X-ray reflectivity and surface energy analyses of the physical and electrical properties of α-IGZO/GZO double active layer thin film transistors

In this study, we prepared solution-based In–Ga–ZnO thin film transistors (IGZO TFTs) having a multistacked active layer. The solution was prepared using an In:Zn = 1:1 mole ratio with variation in Ga content, and the TFTs were fabricated by stacking layers from the prepared solutions. After we measured the mobility of each stacked layer, the saturation mobility showed values of 0.8, 0.6 and 0.4 (cm2/Vs), with an overall decrease in electrical properties. The interface formed between the each layers affected the current path, resulting in reduced electrical performance. However, when the gate bias VG = 10 V was applied for 1500 s, the threshold voltage shift decreased in the stack. The uniformity of the active layer was improved in the stacked active layer by filling the hole formed during pre-baking, resulting in improved device stability. Also, the indium ratio was increased to enhance the mobility from 0.86 to 3.47. These results suggest high mobility and high stability devices can be produced with multistacked active layers.

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Optimization of Solution-Processed ITZO/IGZO Dual-Active-Layer Thin-Film Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.13163 ◽

2016 ◽

Vol 16 (10) ◽

pp. 10373-10379 ◽

Cited By ~ 2

Author(s):

Jongmin Kim ◽

Pyungho Choi ◽

Nayoung Lee ◽

Sangsoo Kim ◽

Byoungdeog Choi

Keyword(s):

Thin Film ◽

Active Layer ◽

Thin Film Transistors ◽

Solution Processed ◽

Layer Thin Film

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Improvement of solution-processed Zn-Sn-O active-layer thin film transistors by novel high valence Mo doping

Nanotechnology ◽

10.1088/1361-6528/abbc25 ◽

2020 ◽

Vol 32 (2) ◽

pp. 025207

Author(s):

Cong Peng ◽

Panpan Dong ◽

Xifeng Li

Keyword(s):

Thin Film ◽

Active Layer ◽

Thin Film Transistors ◽

Solution Processed ◽

Mo Doping ◽

Layer Thin Film

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Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing

Materials ◽

10.3390/ma11112103 ◽

2018 ◽

Vol 11 (11) ◽

pp. 2103 ◽

Cited By ~ 2

Author(s):

Hyeonju Lee ◽

Xue Zhang ◽

Jung Kim ◽

Eui-Jik Kim ◽

Jaehoon Park

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Electric Field ◽

Metal Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Internal Electric Field ◽

Bilayer Structure ◽

Gate Bias ◽

X Ray

Metal-oxide thin-film transistors (TFTs) have been developed as promising candidates for use in various electronic and optoelectronic applications. In this study, we fabricated bilayer zinc oxide (ZnO)/indium oxide (In2O3) TFTs by using the sol-gel solution process, and investigated the structural and chemical properties of the bilayer ZnO/In2O3 semiconductor and the electrical properties of these transistors. The thermogravimetric analysis results showed that ZnO and In2O3 films can be produced by the thermal annealing process at 350 °C. The grazing incidence X-ray diffraction patterns and X-ray photoemission spectroscopy results revealed that the intensity and position of characteristic peaks related to In2O3 in the bilayer structure were not affected by the underlying ZnO film. On the other hand, the electrical properties, such as drain current, threshold voltage, and field-effect mobility of the bilayer ZnO/In2O3 TFTs obviously improved, compared with those of the single-layer In2O3 TFTs. Considering the energy bands of ZnO and In2O3, the enhancement in the TFT performance is explained through the electron transport between ZnO and In2O3 and the formation of an internal electric field in the bilayer structure. In the negative gate-bias stress experiments, it was found that the internal electric field contributes to the electrical stability of the bilayer ZnO/In2O3 TFT by reducing the negative gate-bias-induced field and suppressing the trapping of holes in the TFT channel. Consequently, we suggest that the bilayer structure of solution-processed metal-oxide semiconductors is a viable means of enhancing the TFT performance.

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