Formation of Buried Tisi2 Layers in Single Crystal Silicon by Ion Implantion

1987 ◽  
Vol 107 ◽  
Author(s):  
P. Madakson ◽  
G.J. Clark ◽  
F.K. Legoues ◽  
F.M. d'Heurle ◽  
J.E.E. Baglin
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Buried Layers

Buried TiSi2 layers, about 600Å thick and 900Å below the surface, were formed in < 111> silicon by ion implantation. The implantation was done with either 120 or 170 keV Ti+ to doses ranging from 5 x 1016 to 2 x 1017 ions/cm2, and at temperatures of between ambient and 650° C. Annealing was done at 600° C, 700°C and 1000°C. Continuous buried layers were achieved only with samples implanted with doses equal or greater than 1017 ions/cm2 and at temperatures above 450°C. Below this dose TiSi2, was present only as discrete precipitates. For room temperature implants, the TiSi2, layer is formed on the surface. The damage present consists of dispersed TiSi6 precipitates and microtwins.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

scholarly journals Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon

2020 ◽  
Vol 14 (6) ◽  
pp. 1352-1357
Author(s):  
S. A. Vabishchevich ◽  
S. D. Brinkevich ◽  
V. S. Prosolovich ◽  
N. V. Vabishchevich ◽  
D. I. Brinkevich
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Fabrication of High Quality Silicide Layers by Ion Implantation

1989 ◽  
Vol 147 ◽  
Author(s):  
Karen J Reeson ◽  
Ann De Veirman ◽  
Russell Gwilliam ◽  
Chris Jeynes ◽  
Brian J Sealy ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal Silicon ◽  
High Quality ◽  
Crystal Silicon ◽  
The Matrix ◽  
Buried Layer ◽  
Buried Layers ◽  
C 30 ◽  
Type Lattice ◽  
Anneal Temperature

AbstractBuried layers of CoSi2 have been successfully fabricated in (100) single crystal silicon by implanting 350 keV Co+ to doses in the range 2 - 7 × 1017 cm−2 at a temperature of ∼550°C. For doses ≥ 4 × 101759Co+ cm−2, a continuous buried layer of CoSi2 grows epitaxially, during implantation. After annealing (1000°C 30 minutes) continuous layers of stoichiometric CoSi2 which are coherent with the matrix are produced for doses ≥ 4 × 101759Co+ cm−2. For doses of ≤ 2 × 101759Co+, cm−2, discrete octahedral precipitates of monocrystalline CoSi2 are observed. Isochronal annealing (for 5s) at temperatures in the range 800–1200°C, shows that at temperatures ≥ 900°C there is significant redistribution of the Co from B-type or interstitial sites → substitutional A-type lattice sites. As the anneal temperature is increased there is a corresponding improvement in the crystallinity and coherency of the Si and CoSi2 lattices. This shows that at a given temperature much of the Co redistribution takes place within the first 5s of the anneal.

A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon

1995 ◽  
Vol 389 ◽  
Author(s):  
S.-H. Yang ◽  
S. Morris ◽  
S. Tian ◽  
K. Parab ◽  
A. F. Tasch ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Single Crystal ◽  
Density Functional ◽  
Single Crystal Silicon ◽  
Stopping Power ◽  
Crystal Silicon ◽  
Electronic Density ◽  
New Model ◽  
Electronic Stopping Power

ABSTRACTIn this paper is reported the development and implementation of a new local electronic stopping model for arsenic ion implantation into single-crystal silicon. Monte Carlo binary collision (MCBC) models are appropriate for studying channeling effects since it is possible to include the crystal structure in the simulators. One major inadequacy of existing MCBC codes is that the electronic stopping of implanted ions is not accurately and physically accounted for, although it is absolutely necessary for predicting the channeling tails of the profiles. In order to address this need, we have developed a new electronic stopping power model using a directionally dependent electronic density (to account for valence bonding) and an electronic stopping power based on the density functional approach. This new model has been implemented in the MCBC code, UT-MARLOWE The predictions of UT-MARLOWE with this new model are in very good agreement with experimentally-measured secondary ion mass spectroscopy (SIMS) profiles for both on-axis and off-axis arsenic implants in the energy range of 15-180 keV.

A Three-Dimensional Monte Carlo Model for Phosphorus Implants into (100) Single-Crystal Silicon

1997 ◽  
Vol 490 ◽  
Author(s):  
Myung-Sik Son ◽  
Ho-Jung Hwang
Keyword(s):  
Monte Carlo ◽  
Single Crystal ◽  
Room Temperature ◽  
Monte Carlo Model ◽  
Three Dimensional ◽  
Single Crystal Silicon ◽  
Amorphous Region ◽  
Electronic Energy ◽  
Crystal Silicon ◽  
Dynamic Simulation Model

ABSTRACTAn alternative three-dimensional (3D) Monte Carlo (MC) dynamic simulation model for phosphorus implant into (100) single-crystal silicon has been developed which incorporates the effects of channeling and damage. This model calculates the trajectories of both implanted ions and recoiled silicons and concurrently and explicitly affects both ions and recoils due to the presence of accumulative damage. In addition, the model for room-temperature implant accounts for the self-annealing effect using our defined recombination probabilities for vacancies and interstitials saved on the unit volumes. Our model has been verified by the comparison with the previously published SIMS data over commonly used energy range between 10 and 180 keV, using our proposed empirical electronic energy loss model. The 3D formations of the amorphous region and the ultra-shallow junction around the implanted region could be predicted by using our model, TRICSI (TRansport Ions into Crystal-Silicon).

Single Crystal Silicon Membranes

1987 ◽  
Vol 115 ◽  
Author(s):  
Andres Fernandez ◽  
P. Hren ◽  
K. C. Lee ◽  
J. Silcox
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Subsequent Annealing ◽  
Crystal Silicon ◽  
Anodic Etching ◽  
Silicon Membranes

ABSTRACTSelf-supporting, thin single crystal membranes can be fabricated from silicon wafers using ion implantation, anodic etching and subsequent annealing. Typically, membranes approximately 1200Å thick and about 250μm in diameter are formed in wafers 4 mil thick. Discs surrounding the membranes can be cut out to provide suitable TEM samples. In this paper, the steps for preparing such samples are presented with as much attention paid to experimental details as possible.

Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon

1997 ◽  
Author(s):  
Borna J. Obradovic ◽  
Steven J. Morris ◽  
Michael F. Morris ◽  
Shiyang Tian ◽  
Geng Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Energy Model ◽  
Low Energy ◽  
Crystal Silicon

Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

1990 ◽  
Vol 182 ◽  
Author(s):  
B. Raicu ◽  
M.I. Current ◽  
W.A. Keenan ◽  
D. Mordo ◽  
R. Brennan ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Polysilicon Films ◽  
P Type

AbstractHighly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

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