Investigation of Mn doping concentration on the structural, optical, antimicrobial and dye degradation properties of ZnS thin films

AbstractThin films of manganese-doped cadmium oxide (CdO:Mn) with different Mn-doping levels (0, 1, 2, 3 and 4 at.%) were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1) preferential orientation. Mn-doping causes a slight shift of the (1 1 1) diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

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Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

MRS Proceedings ◽

10.1557/proc-444-161 ◽

1996 ◽

Vol 444 ◽

Cited By ~ 1

Author(s):

Hyeon-Seag Kim ◽

D. L. Polla ◽

S. A. Campbell

Keyword(s):

Thin Films ◽

Loss Factor ◽

High Field ◽

Microelectromechanical Systems ◽

Charge Trapping ◽

Metal Organic ◽

Electrical Reliability ◽

Silicon Based ◽

Degradation Properties ◽

Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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Structural and Optical Properties of Ni:ZnO Thin Films-Effect of Annealing and Doping Concentration

SOP Transactions on Applied Physics ◽

10.15764/aphy.2014.04003 ◽

2014 ◽

pp. 27-36 ◽

Cited By ~ 4

Author(s):

Jijoy Mathew ◽

◽

George Varghese ◽

Jacob Mathew ◽

◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Doping Concentration ◽

Structural And Optical Properties

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Effect of Zn doping concentration on optical band gap of PbS thin films

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2019.04.117 ◽

2019 ◽

Vol 792 ◽

pp. 1000-1007 ◽

Cited By ~ 6

Author(s):

Mengting Liu ◽

Qiuqiang Zhan ◽

Wei Li ◽

Rui Li ◽

Qinyu He ◽

...

Keyword(s):

Thin Films ◽

Band Gap ◽

Doping Concentration ◽

Optical Band Gap ◽

Zn Doping

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Effect of Mn doping on the structural, magnetic, optical and electrical properties of ZrO2–SnO2 thin films prepared by sol–gel method

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2016.03.045 ◽

2016 ◽

Vol 675 ◽

pp. 331-340 ◽

Cited By ~ 20

Author(s):

V.S. Anitha ◽

S. Sujatha Lekshmy ◽

K. Joy

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Sol Gel ◽

Optical And Electrical Properties ◽

Gel Method ◽

Mn Doping ◽

Sol Gel Method ◽

Sno2 Thin Films

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Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

Journal of Semiconductors ◽

10.1088/1674-4926/43/1/012801 ◽

2022 ◽

Vol 43 (1) ◽

pp. 012801

Author(s):

R. Rahaman ◽

M. Sharmin ◽

J. Podder

Keyword(s):

Thin Films ◽

Band Gap ◽

Spray Pyrolysis Technique ◽

Band Gap Energy ◽

Dielectric Constants ◽

X Rays ◽

Electron Effective Mass ◽

Mn Doping ◽

Type Transition ◽

Mn Doped

Abstract Here we discuss the synthesis of copper (II) oxide (CuO) and manganese (Mn)-doped CuO thin films varying with 0 to 8 at% Mn using the spray pyrolysis technique. As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at% Mn doping. Energy dispersive analysis of X-rays confirmed the chemical composition of the films. X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the ( 11) peak. Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67–2.90 eV and 0.11–1.73 eV, respectively. Refractive index and static dielectric constants were computed from the optical spectra. Electrical resistivity of CuO and Mn-doped CuO (Mn:CuO) thin films was found in the range from 10.5 to 28.6 Ω·cm. The tiniest electron effective mass was calculated for 4 at% Mn:CuO thin films. P to n-type transition was observed for 4 at% Mn doping in CuO films. Carrier concentration and mobility were found in the orders of 1017 cm–3 and 10–1 cm2/(V·s), respectively. The Hall coefficient was found to be between 9.9 and 29.8 cm3/C. The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.

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Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2021.2913 ◽

2021 ◽

Vol 16 (2) ◽

pp. 163-169

Author(s):

Alaa Y. Mahmoud ◽

Wafa A. Alghameeti ◽

Fatmah S. Bahabri

Keyword(s):

Thin Films ◽

Activation Energy ◽

Electrical Properties ◽

Thermal Activation ◽

Doping Concentration ◽

Energy Gap ◽

Cupric Oxide ◽

Electrical Energy ◽

Thermal Activation Energy ◽

Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

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