scholarly journals An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3962 ◽  
Author(s):  
Zilang Hu ◽  
Xinglai Ge ◽  
Dong Xie ◽  
Yichi Zhang ◽  
Bo Yao ◽  
...  
Keyword(s):  
Evaluation Method ◽  
Junction Temperature ◽  
Normal Operation ◽  
Monitoring Method ◽  
Bonding Wire ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Bond Wire ◽  
Artificial Neural Network Ann ◽  
Multivariate Monitoring

The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the IGBT module. A quantitative analysis of aging degree was first performed, and the results of multivariate and univariate monitoring were compared. Based on the relationship between the monitoring parameters and the aging of the IGBT bonding wire, gradual damage of the IGBT bond wire was implemented to simulate aging failure and obtain the aging data. Moreover, the change of junction temperature was considered to regulate monitoring parameters. Then, the aging degree was evaluated by an artificial neural network (ANN) algorithm. The experimental results showed the effectiveness of the proposed method.

scholarly journals An Anti-Interference Online Monitoring Method for IGBT Bond Wire Aging

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1449
Author(s):  
Chuankun Wang ◽  
Yigang He ◽  
Yunfeng Jiang ◽  
Lie Li
Keyword(s):  
Online Monitoring ◽  
Junction Temperature ◽  
Collector Current ◽  
Monitoring Method ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Three Phase ◽  
Bond Wires ◽  
Bond Wire ◽  
Three Phase Inverter

Due to the constant changes of the environment and load, the insulated-gate bipolar transistor (IGBT) module is subjected to a large amount of junction temperature (Tj) fluctuations, which often leads to damage to the bond wires. The monitoring parameters of IGBTs are often coupled with Tj, which increases the difficulty of monitoring IGBTs’ health status online. In this paper, based on the collector current (Ic) and collector-emitter on-state voltage (Vce_on) online monitoring circuit, an online monitoring method of IGBT bond wire aging against interference is proposed. First, the bond wire aging model is established, and the Vce_on is selected as the monitoring parameter. Secondly, taking a three-phase inverter circuit as an example, the Vce_on and Ic waveforms of the IGBT module are monitored in real time, and the process of online monitoring is introduced accordingly. Finally, the experimental results indicate that the method proposed in this paper can accurately identify the aging state of IGBT bond wires under different conditions.

scholarly journals A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1791 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Gerard Hurley
Keyword(s):  
Thermal Parameter ◽  
Junction Temperature ◽  
Collector Current ◽  
Insulated Gate Bipolar Transistor ◽  
Dependent Part ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Bond Wire ◽  
Separation Strategy

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

scholarly journals Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1559
Author(s):  
Chenyuan Wang ◽  
Yigang He ◽  
Chuankun Wang ◽  
Lie Li ◽  
Xiaoxin Wu
Keyword(s):  
Power Converters ◽  
Characteristic Curve ◽  
High Sensitivity ◽  
Critical Issue ◽  
Module Structure ◽  
Monitoring Method ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Bond Wire ◽  
Failure Monitoring

The Insulated Gate Bipolar Transistor (IGBT) is the component with the highest failure rate in power converters, and its reliability is a critical issue in power electronics. IGBT module failure is largely caused by solder layer fatigue or bond wires fall-off. This paper proposes a multi-chip IGBT module failure monitoring method based on the module transconductance, which can accurately monitor IGBT module chip failures and bond wire failures. The paper first introduces the failure mechanism and module structure of the multi-chip IGBT module; then, it proposes a reliability model based on the module transconductance and analyzes the relationship between chip failure, bond wire failure, and the transmission characteristic curve of the IGBT module. Finally, the module transconductance under chip failure and bond wire failure is measured and calculated through simulation, and the temperature is calibrated, which can eliminate the influence of temperature on health monitoring. The results show that the method has a high sensitivity to chip failures and bond wire failures, can realize the failure monitoring of multi-chip IGBT modules, and is of great significance for improving the reliability of power converters.

scholarly journals An Improved Electro-Thermal Model to Estimate the Junction Temperature of IGBT Module

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1066 ◽  
Author(s):  
Zhen Hu ◽  
Wenfeng Zhang ◽  
Juai Wu
Keyword(s):  
Thermal Model ◽  
Junction Temperature ◽  
Good Time ◽  
Model Parameters ◽  
Step Process ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Solder Fatigue ◽  
Update Process ◽  
Key Parameter

Junction temperature is a key parameter that influences both the performance and the reliability of the insulated gate bipolar transistor (IGBT) module, while solder fatigue has a significant effect on the accuracy of junction temperature estimates using the electro-thermal model. In this paper, an improved electro-thermal model, which is independent of solder fatigue, is proposed to accurately estimate the junction temperature of IGBT module. Firstly, solder fatigue conditions are monitored in real time with the information of the case temperatures. Secondly, when solder fatigue is found, the update process of the electro-thermal model parameters is performed to match the model parameters with the fatigue device. With the above two-step process, the influence of solder fatigue on the accuracy of temperature estimates can be removed in good time. Experimental results are provided to validate the effectiveness of the proposed method.

scholarly journals Electro-Thermal Modeling of Power IGBT Module Cooled by A Heat Pipe Cooling System

2021 ◽  
Vol 86 (1) ◽  
pp. 105-122
Author(s):  
Améni Driss ◽  
Samah Maalej ◽  
Mohamed Chaker Zaghdoudi
Keyword(s):  
Heat Pipe ◽  
Thermal Model ◽  
Cooling System ◽  
Junction Temperature ◽  
Electrical Parameters ◽  
Safe Operation ◽  
Insulated Gate Bipolar Transistor ◽  
Thermal Capacitance ◽  
Igbt Module ◽  
Model Predictions

