Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications
2012 ◽
Vol 52
(1)
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pp. 107-111
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2012 ◽
Vol 258
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pp. 8366-8370
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2016 ◽
Vol 59
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pp. 30-36
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2016 ◽
Vol 15
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pp. 657-665
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