Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors

2009 ◽  
Vol 49 (1) ◽  
pp. 13-16 ◽  
Author(s):  
H. Wong ◽  
Y. Fu ◽  
J.J. Liou ◽  
Y. Yue
Keyword(s):  
Mos Transistors ◽  
Hot Carrier

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

2018 ◽  
Vol 33 (12) ◽  
pp. 125019
Author(s):  
Yen-Lin Tsai ◽  
Jone F Chen ◽  
Shang-Feng Shen ◽  
Hao-Tang Hsu ◽  
Chia-Yu Kao ◽  
...  
Keyword(s):  
High Voltage ◽  
Drift Region ◽  
Mos Transistors ◽  
Hot Carrier

Current-accelerated channel hot carrier stress of MOS transistors

1998 ◽  
Vol 34 (2) ◽  
pp. 217 ◽  
Author(s):  
Chih-Tang Sah ◽  
A. Neugroschel ◽  
K.M. Han
Keyword(s):  
Mos Transistors ◽  
Hot Carrier ◽  
Hot Carrier Stress

Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxide

1990 ◽  
Vol 37 (3) ◽  
pp. 708-717 ◽  
Author(s):  
M. Bourcerie ◽  
B.S. Doyle ◽  
J.-C. Marchetaux ◽  
J.-C. Soret ◽  
A. Boudou
Keyword(s):  
Gate Oxide ◽  
Interfacial Region ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Oxide Traps

Reliability Effects on MOS Transistors Due to Hot-Carrier Injection

1985 ◽  
Vol 20 (1) ◽  
pp. 306-313 ◽  
Author(s):  
Kueing-Long Chen ◽  
S.A. Saller ◽  
I.A. Groves ◽  
D.B. Scott
Keyword(s):  
Carrier Injection ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Hot Carrier Injection
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