepared films were annealed at different temperatures in vacuum condition. A TiO2 film using O2 gas was also prepared for comparisons with C:TiO2. The structure and composition of the as-prepared, the TiO2 films and the annealed C:TiO2 films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy, whereas the surface morphology of the C:TiO2 films was measured by atomic force microscopy. Furthermore, photocatalytic properties of the films were evaluated by the degradation of methyl orange (MO). The results indicate that the photocatalytic property was improved when carbon was doped into TiO2 films, and the C:TiO2 films consist of anatase and TiO phases. The experimental results of the MO’s degradation confirm that the annealing process at various temperatures can modify the surface morphology of the films and the content of oxygen vacancies in the films. Consequently, the variations in surface topography and oxygen vacancy potentially enhance the photocatalytic activity of TiO2 films.

Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Turan ◽  
Q. Wahab ◽  
L. Hultman ◽  
M. Willander ◽  
J. -E. Sundgren
Keyword(s):  
Magnetron Sputtering ◽  
Interface State ◽  
State Density ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Mos Structure ◽  
Transmission Electron ◽  
Wide Bandgap Materials

ABSTRACTWe report the fabrication and the characterization of Metal Oxide Semiconductor (MOS) structure fabricated on thermally oxidized 3C-SiC grown by reactive magnetron sputtering. The structure and the composition of the SiO2 layer was studied by cross-sectional transmission electron microscopy (XTEM) Auger electron spectroscopy (AES). Homogeneous stoichiometric SiO2 layers formed with a well-defined interface to the faceted SiC(lll) top surface. Electrical properties of the MOS capacitor have been analyzed by employing the capacitance and conductance techniques. C-V curves shows the accumulation, depletion and deep depletion phases. The capacitance in the inversion regime is not saturated, as usually observed for wide-bandgap materials. The unintentional doping concentration determined from the 1/C2 curve was found to be as low as 2.8 × 1015 cm-3. The density of positive charges in the grown oxide and the interface states have been extracted by using high-frequency C-V and conductance techniques. The interface state density has been found to be in the order of 1011cm2-eV-1.

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