Fabrication of microchannel and diaphragm for a MEMS acoustic sensor using wet etching technique

2022 ◽  
Vol 253 ◽  
pp. 111670
Author(s):  
Washim Reza Ali ◽  
Mahanth Prasad
2012 ◽  
Vol 548 ◽  
pp. 254-257 ◽  
Author(s):  
Yan He ◽  
Bai Ling Huang ◽  
Yong Lai Zhang ◽  
Li Gang Niu

In this paper, a simple and facile technique for manufacturing glass-based microfluidic chips was developed. Instead of using expensive dry etching technology, the standard UV lithography and wet chemical etching technique was used to fabricate microchannels on a K9 glass substrate. The fabrication process of microfluidic chip including vacuum evaporation, annealing, lithography, and BHF (HF-NH4F-H2O) wet etching were investigated. Through series experiments, we found that anneal was the critical factor for chip quality. As a representative example, a microfluidic channel with 20 m of depth, and 80 m of width was successfully prepared, and the channel surfaces are quite smooth. These results present a simple, low cost, flexible and easy way to fabricate glass-based microfluidic chips.


2012 ◽  
Vol 41 (5) ◽  
pp. 899-904 ◽  
Author(s):  
Seungyong Jung ◽  
Gela Kipshidze ◽  
Rui Liang ◽  
Sergey Suchalkin ◽  
Leon Shterengas ◽  
...  

2015 ◽  
Vol 645-646 ◽  
pp. 163-168
Author(s):  
Rui Lei ◽  
Wei Guo Liu ◽  
Chang Long Cai ◽  
Shun Zhou ◽  
Jing Nie ◽  
...  

Polyimide is often used as a sacrificial layer material to make floating structure. Polyimide is also divided into photosensitive and non-photosensitive type; photosensitive polyimide currently has more negative photoresist and poor performance in many ways. Compared with photosensitive polyimide, the non-photosensitive type has low stress, stable performance and other advantages, so non-photosensitive polyimide has been chosen as a sacrificial layer material. To achieve the graphical function and release sacrificial layer, A deeply research was made in this dissertation makes on wet etching and dry etching. By controlling the wet etching process of prebake condition, exposure and developing time, and oxygen dry etching process of etching power, bias voltage and other key process parameters, a good sacrificial layer graph and etching effect have been got. Finally, it can be concluded that when the prebake conditions for 105°C, 8min and times of exposure and developing were 11s and 29s, the non-photosensitive polyimide wet etching effect is the best; when the etching power is 1000w, an oxygen flux rate is 50sccm, the reaction pressure is 30mTorr, the bias voltage is 140v, oxygen dry etching has a good effect.


2014 ◽  
Vol 31 (2) ◽  
pp. 104-107 ◽  
Author(s):  
Qazi Humayun ◽  
Muhammad Kashif ◽  
Uda Hashim

Purpose – The purpose of this study was to investigate the performance of a single-bridge ZnO nanorod as a photodetector. Design/methodology/approach – The fabrication of the design sensor with ∼6-μm gap Schottky contacts and bridging of the ZnO nanorod were based on conventional photolithography and wet-etching technique. Prior to bridging, the ZnO nanorods were grown by the hydrothermal process. The 0.35 M seed solution was prepared by dissolving zinc acetate dihydrate in 2-methoxyethanol, and monoethanolamine, which acts as a stabilizer, was added drop-wise. Before starting the solution deposition, and oxide, titanium (Ti) and gold (Au) layer deposition, p-type (100) silicon substrate was cleaned with Radio Corporation of America (RCA1) and RCA2, followed by dipping in diluted hydrofluoric acid. The aged solution was dropped onto the surface of the Au microgap structure, using a spin coater at a spinning speed of 3,000 rpm for 45 seconds, and then dried at 300°C for 15 minutes, followed by annealing at 400°C for 1 hour. The hydrothermal growth was carried out in an aqueous solution of zinc nitrate hexahydrate (0.025 M) and hexamethyltetramine (0.025 M). Findings – In this study, ZnO nanorods were grown on a SiO2 substrate by the hydrothermal method. Microgap electrodes with ∼6-μm spacing were achieved by using the wet-etching process. After the growth process, an area-selective mask was utilized to reduce the number of rods between the nearby gap areas. The obtained single ZnO nanorod was tested for the UV-sensing application. The single ZnO nanorod photodetector exhibited a UV photoresponse, thereby indicating potential as a cost-effective UV detector. The response and recovery times of the fabricated device were 65 and 95 seconds, respectively. Structural analysis was captured using X-ray Diffraction (XRD), whereas surface morphology was determined using scanning electron microscopy. Originality/value – This paper demonstrates the effect of UV photon on a single-bridge ZnO nanorod between microgap electrodes.


1992 ◽  
Vol 61 (3) ◽  
pp. 300-302 ◽  
Author(s):  
I‐Hsing Tan ◽  
Richard Mirin ◽  
Vijay Jayaraman ◽  
Song Shi ◽  
Evelyn Hu ◽  
...  

2016 ◽  
Vol 23 (02) ◽  
pp. 1550106 ◽  
Author(s):  
R. PERUMAL ◽  
Z. HASSAN

Nanoporous gallium nitride (GaN) has many potential applications in light-emitting diodes (LEDs), photovoltaics, templates and chemical sensors. This article reports the porosification of GaN through UV enhanced metal-assisted electroless photochemical wet etching technique using three different acid-based etchants and platinum served as catalyst for porosification. The etching process was conducted at room temperature for a duration of 90[Formula: see text]min. The morphological, structural, spectral and optical features of the developed porous GaN were studied with appropriate characterization techniques and the obtained results were presented. Field emission scanning electron micrographs exhibited the porosity nature along with excellent porous network of the etched samples. Structural studies confirmed the mono crystalline quality of the porous nanostructures. Raman spectral analyzes inferred the presenting phonon modes such as E2 (TO) and A1 (LO) in fabricated nanoporous structures. The resulted porous nanostructures hold the substantially enhanced photoluminescence intensity compared with the pristine GaN epitaxial film that is interesting and desirable for several advances in the applications of Nano-optoelectronic devices.


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