Microstructural control of a SSZ-13 zeolite film via rapid thermal processing

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

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A self-aligned cobalt silicide technology using rapid thermal processing

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583458 ◽

1986 ◽

Vol 4 (6) ◽

pp. 1358 ◽

Cited By ~ 92

Author(s):

L. Van den hove

Keyword(s):

Thermal Processing ◽

Rapid Thermal Processing ◽

Cobalt Silicide

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Some results from CuGaSe 2 solar cells prepared by rapid thermal processing

Thin Solid Films ◽

10.1016/s0040-6090(99)00864-0 ◽

2000 ◽

Vol 361-362 ◽

pp. 454-457 ◽

Cited By ~ 3

Author(s):

O. Schenker ◽

M. Klenk ◽

E. Bucher

Keyword(s):

Solar Cells ◽

Thermal Processing ◽

Rapid Thermal Processing

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Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

MRS Proceedings ◽

10.1557/proc-745-n4.8 ◽

2002 ◽

Vol 745 ◽

Cited By ~ 2

Author(s):

Erik Haralson ◽

Tobias Jarmar ◽

Johan Seger ◽

Henry H. Radamson ◽

Shi-Li Zhang ◽

...

Keyword(s):

Thin Film ◽

Thermal Processing ◽

Rapid Thermal Processing ◽

Lateral Diffusion ◽

Lateral Growth ◽

Silicide Formation ◽

Diffusion Couples ◽

Planar Configuration ◽

20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

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Deep-submicrometer CMOS technology with reoxidized or annealed nitrided-oxide gate dielectrics prepared by rapid thermal processing

IEEE Transactions on Electron Devices ◽

10.1109/16.108220 ◽

1992 ◽

Vol 39 (1) ◽

pp. 118-126 ◽

Cited By ~ 25

Author(s):

T. Hori ◽

S. Akamatsu ◽

Y. Odake

Keyword(s):

Thermal Processing ◽

Gate Dielectrics ◽

Rapid Thermal Processing ◽

Cmos Technology ◽

Deep Submicrometer

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Epitaxial Silicon Layers Made by Reduced Pressure/Temperature CVD

MRS Proceedings ◽

10.1557/proc-129-609 ◽

1988 ◽

Vol 129 ◽

Author(s):

J.L. Regolini ◽

D. Bensahel ◽

J. Mercier ◽

C. D'Anterroches ◽

A. Perio

Keyword(s):

Thermal Processing ◽

Atmospheric Pressure ◽

Rapid Thermal Processing ◽

Processing System ◽

Epitaxial Silicon ◽

Reduced Pressure ◽

Selective Epitaxial Growth ◽

Main Decomposition ◽

Rate Limiting ◽

Reactive Gas

ABSTRACTIn a rapid thermal processing system working at a total pressure of a few Torr, we have obtained selective epitaxial growth of silicon at temperatures as low as 650°C. When using SiH2Cl2 (DCS) as the reactive gas, no addition of HCl is needed. Nevertheless, using SiH4 below 950°C a small amount of HCl should be added.Some kinetic aspects of the two systems, DCS/HCI/H2 and SiH4/HCl/H2, are presented and discussed. For the DCS system, we show that the rate-limiting reactions are slightly different from those commonly accepted in the literature, where the results are from systems working at atmospheric pressure or in the 20-100 Torr range.Our model is based on the main decomposition of DCS, SiH2Cl→SiHCl + HCl, instead of the widely accepted reaction SiH2Cl2→SiCl2 + H2. This is the main reason why no extra HCl is required in the DCS/H2 system to obtain full selectivity from above 1000°C down to 650°C.

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