Bond wire lift-off monitoring based on intersection point movement characteristic in IGBT module

2021 ◽  
pp. 105202
Author(s):  
Mingxing Du ◽  
Jinlei Xin ◽  
Hongbin Wang ◽  
Ziwei Ouyang ◽  
Kexin Wei
Keyword(s):  
Intersection Point ◽  
Igbt Module ◽  
Movement Characteristic ◽  
Bond Wire ◽  
Lift Off

Analytical modeling of thermo-mechanical stress for bond wire of IGBT module

2021 ◽  
Vol 127 ◽  
pp. 114401
Author(s):  
Xingyu Dai ◽  
Xin Yang ◽  
Xinlong Wu ◽  
Chunming Tu ◽  
Guoyou Liu
Keyword(s):  
Mechanical Stress ◽  
Analytical Modeling ◽  
Igbt Module ◽  
Bond Wire

scholarly journals An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3962 ◽  
Author(s):  
Zilang Hu ◽  
Xinglai Ge ◽  
Dong Xie ◽  
Yichi Zhang ◽  
Bo Yao ◽  
...  
Keyword(s):  
Evaluation Method ◽  
Junction Temperature ◽  
Normal Operation ◽  
Monitoring Method ◽  
Bonding Wire ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Bond Wire ◽  
Artificial Neural Network Ann ◽  
Multivariate Monitoring

The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the IGBT module. A quantitative analysis of aging degree was first performed, and the results of multivariate and univariate monitoring were compared. Based on the relationship between the monitoring parameters and the aging of the IGBT bonding wire, gradual damage of the IGBT bond wire was implemented to simulate aging failure and obtain the aging data. Moreover, the change of junction temperature was considered to regulate monitoring parameters. Then, the aging degree was evaluated by an artificial neural network (ANN) algorithm. The experimental results showed the effectiveness of the proposed method.

Investigation of the Temperature Character of IGBT Failure Mode Based the 3-D Thermal-Electro Coupling FEM

2013 ◽  
Vol 655-657 ◽  
pp. 1576-1580 ◽  
Author(s):  
Pu Zhen He ◽  
Li Bing Zheng ◽  
Hua Chao Fang ◽  
Chun Lei Wang ◽  
Jun Hua
Keyword(s):  
Finite Elements ◽  
Boundary Conditions ◽  
Failure Mode ◽  
Failure Modes ◽  
Structure Design ◽  
Thermal Coupling ◽  
Finite Elements Modeling ◽  
Igbt Module ◽  
Lift Off ◽  
Influence Degree

Al wire bonding lift-off and solder delamination are the main failure modes of IGBT module. When the severity of the failure mode is different, the temperature character of IGBT is also different. This paper presents a methodology based on 3D electro-thermal coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature, and compares the influence degree of two kinds of failure modes to the performance of IGBT module. The results suggest the bonding lift-off has more influence than the solder delamination on the same load and boundary conditions. This method and the corresponding results help to evaluate these failure modes how they influence the performance of IGBT, determine the failure, establish the failure standards and find the optimization of structure design.

Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off

2013 ◽  
Vol 53 (2) ◽  
pp. 282-287 ◽  
Author(s):  
Luowei Zhou ◽  
Shengqi Zhou ◽  
Mingwei Xu
Keyword(s):  
Gate Voltage ◽  
Igbt Module ◽  
Bond Wires ◽  
Lift Off

scholarly journals A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1791 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Gerard Hurley
Keyword(s):  
Thermal Parameter ◽  
Junction Temperature ◽  
Collector Current ◽  
Insulated Gate Bipolar Transistor ◽  
Dependent Part ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Bond Wire ◽  
Separation Strategy

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

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