Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

2013 ◽  
Vol 102 (8) ◽  
pp. 083505 ◽  
Author(s):  
Jayapal Raja ◽  
Kyungsoo Jang ◽  
Nagarajan Balaji ◽  
Woojin choi ◽  
Thanh Thuy Trinh ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Temperature Stability ◽  
Gate Bias ◽  
Layer Thin Film

Amorphous InZnO:Li/ZnSnO:Li dual-active-layer thin film transistors

2019 ◽  
Vol 111 ◽  
pp. 165-169 ◽  
Author(s):  
Jinbao Su ◽  
Qi Wang ◽  
Yaobin Ma ◽  
Ran Li ◽  
Shiqian Dai ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Layer Thin Film

Optimization of Solution-Processed ITZO/IGZO Dual-Active-Layer Thin-Film Transistors

2016 ◽  
Vol 16 (10) ◽  
pp. 10373-10379 ◽  
Author(s):  
Jongmin Kim ◽  
Pyungho Choi ◽  
Nayoung Lee ◽  
Sangsoo Kim ◽  
Byoungdeog Choi
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Layer Thin Film

X-ray reflectivity and surface energy analyses of the physical and electrical properties of α-IGZO/GZO double active layer thin film transistors

2014 ◽  
Vol 40 (1) ◽  
pp. 2419-2425 ◽  
Author(s):  
Jia-Ling Wu ◽  
Han-Yu Lin ◽  
Bo-Yuan Su ◽  
Yu-Cheng Chen ◽  
Sheng-Yuan Chu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Surface Energy ◽  
Active Layer ◽  
Thin Film Transistors ◽  
X Ray ◽  
Layer Thin Film

P-19: Dual Active Layer Structure of Nitrogen Doped Amorphous InSnZnO Thin-Film Transistors for Negative Gate Bias Stability Improvement

2016 ◽  
Vol 47 (1) ◽  
pp. 1186-1188 ◽  
Author(s):  
GongTan Li ◽  
Bo-Ru Yang ◽  
Chuan Liu ◽  
Chia-Yu Lee ◽  
Yuan-Chun Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Layer Structure ◽  
Gate Bias ◽  
Nitrogen Doped ◽  
Bias Stability

scholarly journals Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel

RSC Advances ◽  
2021 ◽  
Vol 11 (29) ◽  
pp. 17910-17913
Author(s):  
Liuhui Lei ◽  
Yuanyuan Tan ◽  
Xing Yuan ◽  
Wei Dou ◽  
Jiale Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Layer Thin Film

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature.

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance

High temperature-stability of organic thin-film transistors based on quinacridone pigments

2019 ◽  
Vol 66 ◽  
pp. 53-57 ◽  
Author(s):  
Yasin Kanbur ◽  
Halime Coskun ◽  
Eric Daniel Głowacki ◽  
Mihai Irimia-Vladu ◽  
Niyazi Serdar Sariciftci ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Thin Film Transistors ◽  
Temperature Stability ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
High Temperature Stability
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