Microstructural, optical, and electrical properties of Ni–Al co-doped ZnO films prepared by DC magnetron sputtering

2014 ◽  
Vol 51 ◽  
pp. 345-350 ◽  
Author(s):  
Young Dae Jo ◽  
K.N. Hui ◽  
K.S. Hui ◽  
Y.R. Cho ◽  
Kwang Ho Kim
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Dc Magnetron Sputtering ◽  
Doped Zno ◽  
Co Doped

Optical and electrical properties of H and V co-doped ZnO films sputtered at room temperature

Optik ◽  
2017 ◽  
Vol 128 ◽  
pp. 297-303 ◽  
Author(s):  
Xudong Meng ◽  
Wei Zheng ◽  
Bing Han ◽  
Shuo Li ◽  
Junping Cai ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Doped Zno ◽  
Co Doped

Microstructural, Optical and Electrical Properties of Molybdenum Doped ZnO Films Deposited by Magnetron Sputtering

2012 ◽  
Vol 4 (2) ◽  
pp. 193-198 ◽  
Author(s):  
Shiwei Shi ◽  
Gang He ◽  
Miao Zhang ◽  
Xueping Song ◽  
Junlei Li ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Doped Zno

The Effect of Sputtering Power on the Properties of Zr-Ga Co-Doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 680 ◽  
pp. 75-80
Author(s):  
Xiao Li Wu ◽  
Hui Wang ◽  
Yu Zhen Yuan
Keyword(s):  
Magnetron Sputtering ◽  
Visible Range ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Conductive Films ◽  
Sputtering Power ◽  
Doped Zno ◽  
Co Doped

Zr-Ga co-doped ZnO transparent conductive films were prepared on glass substrates by DC magnetron sputtering at room temperature. The influence of sputtering power on the structural, electrical and optical properties of Zr-Ga co-doped ZnO films was investgated by X-ray diffraction, scanning electron microscopy (SEM), digital four-point probe and optical transmission spectroscopy. The lowest resistivity of the Zr-Ga co-doped ZnO films is 3.02×10-4Ω﹒cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (3.34 eV).

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
Ke-Wei SUN ◽  
Wan-Cheng ZHOU ◽  
Shan-Shan HUANG ◽  
Xiu-Feng TANG
Keyword(s):  
Magnetron Sputtering ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno ◽  
Sputtering Pressure
Sign in / Sign up

Export Citation Format

Share Document