Study of p-type AlGaAs film grown on sapphire substrate using GaAs buffer layer

2014 ◽  
Vol 123 ◽  
pp. 1-5 ◽  
Author(s):  
Jae Hoon Kim ◽  
Hyung Joo Lee
Keyword(s):  
Buffer Layer ◽  
Sapphire Substrate ◽  
Gaas Buffer Layer ◽  
P Type

scholarly journals Solar-Blind AlGaN Heterostructure Photodiodes

2000 ◽  
Vol 5 (1) ◽  
Author(s):  
J.D. Brown ◽  
Jizhong Li ◽  
P. Srinivasan ◽  
J. Matthews ◽  
J.F. Schetzina
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Internal Quantum Efficiency ◽  
Base Layer ◽  
Spectral Responsivity ◽  
Uv Detector ◽  
Solar Blind ◽  
Aln Buffer ◽  
P Type

A backside-illuminated solar-blind UV detector based on an AlGaN p-i-n heterostructure has been successfully synthesized, fabricated and tested. The p-i-n photodiode structure consists of a 1.0 μm n-type Al0.64Ga0.36N:Si layer grown by MOVPE onto a low temperature AlN buffer layer on a polished sapphire substrate. On top of this base layer is a 0.2 μm undoped Al0.47Ga0.53N active layer and a 0.5 μm p-type Al0.47Ga0.53N:Mg top layer. Square mesas of area A = 4 × 10−4 cm2 were obtained by reactive ion etching using BCl3. The solar-blind photodiode exhibits a very narrow UV spectral responsivity band peaked at 273 nm with a FWHM = 21 nm. Maximum responsivity R = 0.051 A/W at 273 nm, corresponding to an internal quantum efficiency of 27%. R0A values up to 8 × 107Ω-cm2 were obtained, corresponding to D* = 3.5 × 1012 cm Hz1/2W−1 at 273 nm.

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

2015 ◽  
Vol 57 (10) ◽  
pp. 1966-1971 ◽  
Author(s):  
V. N. Bessolov ◽  
A. S. Grashchenko ◽  
E. V. Konenkova ◽  
A. V. Myasoedov ◽  
A. V. Osipov ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Growth Mechanism ◽  
Epitaxial Layers ◽  
P Type

Organic solar cells employing magnetron sputtered p-type nickel oxide thin film as the anode buffer layer

2010 ◽  
Vol 94 (12) ◽  
pp. 2332-2336 ◽  
Author(s):  
Sun-Young Park ◽  
Hye-Ri Kim ◽  
Yong-Jin Kang ◽  
Dong-Ho Kim ◽  
Jae-Wook Kang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Nickel Oxide ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Oxide Thin Film ◽  
Anode Buffer Layer ◽  
P Type ◽  
Type Nickel ◽  
Nickel Oxide Thin Film

Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

1996 ◽  
Vol 286 (1-2) ◽  
pp. 107-110 ◽  
Author(s):  
Ching-Ting Lee ◽  
Chi-Yu Wang ◽  
Yeong-Chang Chou
Keyword(s):  
Buffer Layer ◽  
Layer Function ◽  
Gaas Buffer Layer

The growth of thick GaN film on sapphire substrate by using ZnO buffer layer

1993 ◽  
Vol 128 (1-4) ◽  
pp. 384-390 ◽  
Author(s):  
T. Detchprohm ◽  
H. Amano ◽  
K. Hiramatsu ◽  
I. Akasaki
Keyword(s):  
Buffer Layer ◽  
Sapphire Substrate ◽  
Zno Buffer Layer ◽  
Gan Film

scholarly journals Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates

1995 ◽  
Vol 66 (19) ◽  
pp. 2531-2533 ◽  
Author(s):  
Dong‐Keun Kim ◽  
Ju‐Heon Ahn ◽  
Byung‐Teak Lee ◽  
H. J. Lee ◽  
S. S. Cha ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Patterned Substrates ◽  
High Quality ◽  
Liquid Phase Epitaxial ◽  
Gaas Buffer Layer ◽  
Liquid Phase Epitaxial Growth

Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

2020 ◽  
Vol 90 (2) ◽  
pp. 20301
Author(s):  
Ilkay Demir ◽  
Ahmet Emre Kasapoğlu ◽  
Hasan Feyzi Budak ◽  
Emre Gür ◽  
Sezai Elagoz
Keyword(s):  
Buffer Layer ◽  
Growth Parameters ◽  
Internal Quantum Efficiency ◽  
Optical Quality ◽  
Structural Quality ◽  
Atomic Step ◽  
Organic Vapor ◽  
Gaas Buffer Layer ◽  
Metal Organic ◽  
Low Temperature Gaas

We investigate influence of GaAs buffer layer (BL) growth parameters such as temperature and thickness on the structural, morphological, crystalline and optical quality of metal organic vapor phase epitaxy (MOVPE) grown heterostructures of GaAs on Ge. It was found that the optimal BL conditions significantly decrease the effects of anti-phase boundaries (APBs) even when grown on offcut Ge substrate by two-step growth technique with AsH3 pre-flow to promote double atomic step formation. It is observed that as the growth temperature increases, the growth rate of the GaAs BL increases, too. Improvement on the structural quality is observed up to BLs temperature of 535 °C, then it decreases. On the other hand, as the different thick BLs, 12, 25, 75 nm are considered, the epilayer grown on the 25 nm thick BL has shown the lowest full width at half maximum (FWHM) value, large photoluminescence peak intensity and internal quantum efficiency (IQE).

Increase in Open-circuit Voltage and Improved Stability of Organic Solar Cells by Inserting a Molybdenum Trioxide Buffer Layer

2009 ◽  
Vol 1154 ◽  
Author(s):  
Hideyuki Murata ◽  
Yoshiki Kinoshita ◽  
Yoshihiro Kanai ◽  
Toshinori Matsushima ◽  
Yuya Ishii
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Type Material ◽  
Type Layer ◽  
Improved Stability ◽  
The Stability ◽  
P Type

AbstractWe report the increase in open-circuit voltage (Voc) by inserting of MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as a p-type material and C60 as a n-type material, the Voc effectively increased from 0.57 to 0.97 V as increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (−4.50 eV) of C60 and the HOMO (−5.50 eV) of H2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device linearly increased from 1.24% to 1.88%. We also demonstrated that a MoO3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H2TPP and N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine as a p-type layer. The both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface at ITO/p-type layer affects the device stability.

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