Room temperature ferromagnetism induced by N-ion implantation in 6H-SiC single crystal

Buried TiSi2 layers, about 600Å thick and 900Å below the surface, were formed in < 111> silicon by ion implantation. The implantation was done with either 120 or 170 keV Ti+ to doses ranging from 5 x 1016 to 2 x 1017 ions/cm2, and at temperatures of between ambient and 650° C. Annealing was done at 600° C, 700°C and 1000°C. Continuous buried layers were achieved only with samples implanted with doses equal or greater than 1017 ions/cm2 and at temperatures above 450°C. Below this dose TiSi2, was present only as discrete precipitates. For room temperature implants, the TiSi2, layer is formed on the surface. The damage present consists of dispersed TiSi6 precipitates and microtwins.

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Room-temperature ferromagnetism in Cu-implanted 6H-SiC single crystal

Applied Physics Letters ◽

10.1063/1.4800562 ◽

2013 ◽

Vol 102 (14) ◽

pp. 142409 ◽

Cited By ~ 16

Author(s):

H. W. Zheng ◽

Y. L. Yan ◽

Z. C. Lv ◽

S. W. Yang ◽

X. G. Li ◽

...

Keyword(s):

Single Crystal ◽

Room Temperature ◽

Room Temperature Ferromagnetism

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Solid krypton in MgO

Journal of Materials Research ◽

10.1557/jmr.1992.3171 ◽

1992 ◽

Vol 7 (12) ◽

pp. 3171-3174 ◽

Cited By ~ 7

Author(s):

M. Grant Norton ◽

C. Barry Carter ◽

Elizabeth L. Fleischer ◽

James W. Mayer

Keyword(s):

High Pressure ◽

Electron Diffraction ◽

Ion Implantation ◽

Single Crystal ◽

Magnesium Oxide ◽

Room Temperature ◽

Noble Gas ◽

Lattice Parameter ◽

Solid Krypton ◽

Measured Lattice Parameter

Recent work by the authors has been extended to demonstrate the formation of solid krypton in single-crystal magnesium oxide. The solid inclusions, which were formed by ion implantation at room temperature, have been identified by electron diffraction. The formation of solid noble gas inclusions at room temperature indicates that they were under a high pressure. This pressure was determined, based on the measured lattice parameter, to be 1.7 GPa.

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Observation of room temperature ferromagnetism and exchange bias in a 55Mn+ ion-implanted unintentionally doped β-Ga2O3 single crystal

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2020.166687 ◽

2020 ◽

Vol 506 ◽

pp. 166687

Author(s):

Bo Peng ◽

Yuming Zhang ◽

Yutian Wang ◽

Lei Yuan ◽

Linpeng Dong ◽

...

Keyword(s):

Single Crystal ◽

Exchange Bias ◽

Room Temperature ◽

Room Temperature Ferromagnetism ◽

Ion Implanted

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Cryo-Implantation Technology for Controlling Defects and impurity out diffusion

MRS Proceedings ◽

10.1557/proc-610-b3.8 ◽

2000 ◽

Vol 610 ◽

Cited By ~ 7

Author(s):

Atsushi Murakoshi ◽

Kyoichi Suguro ◽

Masao Iwase ◽

Mitsuhiro Tomita ◽

Katsuya Okumura

Keyword(s):

Ion Implantation ◽

Substrate Temperature ◽

Single Crystal ◽

Room Temperature ◽

Amorphous Layer ◽

Junction Depth ◽

Si Substrate ◽

Enhanced Diffusion ◽

Pn Junction ◽

Order Of Magnitude

AbstractWe propose a novel process module by using cryo-implantation and rapid thermal annealing (RTA). Boron or arsenic ions were implanted into a 8 inch (100) Si substrate which was cooled by using liquid nitrogen. The substrate temperature was controlled to be below at -160°C during ion implantation. It was found that an amorphous layer was formed by boron or arsenic implantation and the amorphous layer was completely recovered to a single crystal after annealing at 900°C for 30sec. No dislocation was observed in the implanted layer. It was also found that the thermal diffusion of boron was suppressed by cryo-implantation. PN junction depth was found to be about 10-20% shallower than that of room temperature implantation. These results suggest that transient enhanced diffusion of boron can be reduced by suppressing vacancy migration toward the surface during implantation. Cryo-implantation was found to be very effective in reducing defects and PN junction leakage was successfully reduced by one order of magnitude as compared with room temperature implantation.

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Luminescence During Tb-Ion Implantation into Sapphire

MRS Proceedings ◽

10.1557/proc-354-147 ◽

1994 ◽

Vol 354 ◽

Cited By ~ 2

Author(s):

Makoto Kumagai ◽

Masaya Iwaki

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Temperature Change ◽

Room Temperature ◽

Optical Filters ◽

Atomic Ratio ◽

Maximum Intensity ◽

Luminescence Spectra ◽

Strong Emission ◽

Naked Eye

AbstractA study has been made of the luminescence during Tb-ion implantation in Al2O3 or by Ar- or He-ions bombardment to Tb-ion implanted Al2O3. The substrates used were colorless and transparent single crystal ɑ-Al2O3 with (0001) or (1102) surface orientation. Ion implantations of Tb-ions in Al2O3 were carried out at fluences of 1x1013 to 1x1017 Tb/cm2 at 100 keV at nearly room temperature. Change in color of Al2O3, substrates by Tb implantation was invisible to the naked eye. The luminescence spectra were measured by Ar (100 keV) or He (50 keV) bombardment to Tb implanted Al2O3 or during Tb implantation into Al2O3 using a spectroscopy with three optical filters and photomultiplier. The luminescence spectra during Tb implantation into AljOj have four clear peaks identified as emission due to D-F transitions of Tb3+ state. The luminescence spectra of Tb implanted A12O3 excited by He, Ar and Tb bombardment were almost the same except for the luminescence at the wavelength ranging from 300 to 450 nm, which is caused by strong emission from A12O3 itself. The peak of the luminescence appears at 550 nm, and its intensity depends on the Tb dose. The maximum intensity of luminescence during Tb implantation at room temperature is obtained as the maximum atomic ratio of implanted Tb is 2–3 atomic %.

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