Method of obtaining multicomponent fine-grained powders for boron carbide matrix ceramics production

Ceramics samples in the form of a parallelepiped with high strength characteristics have been made. For the manufacture of the ceramics samples a powder mixture from submicron В4С powder with additives (1 wt%, 5 wt%, 10 wt%) of boron carbide nanopowder was used. The physical properties of the powder mixtures and strength properties of sintered ceramics have been studied. It was shown that the use of submicron fractions of the boron carbide powder together with nanoadditives is a determining factor in the formation of dense fine-grained structure providing improved physical and mechanical properties of the ceramics.

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The Comparison between Boron Carbide (B4C) with other Common Inhibitors on Physical and Mechanical Properties of WC/Co

International Journal of Modern Physics Conference Series ◽

10.1142/s2010194512001900 ◽

2012 ◽

Vol 05 ◽

pp. 102-110 ◽

Cited By ~ 3

Author(s):

H. Tamizifar ◽

A.M. Hadian ◽

M. Tamizifar

Keyword(s):

Boron Carbide ◽

Vanadium Carbide ◽

Sintering Temperature ◽

Physical And Mechanical Properties ◽

Growth Inhibitor ◽

Hard Metal ◽

Growth Inhibitors ◽

Fine Grained ◽

Hard Metals ◽

Boron Carbide B4c

The hardness, toughness and sum of cracks measurement of fine-grained WC - Co hard metals were studied. Thirty commercial and experimental hard metal grades with different additives such as boron carbide ( B 4 C ), vanadium carbide ( VC ), chromium carbide ( Cr 3 C 2) and silicon carbide ( SiC ) were prepared in a commercial sinter HIP furnace. Physical, mechanical and microstructure properties were investigated to build up a representative hardness/sum of cracks measurement band. This band was then used to estimate the most effective sintering temperature and the amount of each additives. Afterwards, influence of grain growth inhibitors in optimum condition were compared. The results showed that the grades, doped with B 4 C and VC as growth inhibitor exhibits more hardness than other comparable doped alloys. However, Cr 3 C 2 is favorable in toughness improvement.

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Reactive sintering of B4c-TiB2 composites from B4 and TiO2 precursors

Processing and Application of Ceramics ◽

10.2298/pac2004329s ◽

2020 ◽

Vol 14 (4) ◽

pp. 329-335

Author(s):

Pavol Svec ◽

Zuzana Gábrisová ◽

Alena Brusilová

Keyword(s):

Fracture Toughness ◽

Boron Carbide ◽

Titanium Diboride ◽

Sintering Temperature ◽

Secondary Phase ◽

Ceramic Composites ◽

Reactive Sintering ◽

Different Temperatures ◽

Carbide Matrix

The effect of sintering temperature in the interval from 1775 to 1850?C on the density, microstructure, hardness and fracture toughness of ceramic composites consisting of a boron carbide matrix and titanium diboride secondary phase was studied. The composites were hot pressed using in situ reaction between boron carbide and 40 wt.% of titanium dioxide additive. The samples were hot pressed at different temperatures but for the constant time of 60min, under the pressure of 35MPa in vacuum of 10 Pa. Both Vickers hardness and fracture toughness of the composites increased with the sintering temperature.Maximal hardness of 29.8GPa and fracture toughness of 6.9MPa?m1/2 were achieved for the composite with 29.6 vol.% of titanium diboride secondary phase sintered at the highest sintering temperature of 1850?C.

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Self-healing Behavior of 2D C/SiC Modified by Partial Boron Carbide Matrix after Annealing at Low Temperature in Wet Oxygen

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2010.01199 ◽

2010 ◽

Vol 25 (11) ◽

pp. 1199-1203 ◽

Cited By ~ 1

Author(s):

Si-Wei LI ◽

Li-Tong ZHANG ◽

Yong-Sheng LIU ◽

Lai-Fei CHENG ◽

Zu-De FENG ◽

...

Keyword(s):

Low Temperature ◽

Boron Carbide ◽

Self Healing ◽

Carbide Matrix

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Low Temperature Synthesis of Carbide Thin Films by Pulsed Laser Deposition (PLD)

MRS Proceedings ◽

10.1557/proc-235-873 ◽

1991 ◽

Vol 235 ◽

Cited By ~ 7

Author(s):

M. S. Donley ◽

J. S. Zabinski ◽

W. J. Sessler ◽

V. J. Dyhouse ◽

S. D. Walck ◽

...

Keyword(s):

Thin Films ◽

Boron Carbide ◽

Pulsed Laser Deposition ◽

Room Temperature ◽

Pulsed Laser ◽

Sem Analysis ◽

Laser Deposition ◽

Binder Phase ◽

Fine Grained ◽

Boron Carbide B4c

ABSTRACTThin films of titanium carbide (TiC) and boron carbide (B4C) were grown by excimer pulsed laser deposition (PLD) at room temperature (RT) and 300°C. Films were deposited using the output of an excimer laser operating with KrF gas (γ = 248 nm, 15 ns pulse duration) to ablate hot-pressed targets. Film chemistry, morphology, and crystallinity were investigated. Stoichiometric, crystalline TiC films were grown on 440C stainless steel and NaCl substrates at room temperature and at 300°C. The films grown on NaCl were nanocrystalline, cubic TiC, with a grain size ranging between 2 and 10 nm in diameter. Boron carbide films were grown on silicon {100} substrates at room temperature and at 300°C. Film chemistry and stoichiometry duplicated that of the B4C target, which contained B4C and a mixed C-B-O-N binder phase. SEM analysis indicated that the morphology of the films was uniform, non-porous, and fine-grained. The films exhibited good adhesion and wear resistance, based on friction and wear data collected with a ball-on-disc tribometer.

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