Characterization of chemical bonding features and defect state density in HfSiOx Ny/SiO2 gate stack

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2386-2389 ◽  
Author(s):  
A. Ohta ◽  
Y. Munetaka ◽  
A. Tsugou ◽  
K. Makihara ◽  
H. Murakami ◽  
...  
2021 ◽  
Vol 11 (8) ◽  
pp. 3540
Author(s):  
Numfor Linda Bih ◽  
Assia Aboubakar Mahamat ◽  
Jechonias Bidossèssi Hounkpè ◽  
Peter Azikiwe Onwualu ◽  
Emmanuel E. Boakye

The quantity of polymer waste in our communities is increasing significantly. It is therefore necessary to consider reuse or recycling waste to avoid an increase in the risk to public health. This project is aimed at using pulverized low-density polyethylene (LDPE) waste as a source to reinforce and improve compressive strength, and to reduce the water absorption of geopolymer ceramics (GC). Clay:LDPE composition consisting of 5%, 10%, and 15% LDPE was geopolymerized with an NaOH/Na2SiO3 solution and cured at 30 °C and 50 °C. Characterization of the geopolymer samples was carried out using XRF and XRD. The microstructure was analyzed by SEM and chemical bonding by FTIR. The SEM micrographs showed LDPE particle pull-out on the geopolymer ceramics’ fracture surface. The result showed that the compressive strength increases with the addition of pulverized polymer waste compared to the controlled without LDPE addition. Water absorption decreased with an increase in LDPE addition in the geopolymer ceramics composite.


2008 ◽  
Vol 92 (2) ◽  
pp. 022904 ◽  
Author(s):  
Y. C. Ong ◽  
D. S. Ang ◽  
K. L. Pey ◽  
Z. R. Wang ◽  
S. J. O’Shea ◽  
...  

2014 ◽  
Vol 778-780 ◽  
pp. 631-634 ◽  
Author(s):  
Yoshiyuki Akahane ◽  
Takuo Kano ◽  
Kyosuke Kimura ◽  
Hiroki Komatsu ◽  
Yukimune Watanabe ◽  
...  

A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property.


Author(s):  
Monica Namizie Asey ◽  
Norhaizan Mohd Esa ◽  
Che Azurahanim Che Abdullah

Coating of iron oxide nanoparticles (MNP) is the common approach to reduce the effects of direct toxicity due to the ion oxidation that lead to the damage of DNA. This study investigates the effect of different concentration of Chitosan (Cs) used to coat the magnetic nanoparticle with variation in the crystallite size, chemical bonding, changes in weight and surface morphology. From the XRD results, it shows that the sample 1MNP-1Cs has optimum size of 13.42 ± 0.01 nm. From the FTIR analysis, it is revealed that there are three types of chemical bonding that occur in the MNP-Cs composites which are stretching vibrations of C-H, N–H vibration belonging to Cs and the Fe-O bonds from the MNP. From the FESEM analysis, it is found that the MNP-Cs composites have a wellshaped with spherical in form, as well as, smooth surfaces. As for TGA, the thermal decomposition of MNP nanocomposites was based on the amount of Cs and MNP used to produce the nanocomposites. Further studies will be conducted to find the optimum ratio of MNP-Cs for anticancer drug delivery application.


2021 ◽  
Vol 119 (14) ◽  
pp. 142901
Author(s):  
Amy C. Brummer ◽  
Amar T. Mohabir ◽  
Daniel Aziz ◽  
Michael A. Filler ◽  
Eric M. Vogel

2021 ◽  
Vol 314 ◽  
pp. 95-98
Author(s):  
Tomoki Hirano ◽  
Kenya Nishio ◽  
Takashi Fukatani ◽  
Suguru Saito ◽  
Yoshiya Hagimoto ◽  
...  

In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, nanoscale etching of InGaAs with no impact on the surface condition is possible with this method.


2004 ◽  
Vol 13 (01) ◽  
pp. 113-127 ◽  
Author(s):  
SERGEY S. SARKISOV ◽  
ELENA I. RADOVANOVA ◽  
BURL H. PETERSON ◽  
ALEX LEYDERMAN ◽  
MICHAEL CURLEY ◽  
...  

Characterization of the infrared absorption spectrum of the solutions of fullerene C 60 with 2-cyclooctylamino-5-nitropyridine additive has been performed with the focus on possible bonding with the amino-group of the additive. No occurrence of such bonding was found at normal conditions. Also no change of optical absorption in visible region and optical limiting of fullerene due to chemical bonding with the additive was detected. The resulting optical properties of the mixture were simply a sum of the properties of the components for a molar proportion of the additive to fullerene approaching 200:1.


1994 ◽  
Vol 336 ◽  
Author(s):  
Jingya Hou ◽  
Jianping Xi ◽  
Frank Kampas ◽  
Sanghoon Bae ◽  
S. J. Fonash

ABSTRACTThis paper analyzes the charge transport in “tunnel junctions” of amorphous Si Material based multijunction solar cells and proposes some guidelines for making good “tunnel junctions” based on the analysis. The Mechanism of the current flow in these “tunnel” junctions is recombination. However, the recombination mechanism is not the usual localized recombination but is non-localized recombination. The energy analysis shows that the usual localized recombination will cause a large energy loss and result in much lower energy conversion efficiency and Voc than the experimentally measured values. In non-local recombination, opposite charge carriers located at different locations can recombine by tunneling into a defect state. Based on this Mechanism, a good “tunnel junction” should be thin, with a large defect state density in the middle region of the “tunnel junction”. Broad tail states material and a thin layer small band gap material in tunnel junctions may improve the non-local recombination by providing more intermediate states for charge to tunnel through.


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