Effects of processing parameters on ultraviolet emission of In-doped ZnO nanodisks grown by carbothermal reduction

2007 ◽  
Vol 61 (8-9) ◽  
pp. 1767-1770 ◽  
Author(s):  
Po-Fan Lin ◽  
Chih-Yuan Ko ◽  
Wen-Tai Lin ◽  
C.T. Lee
Keyword(s):  
Carbothermal Reduction ◽  
Processing Parameters ◽  
Ultraviolet Emission ◽  
Doped Zno

Effect of MgO Coating on the Hydration Resistance of MgO-CaO Clinkers

2011 ◽  
Vol 695 ◽  
pp. 324-327 ◽  
Author(s):  
Hong Feng Yin ◽  
Yan Long Ma ◽  
Jun Yang
Keyword(s):  
Carbon Source ◽  
Carbon Black ◽  
Reaction Temperature ◽  
Carbothermal Reduction ◽  
Processing Parameters ◽  
Holding Time ◽  
Deposition Mechanism ◽  
The Poor ◽  
Hydration Resistance ◽  
Prolonged Holding

To overcome the disadvantage of MgO-CaO refractories, as the poor hydration resistance, MgO coating on the MgO-CaO clinker was fabricated by carbothermal reduction MgO with carbon as reduction agent and then the oxidation of Mg vapor. Effect of processing parameters (such as carbon source, reaction temperature and holding time) on the hydration resistance of MgO-CaO clinkers were investigated by hydration resistance test and SEM. The results indicated that the hydration resistance of treated MgO-CaO clinkers was improved when carbon black was used as reduction agent due to easy reaction with MgO than the graphite and coke. The high reaction temperature among 1450~1600°C and prolonged holding time within 4 h resulted in improvement of the hydration resistance of treated MgO-CaO clinker. Deposition mechanism of MgO coating on the MgO-CaO clinker was discussed.

CuSiGe-catalyzed growth of Si1−xGexOynanowire assemblies with various morphologies

2007 ◽  
Vol 22 (6) ◽  
pp. 1618-1623 ◽  
Author(s):  
Chih-Yuan Ko ◽  
Wen-Yuan Hsieh ◽  
Ting-Jui Hsu ◽  
Wen-Tai Lin
Keyword(s):  
Carbothermal Reduction ◽  
Processing Parameters ◽  
Si Substrate ◽  
Vapor Liquid Solid ◽  
Temperature Controlled ◽  
Vapor Liquid

Si1−xGexOynanowire (SiGeONW) assemblies with cord-, chain-, and tubelike morphologies were grown on a Si substrate via the carbothermal reduction of GeO2/CuO powders at 1100 °C in Ar. The growth of various SiGeONWs assemblies follows the vapor-liquid-solid process. The CuSiGe droplets formed during the growth of SiGeONWs simultaneously play the roles of catalyst and reactant. The morphology of SiGeONWs assemblies is not temperature controlled but dependent on the Cu concentration and the size of CuSiGe catalysts. This phenomenon is unlike the Ge- and Ga-catalyzed growth of SiOxnanowire assemblies. In addition, the processing parameters and the mechanisms for the growth of SiGeONWs assemblies with various morphologies are discussed.

Fabrication of Porous β-SiAlON Preforms from Kaolin for Liquid Metal Infiltration

2007 ◽  
Vol 554 ◽  
pp. 85-89 ◽  
Author(s):  
Adem Demir ◽  
F. Caliskan
Keyword(s):  
Liquid Metal ◽  
Carbothermal Reduction ◽  
Xrd Analysis ◽  
Processing Parameters ◽  
Infiltration Process ◽  
Sem Image ◽  
Sialon Ceramic ◽  
N2 Atmosphere ◽  
Liquid Metal Infiltration ◽  
Metal Infiltration

In this study, the production of β-Si6-zAlzOzN8-z (z =3) powders by the carbothermal reduction and nitridation of kaolin (Al2O3.2SiO2.2H2O) of Turkish origin (Can-Canakkale) was carried out with different processing parameters. It was found that the morphology of the produced SiAlON powder was mixture of irregular and whisker like grains. Therefore this morphology is suitable for liquid metal infiltration since the powders are already high porous. The kaolin powder containing stoichiometric rate carbon black and 30 % charcoal were pressed and reacted under nitrogen flow (2 lt/min) between 1400-1475°C for 4 h. After a carbothermal reduction and nitridation (CRN) process, porous β- SiAlON ceramic was produced from natural kaolin. Residual carbon and charcoal in the produced ß-SiAlON ceramic were fired at 1000°C giving extra porosity. The porous ß-SiAlON ceramics were sintered under N2 atmosphere at 1550°C for 2 h to make preform for infiltration process. SEM image analyses were carried out to determine preform and pore morphology and XRD analysis were performed for phase transformation.

scholarly journals Hybrid quadrupole plasmon induced spectrally pure ultraviolet emission from a single AgNPs@ZnO:Ga microwire based heterojunction diode

2020 ◽  
Vol 2 (3) ◽  
pp. 1340-1351 ◽  
Author(s):  
Xiangbo Zhou ◽  
Mingming Jiang ◽  
Yuting Wu ◽  
Kunjie Ma ◽  
Yang Liu ◽  
...  
Keyword(s):  
High Performance ◽  
Hole Injection ◽  
Ag Nanoparticle ◽  
Heterojunction Diode ◽  
Ultraviolet Emission ◽  
Nanoparticle Deposition ◽  
Hole Injection Layer ◽  
Doped Zno

In this work, a single Ga-doped ZnO microwire prepared with large-sized Ag nanoparticle deposition (AgNPs@ZnO:Ga MW) was utilized to construct a high-performance heterojunction diode, with p-GaN serving as the hole injection layer.

Study on Preparation and Photoluminescence Performance of High-Directional ZAO Nanorod Arrays

2013 ◽  
Vol 662 ◽  
pp. 72-75
Author(s):  
Yang Lin Liu ◽  
Xue Chen Duan ◽  
Yan Yan Liu
Keyword(s):  
Sol Gel ◽  
Processing Parameters ◽  
Diameter Distribution ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Glass Substrates ◽  
Nano Structures ◽  
Thin Film Preparation ◽  
Doped Zno ◽  
Film Preparation

Al-doped zinc oxide (ZAO);nanorod arrays;thin film;preparation; photoluminescence. Abstract: ZAO thin films were deposited on glass substrates by sol-gel method and then by controlling processing parameters such as the amount of doped Al and stability, etc.well-aligned Al-doped ZnO nanorod arrays with a narrow diameter distribution were successfully grown on substrates by hydrothermal method, where the substrates were spin-coated with seed layer.The experiments show the 2% Al-doped and diameter about 50nm of ZAO nanorod arrays has the best photoluminescence and surfactants can promote the growth of ZAO rod-like nano-structures and contribute to the formation of ZAO nanorod arrays with highly oriented nanorod arrays.

Structure and deep ultraviolet emission of Co-doped ZnO films with Co3O4 nano-clusters

2010 ◽  
Vol 120 (2-3) ◽  
pp. 480-483 ◽  
Author(s):  
L.J. Zhuge ◽  
X.M. Wu ◽  
Z.F. Wu ◽  
X.M. Yang ◽  
X.M. Chen ◽  
...  
Keyword(s):  
Zno Films ◽  
Ultraviolet Emission ◽  
Deep Ultraviolet ◽  
Doped Zno ◽  
Deep Ultraviolet Emission ◽  
Co Doped
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