Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Zn Diffusion ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Zn Concentration ◽  
The Difference ◽  
Doped Oxide

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps

2010 ◽  
Vol 645-648 ◽  
pp. 817-820 ◽  
Author(s):  
Aurore Constant ◽  
Nicolas Camara ◽  
Phillippe Godignon ◽  
Maxime Berthou ◽  
Jean Camassel ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Oxidation Process ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Sio2 Films ◽  
Conventional Furnace ◽  
The One ◽  
Better Than

Rapid Thermal Processing (RTP) has been evaluated as an alternative to conventional furnace technique for oxidation of 4H- and 3C-SiC. We show that the growth of the SiO2 films in a RTP chamber is orders of magnitude faster than in a conventional furnace. As well as being fast, this process leads to oxide films with quality comparable or even better than the one grown in classical furnaces. Studying different gas for oxidizing and annealing ambient, we demonstrate that SiO2/SiC interface is significantly improved when using N2O instead of O2 or even N2-O2 dilution.

Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

1986 ◽  
Vol 71 ◽  
Author(s):  
Tom Sedgwick
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Attractive Potential ◽  
High Activation ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects ◽  
Junction Formation ◽  
Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

Oxide Growth Using the Water-Wall Arc Lamp

1985 ◽  
Vol 52 ◽  
Author(s):  
Jeffrey C. Gelpey ◽  
Paul O. Stump ◽  
Ronald A. Capodilupo
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Processing System ◽  
Measurement Tool ◽  
Oxide Growth ◽  
Water Wall ◽  
Different Temperatures ◽  
Indirect Technique ◽  
Direct Feedback

ABSTRACTThe uses of Rapid Thermal Annealing or Rapid Thermal Processing (RTP) have been expanding beyond the original post implant annealing. RTP has been used to reflow low temperature oxides (PSG or BPSG), anneal silicides and to sinter contacts. One application of RTP which is beginning to receive attention is the growth of oxides or nitrides of silicon.This paper will examine the use of a commercial rapid thermal processing system based on a very high power water-wall DC arc lamp to grow oxides on silicon wafers. The work includes a study of the growth rates of oxides at different temperatures. Direct feedback control of wafer temperature and high ramp-up and cool-down rates are used to minimize the effects of temperature errors or “tails” in the temperature/time profiles. Ellipsometry is used as the primary measurement tool to characterize the oxide films.In addition to using a pure, dry oxygen atmosphere, several oxygen-argon mixtures are used. The effects of atmosphere on the growth rate of the oxide film are reported.In order to become a practical application of RTP, oxide growth must be accomplished uniformly and reproducibly. These characteristics are machine-dependent. The uniformity of films grown in this system are discussed. The growth of oxide films and the uniformity measurements are used as an indirect technique to characterize the uniformity of the system. The reproducibility of film thickness is also examined.

Diffusion Modeling of the Redistribution of Ion Implanted Impurities

1985 ◽  
Vol 52 ◽  
Author(s):  
Alwin E. Michel
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
Diffusion Modeling ◽  
Enhanced Diffusion ◽  
The Common ◽  
Diffusion Mechanisms ◽  
Silicon Device ◽  
Temperature Furnace ◽  
Ion Implanted

ABSTRACTTransient enhanced diffusion during rapid thermal processing has been reported for most of the common dopants employed for silicon device fabrication. For arsenic a large amount of the available data is fit by a computational model based on accepted diffusion mechanisms. Ion implanted boron on the other hand exhibits anomalous tails and transient motiou. A time dependence of this displacement is demonstrated at lower temperatures. High temperature rapid anneals are shown to reduce some of the anomalous motion observed for low temperature furnace anneals. A model is described that links the electrical activation with the diffusion and describes both the transient diffusion of rapid thermal processing and the large anomalous diffusion reported many years ago for furnace anneals.

Effects of Rapid Thermal Processing on SiO2/GaAs Interfaces

1988 ◽  
Vol 126 ◽  
Author(s):  
Yutaka Tokuda ◽  
Masayuki Katayama ◽  
Nobuo Ando ◽  
Akio Kitagawa ◽  
Akira Usami ◽  
...  
Keyword(s):  
Outer Surface ◽  
Photoelectron Spectroscopy ◽  
Thermal Processing ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Rf Sputtering ◽  
Electron Traps ◽  
Conventional Furnace ◽  
Pile Up ◽  
Transient Spectroscopy

