Monte Carlo simulation of hot-carrier degradation in scaled MOS transistors for VLSI technology

2002 ◽  
Author(s):  
A. Ghetti ◽  
J. Bude ◽  
C.T. Liu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Vlsi Technology ◽  
Hot Carrier Degradation

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Monte Carlo simulation of hot carrier transport in III-N LEDs

2015 ◽  
Vol 14 (2) ◽  
pp. 382-397 ◽  
Author(s):  
Pyry Kivisaari ◽  
Jani Oksanen ◽  
Jukka Tulkki ◽  
Toufik Sadi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Hot Carrier

Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: a comparison study

2001 ◽  
Vol 48 (4) ◽  
pp. 813-815
Author(s):  
Zhi Chen ◽  
Kangguo Cheng ◽  
Jinju Lee ◽  
J.W. Lyding ◽  
K. Hess ◽  
...  
Keyword(s):  
Isotope Effect ◽  
Comparison Study ◽  
Mos Transistors ◽  
Deuterium Isotope Effect ◽  
Hot Carrier ◽  
Hot Carrier Degradation

scholarly journals Monte Carlo simulation of hot-carrier phenomena in open quantum devices: A kinetic approach

2004 ◽  
Vol 84 (1) ◽  
pp. 139-141 ◽  
Author(s):  
Remo Proietti Zaccaria ◽  
Rita Claudia Iotti ◽  
Fausto Rossi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Kinetic Approach ◽  
Quantum Devices ◽  
Hot Carrier ◽  
Open Quantum

Monte Carlo Simulation of Boundary Scattering Effects for Power MOSFET Performance

2003 ◽  
Author(s):  
A. Marathe ◽  
D. G. Walker
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Hot Carriers ◽  
Power Mosfets ◽  
Hot Carrier ◽  
Microelectronic Devices ◽  
Interface Scattering ◽  
Scattering Effects ◽  
Hot Carrier Effects

Miniaturization of microelectronic devices has lead to many new issues not seen in larger structures, such as hot carrier effects and interfacial effects. In power MOSFETs, degradation of the transconductance can occur over the lifetime of a device. This decrease in performance is a result of hot carriers in the channel region scattering at a Si/SiO2 interface that has been passivated with hydrogen. Eventually hot carriers liberate the hydrogen, leaving silicon bonds with an entirely different scattering cross section. The current work presents a Monte Carlo simulation of carrier transport in silicon near an interface. Scattering parameters at the interface are parameterized and studied. It was found that electron mobility, which is proportional to transconductance, is a function of the energy loss rate and type of scattering at the interface. Results indicate that dangling bonds and H-Si bonds can be characterized by different scattering mechanisms.

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