This paper deals with the development of an electro-thermal model of an Insulated Gate Bipolar Transistor (IGBT) with a water-cooled heat pipe cooling system. Firstly, a thermal model of the heat pipe cooling system is proposed. Then, an electro-thermal model of the IGBT is developed to predict the junction temperature variations in transient operation. The thermal model of the IGBT is determined on the base of the thermal-capacitance lumped method. The electrical model of the IGBT is developed by considering the effect of the junction temperature on its static electrical parameters. Finally, the electro-thermal model is considered in a boost converter application. The model predictions show the effectiveness of the heat pipe cooling system for different commutation frequencies. It is proved that the heat pipe cooling system can keep the junction temperature of the IGBT at values allowing safe operation.

scholarly journals Design and Analysis of the IGBT Heat Dissipation Structure Based on Computational Continuum Mechanics

Entropy ◽  
2020 ◽  
Vol 22 (8) ◽  
pp. 816
Author(s):  
Xin Lin ◽  
Huawei Wu ◽  
Zhen Liu ◽  
Baosheng Ying ◽  
Congjin Ye ◽  
...  
Keyword(s):  
Temperature Field ◽  
Vector Field ◽  
Heat Dissipation ◽  
The Other ◽  
Junction Temperature ◽  
Insulated Gate Bipolar Transistor ◽  
Wind Speeds ◽  
Igbt Module ◽  
Dissipation Structure ◽  
Fin Thickness

With the trend of high integration and high power of insulated gate bipolar transistor (IGBT) components, strict requirements have been placed on the heat dissipation capabilities of the IGBT devices. On the basis of traditional rectangular fins, this paper developed two new types of heat-dissipating fins to meet the high requirements of heat dissipation for the IGBT devices. One is the rectangular radiator with a groove length of 2.5 mm and a width of 0.85 mm, the other is the arc radiator with the angle of 125 arc angle, 0.8 mm arc height, and 1.4 mm circle radius. After theoretically calculating the IGBT junction temperature, numerical simulations have been implemented to verify the theoretical result. The commercial CFD software, STAR-CCM+, was employed to simulate the heat dissipation characteristics of the IGBT module under different wind speeds, power, and fin structures. By analyzing the temperature field and vector field of the IGBT module, the analysis results demonstrate that the error between the simulation result and the theoretical calculation is within 5%, which proves the feasibility of the newly designed heat-dissipating fins. When the wind speed is 12.5 m/s, the power is 110 W, the fin height is 31.2 mm, and the fin thickness is 2.3 mm, the rectangular radiator can achieve the best heat dissipation performance.

scholarly journals A Fusion Algorithm for Online Reliability Evaluation of Microgrid Inverter IGBT

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1294 ◽  
Author(s):  
Chuankun Wang ◽  
Yigang He ◽  
Chenyuan Wang ◽  
Xiaoxin Wu ◽  
Lie Li
Keyword(s):  
Aging Process ◽  
Short Term Memory ◽  
Coupling Model ◽  
Reliability Evaluation ◽  
Junction Temperature ◽  
Stable Operation ◽  
Practical Case ◽  
Fusion Algorithm ◽  
Insulated Gate Bipolar Transistor ◽  
Damage Degree

Due to the diversity of distributed generation sources, microgrid inverters work under complex and changeable conditions. The core device of inverters, an insulated gate bipolar transistor (IGBT), bears a large amount of thermal stress impact, so its reliability is related to the stable operation of the microgrid. The effect of the IGBT aging process cannot be considered adequately with the existing reliability evaluation methods, which have not yet reached the requirements of online evaluation. This paper proposes a fusion algorithm for online reliability evaluation of microgrid inverter IGBT, which combines condition monitoring and reliability evaluation. Firstly, based on the microgrid inverter topology and IGBT characteristics, an electrothermal coupling model is established to obtain junction temperature data. Secondly, the segmented long short-term memory (LSTM) algorithm is studied, which can accurately predict the aging process of the IGBT and judge the aging state via the limited monitoring data. Then, the parameters of the electrothermal coupling model are corrected according to the aging process. Besides, the fusion algorithm is applied to the practical case. Finally, the data comparison verifies the feasibility of the fusion algorithm, whose cumulative damage degree and estimated life error are 5.10% and 5.83%, respectively.

scholarly journals Effect of load sequence interaction on bond-wire lifetime due to power cycling

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zoubir Khatir ◽  
Son-Ha Tran ◽  
Ali Ibrahim ◽  
Richard Lallemand ◽  
Nicolas Degrenne
Keyword(s):  
High Stress ◽  
Bipolar Transistors ◽  
Junction Temperature ◽  
Experimental Investigations ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wire ◽  
Load Sequence ◽  
The Difference ◽  
Heating Duration

AbstractExperimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ($$\Delta T_{j}$$ Δ T j ) and the heating duration ($$t_{ON}$$ t ON ) are investigated. First, power cycling tests with single conditions (in $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON ), are performed in order to serve as test references. Then, combined power cycling tests with two-level stress conditions have been done sequentially. These tests are carried-out in the two sequences: low stress/high stress (LH) and high stress/low stress (HL) for both $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON . The tests conducted show that a sequencing in $$\Delta T_{j}$$ Δ T j regardless of the direction “high-low” or “low–high” leads to an acceleration of degradations and so, to shorter lifetimes. This is more pronounced when the difference between the stress levels is large. With regard to the heating duration ($$t_{ON}$$ t ON ), the effect seems insignificant. However, it is necessary to confirm the effect of this last parameter by additional tests.

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