ABSTRACTEffects of rapid thermal processing (RTP) on SiO2/GaAs interfaces have been investigated with Auger electron spectroscopy and X-ray photoelectron spectroscopy. SiO2 films of 100, 175, 200 and 1250 nm thickness have been deposited on liquid encapsulated Czochralski-grown (100) n-type GaAs wafers by the RF sputtering method. RTP has been performed at 800°C for 6 s. For comparison, conventional furnace processing (CFP) has also been performed at 800°C for 20 min for 200-nm-thick SiO2/GaAs. The Ga is observed on the outer SiO2 surface for RTP samples as well as CFP samples. This indicates that the outdiffusion of Ga occurs after only 6 s at 800°C even through 1250-nm-thick SiO2 films. The depth profile of Ga reveals the pile-up of Ga on the outer SiO2 surface for both RTP and CFP samples. The amount of Ga on the outer surface gradually increases in the thickness range 1250 to 175 nm. The As is also observed on the outer surface. The amount of Ga and As on the outer surface rapidly increases at 100 nm thickness. Electron traps in RTP samples have been studied with deep-level transient spectroscopy. Different electron traps are produced in GaAs by RTP between 100-nm- and 200-nm-thick SiO2/GaAs. It is thought that the production of different traps by RTP is related to the amount of Ga and As loss through SiO2 films from GaAs.

Single-Wafer Hot Wall Rapid Thermal Processing for Thin Gate Oxide Films

2002 ◽  
Vol 5 (5) ◽  
pp. F11 ◽  
Author(s):  
Yoshihide Senzaki ◽  
Marci Schaefer ◽  
Joseph Sisson ◽  
Carl Barelli ◽  
Jeff Bailey ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Gate Oxide ◽  
Thin Gate Oxide

Difference between Wafer Temperature and Thermocouple Reading during rapid Thermal Processing

1998 ◽  
Vol 525 ◽  
Author(s):  
T. Borca-Tasciuc ◽  
D. A. Achimov ◽  
G. Chen
Keyword(s):  
Temperature Measurement ◽  
Thermophysical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Simple Analytical Model ◽  
Calibration Standard ◽  
Wafer Temperature ◽  
Thermocouple Reading ◽  
The Difference ◽  
Thermocouple Temperature

ABSTRACTThermocouples are often used as a calibration standard for rapid thermal processing. Although it has been recognized that the thermocouple temperature can be different from the wafer temperature, the magnitude of the temperature difference is difficult to quantify. In this work, we present a simple analytical model to demonstrate the difference between the thermocouple temperature and the true wafer temperature. The results show that a large difference can exist between the thermocouple and the wafer temperature. This is because the optical and thermophysical properties of the thermocouple and the glue material are different from those of the wafer. The model results show that temperature measurement becomes more accurate if fine diameter thermocouple wires with very low emissivity are used.

scholarly journals Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
B. Wickman ◽  
A. Bastos Fanta ◽  
A. Burrows ◽  
A. Hellman ◽  
J. B. Wagner ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Solar Energy ◽  
Energy Conversion ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Solar Energy Conversion ◽  
Iron Oxide Films

ALCHEMI studies on the location of zinc in GaAs

1989 ◽  
Vol 47 ◽  
pp. 584-585
Author(s):  
K. K. Christenson ◽  
J.A. Eades
Keyword(s):  
Diffusion Coefficient ◽  
Potential Energy ◽  
Diffusion Process ◽  
Energy Barrier ◽  
Diffusion Rate ◽  
Nearest Neighbors ◽  
High Symmetry ◽  
Layer Structures ◽  
Zn Concentration ◽  
The Difference

The diffusion of Zn in GaAs is anomalous in that the diffusion coefficient D is proportional to the Zn concentration squared. Further, the diffusion rate of the column III species in III-V layer structures (ie. Ga and Al in GaAs-GaAlAs) can be increased by 105 with the addition of doping levels of Zn3. The column V sites are not affected. As an aid to understanding the diffusion process we have located the position of the Zn in the GaAs lattice.There are four high symmetry positions in the zincblende structure that the Zn could occupy: Ga, As, T (Tetrahedral interstitial, located at 1/2 1/2 1/2 with four nearest neighbors at 0.433 a0) and H (Hexagonal interstitial, located at 5/8 5/8 5/8 with six nearest neighbors at 0.415 a0). Interstitial diffusion involves hopping between alternating T and H sites with the energy barrier to diffusion being equivalent to the difference in the potential energy of the two sites. Figure 1 indicates the possible low-index orientations for ALCHEMI studies which can differentiate between these sites.

Sign in / Sign up

Export Citation Format

Share Document