Investigation of honey thin film as a resistive switching material for nonvolatile memories

2020 ◽  
Vol 271 ◽  
pp. 127796 ◽  
Author(s):  
Aleksey A. Sivkov ◽  
Yuan Xing ◽  
Kuan Yew Cheong ◽  
Xiangqun Zeng ◽  
Feng Zhao
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Nonvolatile Memories ◽  
Switching Material

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories

2011 ◽  
Vol 110 (11) ◽  
pp. 114117 ◽  
Author(s):  
Dai-Ying Lee ◽  
Tseung-Yuen Tseng
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Ga2o3 Thin Film

Controlling the ferroelectric and resistive switching properties of a BiFeO3thin film prepared using sub-5 nm dimension nanoparticles

2017 ◽  
Vol 19 (38) ◽  
pp. 26085-26097 ◽  
Author(s):  
Mandar M. Shirolkar ◽  
Jieni Li ◽  
Xiaolei Dong ◽  
Ming Li ◽  
Haiqian Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Film Formation ◽  
Thin Film Formation

The effects of thin film formation on the multiferroic and resistive switching properties of sub-5 nm BiFeO3nanoparticles were investigated.

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

2011 ◽  
Vol 520 (4) ◽  
pp. 1246-1250 ◽  
Author(s):  
Kou-Chen Liu ◽  
Wen-Hsien Tzeng ◽  
Kow-Ming Chang ◽  
Jiun-Jie Huang ◽  
Yun-Ju Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Resistive Switching ◽  
Film Properties ◽  
Switching Characteristics
Sign in / Sign up

Export Citation Format

Share Document