A transport model describing how defect accumulation leads to intrinsic dielectric breakdown and post-breakdown conduction

2022 ◽  
Vol 128 ◽  
pp. 114459
Author(s):  
Yueming Xu ◽  
Toh-Ming Lu ◽  
Joel L. Plawsky
Keyword(s):  
Dielectric Breakdown ◽  
Transport Model ◽  
Defect Accumulation

Charge transport model to predict dielectric breakdown as a function of voltage, temperature, and thickness

2018 ◽  
Vol 91 ◽  
pp. 232-242
Author(s):  
Sean P. Ogden ◽  
Yueming Xu ◽  
Kong Boon Yeap ◽  
Tian Shen ◽  
Toh-Ming Lu ◽  
...  
Keyword(s):  
Charge Transport ◽  
Dielectric Breakdown ◽  
Transport Model

Effects of Electrical Discharges in Low Pressure Gases on the Morphology of Polyethylene Crystals

1974 ◽  
Vol 32 ◽  
pp. 544-545
Author(s):  
L.H. Bolz ◽  
D.H. Reneker
Keyword(s):  
Power Distribution ◽  
Electrical Discharge ◽  
Dielectric Breakdown ◽  
Ionic Species ◽  
Low Pressure ◽  
Polymer Surfaces ◽  
Electrical Discharges ◽  
Adhesive Bonds ◽  
Power Distribution Lines ◽  
Modification Of The Surface

The attack, on the surface of a polymer, by the atomic, molecular and ionic species that are created in a low pressure electrical discharge in a gas is interesting because: 1) significant interior morphological features may be revealed, 2) dielectric breakdown of polymeric insulation on high voltage power distribution lines involves the attack on the polymer of such species created in a corona discharge, 3) adhesive bonds formed between polymer surfaces subjected to such SDecies are much stronger than bonds between untreated surfaces, 4) the chemical modification of the surface creates a reactive surface to which a thin layer of another polymer may be bonded by glow discharge polymerization.

Dielectric Breakdown Properties of Poly-Lactic Acid with Spherulites Growth

2014 ◽  
Vol 134 (4) ◽  
pp. 237-242
Author(s):  
Naru Matsugasaki ◽  
Katsuyoshi Shinyama ◽  
Shigetaka Fujita
Keyword(s):  
Lactic Acid ◽  
Dielectric Breakdown ◽  
Poly Lactic Acid

Dielectric Breakdown of Transformer Insulation Materials Under Cryogenic and Room Temperatures

2008 ◽  
Author(s):  
Horatio Rodrigo ◽  
Wolfgang Baumgartinger ◽  
Aniket Ingrole ◽  
Z (Richard) Liang ◽  
Danny George. Crook ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Insulation Materials ◽  
Transformer Insulation

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

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